Fairchild QSC112, QSC113, QSC114 service manual
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QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
April 2007
QSC112, QSC113, QSC114
Plastic Silicon Infrared Phototransistor
Features
■
Tight production distribution
Steel lead frames for improved reliability in solder
■
mounting
■
Good optical-to-mechanical alignment
Plastic package is infrared transparent black to
■
attenuate visible light
■
Can be used with QECXXX LED
Black plastic body allows easy recognition from LED
■
PACKAGE DIMENSIONS
Package Dimensions
0.116 (2.95)
REFERENCE
SURFACE
0.052 (1.32)
0.032 (0.082)
0.193 (4.90)
0.030 (0.76)
NOM
Description
The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package.
0.800 (20.3)
MIN
0.050 (1.27)
0.018 (0.46)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.10 (.25) on all non-nominal dimensions
unless otherwise specified.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2
EMITTER
0.100 (2.54)
NOM
0.155 (3.94)
Schematic
COLLECTOR
EMITTER
Θ
5. λ
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Symbol Parameter Rating Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CE
V
EC
P
D
Notes:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2,3,4)
(2,3)
240 for 5 sec °C
260 for 10 sec °C
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage 5 V
Power Dissipation
(1)
100 mW
QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
(T
Electrical/Optical Characteristics
=25°C)
A
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
I
CEO
BV
BV
I
C(ON)
V
CE(sat)
Note:
= 880 nm, AlGaAs.
PS
CEO
ECO
t
r
t
f
Peak Sensitivity Wavelength 880 nm
Reception Angle ±4 °
Collector-Emitter Dark Current V
Collector-Emitter Breakdown I
Emitter-Collector Breakdown I
On-State Collector Current QSC112 Ee = 0.5 mW/cm
= 10 V, Ee = 0 100 nA
CE
= 1 mA 30 V
C
= 100 µA 5 V
E
2
, V
CE
= 5 V
(5)
14mA
On-State Collector Current QSC113 2.40 9.60
On-State Collector Current QSC114 4.00
Saturation Voltage Ee = 0.5 mW/cm
Rise Time V
= 5 V, R
CC
= 100 Ω , I
L
2
, I
C
= 0.5 mA
(5)
= 2 mA 5.0 µs
C
0.4 V
Fall Time 5.0
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2 2
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