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QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
April 2007
QSC112, QSC113, QSC114
Plastic Silicon Infrared Phototransistor
Features
■
Tight production distribution
Steel lead frames for improved reliability in solder
■
mounting
■
Good optical-to-mechanical alignment
Plastic package is infrared transparent black to
■
attenuate visible light
■
Can be used with QECXXX LED
Black plastic body allows easy recognition from LED
■
PACKAGE DIMENSIONS
Package Dimensions
0.116 (2.95)
REFERENCE
SURFACE
0.052 (1.32)
0.032 (0.082)
0.193 (4.90)
0.030 (0.76)
NOM
Description
The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package.
0.800 (20.3)
MIN
0.050 (1.27)
0.018 (0.46)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.10 (.25) on all non-nominal dimensions
unless otherwise specified.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2
EMITTER
0.100 (2.54)
NOM
0.155 (3.94)
Schematic
COLLECTOR
EMITTER
Θ
5. λ
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Symbol Parameter Rating Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CE
V
EC
P
D
Notes:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2,3,4)
(2,3)
240 for 5 sec °C
260 for 10 sec °C
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage 5 V
Power Dissipation
(1)
100 mW
QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
(T
Electrical/Optical Characteristics
=25°C)
A
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
I
CEO
BV
BV
I
C(ON)
V
CE(sat)
Note:
= 880 nm, AlGaAs.
PS
CEO
ECO
t
r
t
f
Peak Sensitivity Wavelength 880 nm
Reception Angle ±4 °
Collector-Emitter Dark Current V
Collector-Emitter Breakdown I
Emitter-Collector Breakdown I
On-State Collector Current QSC112 Ee = 0.5 mW/cm
= 10 V, Ee = 0 100 nA
CE
= 1 mA 30 V
C
= 100 µA 5 V
E
2
, V
CE
= 5 V
(5)
14mA
On-State Collector Current QSC113 2.40 9.60
On-State Collector Current QSC114 4.00
Saturation Voltage Ee = 0.5 mW/cm
Rise Time V
= 5 V, R
CC
= 100 Ω , I
L
2
, I
C
= 0.5 mA
(5)
= 2 mA 5.0 µs
C
0.4 V
Fall Time 5.0
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2 2
Typical Performance Curves
QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
2
10
1
10
- Light Current (mA)
0
10
C(ON)
I
-1
10
0.1 1
Figure 1. Light Current vs. Radiant Intensity
VCE = 5V
GaAs Light Source
Ee - Radiant Intensity (mW/cm2)
Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage
1
10
0
10
-1
10
- Dark Current (nA)
CEO
-2
I
10
-3
10
051015 20 25 30
V
- Collector-Emitter Voltage (V)
CE
Figure 2. Angular Response Curve
90°
80°
120°
110°
100°
130°
140°
150°
160°
170°
180°
1.0
0.4
0.6
0.8
1
10
0.0
0.0 0.2 0.4 0.6 0.8 1.0
0.2
Ie = 1mW/cm
Ie = 0.5mW/cm
0
10
Ie = 0.2mW/cm
Ie = 0.1mW/cm
ed Light Current
-1
10
- Normaliz
L
I
-2
10
0.1 1 10
V
- Collector-Emitter Voltage (V)
CE
70°
2
60°
2
2
2
50°
40°
30°
Normalized to:
= 5V
V
CE
Ie = 0.5mW/cm
TA= 25oC
20°
10°
0°
2
Figure 5. Dark Current vs. Ambient Temperature
4
10
Normalized to:
= 25V
V
CE
3
T
= 25oC
10
A
2
10
1
10
- Normalized Dark Current
0
10
CEO
I
-1
10
25 50 75 100
- Ambient Temperature (
T
A
VCE= 25V
o
C
)
= 10V
V
CE
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2 3
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QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary This datasheet contains preliminary data; supplementary data will be
First Production
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete Not In Production This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I26
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2 4
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