Fairchild QSE1103 service manual
QSE1103 Plastic Silicon Photosensor
August 2006
QSE1103
Plastic Silicon Photosensor
Features
■
Bipolar silicon IC
Package type: Sidelooker
■
■
Medium wide reception angle, 50°
■
Package material and color: black epoxy
Daylight filter
■
■
High sensitivity
Package Dimensions
ø1.65
4.39
2.17
2.27
5.03
5.13
2.54
3.56
ø2.41
4.49
3.76
3.86
12.7
MIN
Description
The QSE1103 is a detector IC which features a
photodiode, an amplifier, and an open collector output
stage.
2.49
2.59
0.32
NOM
GND VccVout
Notes:
1. Dimensions for all drawings are in millimeters.
©2006 Fairchild Semiconductor Corporation
QSE1103 Rev. 1.0.0
1.9 NOM 2X
0.51 SQ. NOM
0.63
0.89
1
Schematic
Vcc (3)
V
(4)
out
GND (5)
www.fairchildsemi.com
QSE1103 Plastic Silicon Photosensor
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Symbol Parameter Rating Unit
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
O
V
CC
V
O
P
D
Electrical/Optical Characteristics
Operating Temperature -40 to +85 °C
Storage Temperature -40 to +100 °C
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2,3,4)
(2,3)
240 for 5 sec °C
260 for 10 sec °C
Output Current 50 mA
Supply Voltage 4.5 to 5.5 V
Output Voltage 7 V
Power Dissipation
(1)
(T
=25°C unless otherwise specified)
A
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
E
I
OH
V
I
CCH
I
CCL
Threshold Irradiance
e
High Level Output Current V
Low Level Output Voltage I
OL
High Level Supply Current V
Low Level Supply Current V
t
Output Rise Time (10–90%) R
r
Output Fall Time (90–10%) R
t
f
(5)
= 5.5V, V
CC
= 13mA, V
OL
E
= 1.0mW/cm
e
= 5.5V, E
CC
= 5.5V, E
CC
= 350 Ω , C
L
= 350 Ω , C
L
8 mW/cm
= 5.5V, E
OH
= 5.5V,
CC
2(5)
= 0 15 mA
e
= 1.0mW/cm
e
= 15pF 25 ns
L
= 15pF 20 ns
L
= 0 2 µA
e
0.6 V
2(5)
18 mA
2
Notes:
1. Derate power dissipation linearly 2.50mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
5.λ = 880nm (AlGaAs).
QSE1103 Rev. 1.0.0
2
www.fairchildsemi.com
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