Fairchild QSE256, QSE257, QSE258, QSE259 service manual

tm

QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor

January 2011

QSE256, QSE257, QSE258, QSE259
Plastic Silicon OPTOLOGIC

®

Photosensor

Features

■

Bipolar silicon IC
Package type: Sidelooker

■

■

Medium wide reception angle, 50°
Package material and color: black epoxy

■

■

Daylight filter
High sensitivity

■

■

Direct TTL/LSTTL interface

Package Dimensions

4.35

5.85

2.15

2.35

1.14

1.40

ø

1.39

1.65

0.67

0.77

Description

The QSE25x family are OPTOLOGIC® ICs which
feature a Schmitt trigger at output which provides hyster­esis for noise immunity and pulse shaping. The basic
building block of this IC consists of a photodiode, a linear
amplifier, voltage regulator, Schmitt trigger and four out­put options. The TTL/LSTTL compatible output can drive
up to ten TTL loads over supply currents from 4.5 to 16.0
Volts. The devices are marked with a color stripe for
easy identification.

5° TYP ON ALL SIDES

12.7
MIN

Part Number Definitions Color Code

QSE256 Totem-Pole, buffer output Red

QSE257 Totem-Pole, inverter output Yellow

1.17

1.37

GND

1.45

1.71

2.34

2.74

Vout

4.38

4.62

Vcc

0.25

0.51

0.52

0.76

Note:

1. Dimensions for all drawings are in millimeters.

©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.0

QSE258 Open-collector, buffer output Green

QSE259 Open-collector, inverter output Blue

Input/Output Table

Part Number Light Output

QSE256 On HIGH

Off LOW

QSE257 On LOW

Off HIGH

QSE258 On HIGH

Off LOW

QSE259 On LOW

Off HIGH

Block Diagrams

QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor

REGULATOR

LA

VOLTAGE

REGULATOR

Open-Collector Output Buffer

VOLTAGE

QSE256

Totem-Pole Outp

LA

QSE258

ut Buffer

V

CC

V

OUT

GND

V

CC

V

OUT

GND

VOLTAGE

REGULATOR

LA

V

CC

V

OUT

GND

QSE257

Totem-Pole Output Inverter

VOLTAGE

REGULATOR

LA

V

CC

V

OUT

GND

QSE259

Open-Collector Output Inverter

(T

Absolute Maximum Ratings

= 25°C unless otherwise specified)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol Parameter Rating Unit

T

OPR

T

STG

T

SOL-I

T

SOL-F

I

O

V

CC

V

O

P

D

Notes:

1. Derate power dissipation linearly 2.50mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron tip 1/16" (1.6mm) minimum from housing.

Operating Temperature -40 to +85 °C

Storage Temperature -40 to +100 °C

Soldering Temperature (Iron)

Soldering Temperature (Flow)

(2,3,4)

(2,3)

240 for 5 sec °C

260 for 10 sec °C

Output Current 50 mA

Supply Voltage 4.0 to 16 V

Output Voltage 35 V

Power Dissipation

(1)

100 mW

©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.0 2

5. λ

(T

Electrical Characteristics

= -40°C to +85°C, V

A

= 4.5V to 5.5V)

CC

Symbol Parameter Test Conditions Min. Typ. Max. Units

Ee(+) Positive Going Threshold

Irradiance

(5)

Ee(+)/Ee(-) Hysteresis Ratio 1.10 2.00

I

CC

Supply Current

(5)

Peak to Peak Ripple which
will Cause False Triggering

QSE256 (Buffer Totem Pole)

V

OH

V

OL

High Level Output Voltage

Low Level Output Voltage Ee = 0, I

QSE257 (Inverter Totem Pole)

V

OH

V

OL

High Level Output Voltage Ee = 0, I

Low Level Output Voltage

QSE258 (Buffer Open Collector)

I

OH

V

OL

High Level Output Current

Low Level Output Voltage Ee = 0, I

QSE259 (Inverter Open Collector)

I

OH

V

OL

High Level Output Current Ee = 0, V

Low Level Output Voltage

QSE256, QSE257

t

t

PHL

, t

R

, t

Output Rise, Fall Times Ee = 0 or 0.3mW/cm

F

Propagation Delay 6.0 µS

PLH

QSE258, QSE259

t

t

PHL

, t

R

, t

Output Rise, Fall Times Ee = 0 or 0.3mW/cm

F

Propagation Delay 6.0 µS

PLH

Note:

= 880nm (AlGaAs).

T

= 25°C 0.025 0.250 mW/cm

A

Ee = 0 or 0.3mW/cm

2

f = DC to 50MHz 2.00 V

(5)

Ee = 0.3mW/cm

OL

(5)

Ee = 0.3mW/cm

(5)

Ee = 0.3mW/cm

(5)

Ee = 0.3mW/cm

OH

OL

f = 10kHz, DC = 50%,
R

= 360 Ω

L

f = 10kHz, DC = 50%,
R

= 360 Ω

L

2

, I

= -10mA 2.4 V

OH

= 16mA 0.40 V

= -10mA 2.4 V

2

, I

= 16mA 0.40 V

OL

2

, V

= 30V 100 µA

OH

= 16mA 0.40 V

= 30V 100 µA

OH

2

, I

= 16mA 0.40 V

OL

2

,

(5)

2

,

(5)

5.0 mA

70 nS

100 nS

QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC® Photosensor

2

©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSE256, QSE257, QSE258, QSE259 Rev. 1.0.0 3