Fairchild QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR service manual

QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR — Surface Mount Silicon Pin Photodiode
August 2008
Features
Daylight Filter (QSB34GR and QSB34ZR only) Surface Mount Packages:
– QSB34GR/QSB34CGR for overmount board – QSB34ZR/QSB34CZR for undermount board
Fast PIN Photodiode
Wide Reception Angle, 120°
Large Chip Size = 3mm x 3mm Sensitive Area - 2.55mm x 2.55mm
High Sensitivity Low Capacitance
Available in 0.470" (12mm) width tape on 7" (178mm) diameter reel; 1,000 units per reel
Package Dimensions, QSB34GR
4.50
4.30
0.175
6.70
6.10
0.10 Min
Anode
0.90
0.70
1.50
Package
Center
Photosensitive surface
0.17
0.13
0–5°
0.80
0.70
Chip
1.70
1.50
Chip Center
1.20
4.00
3.80
4.00
3.80
Schematic
ANODE
CATHODE
Notes:
1.Dimensions for all drawings are in mm.
2.Tolerance of ±.0.13 on all non-nominal dimensions unless otherwise specified.
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR Rev. 1.0.3
Θ
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR — Surface Mount Silicon Pin Photodiode
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Unit
T
OPR
T
STG
T
SOL
V
R
P
C
Note:
1. Soldering time ≤ 5 seconds
Electrical/Optical Characteristics
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings.
Operating Temperature -25 to +85 °C
Storage Temperature -40 to +85 °C
Soldering Temperature 260 °C
Reverse Voltage 32 V
Power Dissipation at (or below) 25°C
150 mW
Free Air Temperature
(T
=25°C unless otherwise specified)
A
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
I
R(D)
λ
I
λ
Reverse Voltage I
R
Dark Reverse Current V
Peak Sensitivity V
PK
= 0.1mA 32 V
R
= 10V 30 nA
R
= 5V 940 nm
R
Reception Angle @ 1/2 Power ±60 °
Photo Current Ee = 1.0mW/cm
PH
C Capacitance V
Rise Time V
t
r
t
Fall Time V
f
2
, V
CE
= 3V 25 pF
R
= 10V, R
R
= 10V, R
R
= 50
L
= 50
L
= 5V
(4)
25 37 µA
50 ns
50 ns
Spectral Sensitivity QSB34GR, QSB34ZR
0.5
QSB34CGR, QSB34CZR
730 400
1100 1100
nm
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR Rev. 1.0.3 2
Loading...
+ 4 hidden pages