Fairchild QSB363 service manual
QSB363 Subminiature Plastic Silicon Infrared Phototransistor
August 2011
QSB363
Subminiature Plastic Silicon Infrared Phototransistor
Features
■
NPN Silicon Phototransistor
T-3/4 (2mm) Surface Mount Package
■
■
Medium Wide Beam Angle, 24°
Black Plastic Package
■
■
Matched Emitters: QEB363 or QEB373
Daylight Filter
■
■
Tape & Reel Option (See Tape & Reel Specifications)
■
Lead Form Options: Gullwing, Yoke, Z-Bend
Package Dimensions
0.276 (7.0)
MIN
0.024 (0.6)
0.016 (0.4)
0.074 (1.9)
.118 (3.0)
.102 (2.6)
.059 (1.5)
.051 (1.3)
Description
The QSB363 is a silicon phototransistor encapsulated in
a black infrared transparent T-3/4 package.
EMITTER
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
SCHEMATIC
COLLECTOR
0.055 (1.4)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.024 (0.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363 Rev. 1.0.5
Θ
λ
λ
(T
Absolute Maximum Ratings
= 25°C unless otherwise specified)
A
Parameter Symbol Rating Unit
Operating Temperature T
Storage Temperature T
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2, 3)
(2,3)
Collector Emitter Voltage V
Emitter Collector Voltage V
Power Dissipation
(1)
Notes:
1. Derate power dissipation linearly 1.08 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
T
T
OPR
STG
SOL
SOL
CEO
ECO
P
C
QSB363 Subminiature Plastic Silicon Infrared Phototransistor
-40 to +85 °C
-40 to +85 °C
260 °C
260 °C
30 V
5V
75 mW
Electrical/Optical Characteristics
Parameters Test Conditions Symbol Min. Typ. Max Units
Peak Sensitivity Wavelength
Reception Angle
Collector Dark Current V
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
On-State Collector Current V
Collector-Emitter Saturation
Voltage
Rise Time
Fall Time
= 20V, Ee = 0mW/cm
CE
= 100 µA, Ee = 0mW/cm
I
C
I
= 100 µA, Ee = 0mW/cm
E
Ee = 1 mW/cm
= 940nm GaAs
I
Ee = 1 mW/cm
= 940nm GaAs
V
I
R
(T
=25°C)
A
= 5V
CE
= 2 mA
C
= 5 V,
CE
= 1 mA
C
= 1000 Ω
L
λ
P
– 940 – nm
– ±12 –
2
2
2
2
2
I
CEO
BV
BV
I
C(on)
V
CE (SAT)
CEO
ECO
t
r
t
f
––100 nA
30 – – V
5––V
1.0 1.5 – mA
––0.4 V
–
–
15
15
–
–
µs
µs
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363 Rev. 1.0.5 2
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