Fairchild QRE1113, QRE1113GR service manual
QRE1113, QRE1113GR — Minature Reflective Object Sensor
August 2011
QRE1113, QRE1113GR
Minature Reflective Object Sensor
Features
■
Phototransistor output
No contact surface sensing
■
■
Miniature package
Lead form style: Gull Wing
■
■
Tw o leadform options: Through hole (QRE1113)
SMT gullwing (QRE1113GR)
■
Tw o packaging options: Tube (QRE1113)
Tape and reel (QRE1113GR)
QRE1113GR Package Dimensions
2.90
2.50
1.00
4
C
L
1.80
C
L
1 2
30°
0.40
1.70
1.50
0.60
0.40
3
0.94
3.60
3.20
0.94
0.61 Nom.
(4x)
4.80
4.40
Notes:
1. Dimensions for all drawings are in millimeters.
2. Tolerance of ±0.15mm on all non-nominal dimensions
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
QRE1113, QRE1113GR Rev. 1.7.0
1.10
0.90
QRE1113 Package Dimensions
QRE1113, QRE1113GR — Minature Reflective Object Sensor
1.70
1.50
1.80
2.90
2.50
1.00
4
C
L
C
L
1 2
4.20
3.80
0.40
0.60
0.40
3
0.94
3.60
3.20
0.94
10.4
8.4
0~20° 0~20°
Notes:
1. Dimensions for all drawings are in millimeters.
2. Tolerance of ±0.15mm on all non-nominal dimensions
Schematic
1
Pin 1: Anode
Pin 2: Cathode
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
QRE1113, QRE1113GR Rev. 1.7.0 2
234
Pin 3: Collector
Pin 4: Emitter
(T
Absolute Maximum Ratings
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Units
T
T
EMITTER
SENSOR
T
OPR
T
STG
SOL-I
SOL-F
I
F
V
I
FP
P
V
CEO
V
ECO
I
C
P
R
D
D
Operating Temperature -40 to +85 °C
Storage Temperature -40 to +90 °C
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2,3,4)
(2,3)
240 for 5 sec °C
260 for 10 sec °C
Continuous Forward Current 50 mA
Reverse Voltage 5 V
(1)
(5)
1A
75 mW
Peak Forward Current
Power Dissipation
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage 5 V
Collector Current 20 mA
Power Dissipation
(1)
50 mW
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Electrical/Optical Characteristics
(T
= 25°C unless otherwise specified)
A
Symbol Parameter Test Conditions Min. Typ. Max. Units
INPUT DIODE
V
I
R
λ
PE
OUTPUT TRANSISTOR
I
D
COUPLED
I
C(ON)
I
CX
V
CE (SAT)
t
t
Notes:
1. Derate power dissipation linearly 1.00mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) from housing.
5. Pulse conditions: tp = 100µs; T = 10ms.
6. Measured using an aluminum alloy mirror at d = 1mm.
7. No reflective surface at close proximity.
Forward Voltage I
F
Reverse Leakage Current V
Peak Emission Wavelength I
Collector-Emitter Dark Current I
On-State Collector Current I
Cross-Talk Collector Current I
= 20mA 1.2 1.6 V
F
= 5V 10 µA
R
= 20mA 940 nm
F
= 0mA, V
F
= 20mA, V
F
= 20mA, V
F
= 20V 100 nA
CE
(6)
CE
CE
= 5V
= 5V
(7)
0.10 0.40 mA
Saturation Voltage 0.3 V
Rise Time V
r
Fall Time 20
f
CC
R
L
= 5V, I
= 1k Ω
C(ON)
= 100µA,
20 µs
1µA
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
QRE1113, QRE1113GR Rev. 1.7.0 3
Loading...