Fairchild QRD1113, QRD1114 service manual
QRD1113, QRD1114 — Reflective Object Sensor
January 2008
QRD1113, QRD1114
Reflective Object Sensor
Features
■
Phototransistor Output
No contact surface sensing
■
■
Unfocused for sensing diffused surfaces
Compact Package
■
■
Daylight filter on sensor
PACKAGE DIMENSIONS
Package Dimensions
0.083 (2.
OPTICAL
CENTERLI
NE
0.120 (3.
0.183 (4.
11)
05)
65)
PIN 1
0.240 (6.
0.173 (4.39)
Description
The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon phototransistor
mounted side by side in a black plastic housing. The onaxis radiation of the emitter and the on-axis response of
the detector are both perpendicular to the face of the
QRD1113/14. The phototransistor responds to radiation
emitted from the diode only when a reflective object or
surface is in the field of view of the detector.
INDICATOR
10)
0.500 (12.7)
MIN
0.020 (0.51)
SQ. (4X)
2
1
0.083 (2.
11)
PIN 1 COLLECTOR
PIN 2 EMITTER PIN 4 CATHODE
Notes:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
3. Pins 2 and 4 typically .050" shorter than pins 1 and 3.
4. Dimensions controlled at housing surface.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QRD1113, QRD1114 Rev. 1.1.0
3
4
PIN 3
0.100 (2.
ANODE
54)
Schematic
23
14
QRD1113, QRD1114 — Reflective Object Sensor
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
EMITTER
I
F
V
R
P
D
SENSOR
V
CEO
V
ECO
P
D
Electrical/Optical Characteristics
Operating Temperature -40 to +85 °C
Storage Temperature -40 to +100 °C
Lead Temperature (Solder Iron)
Lead Temperature (Solder Flow)
(2,3)
(2,3)
240 for 5 sec °C
260 for 10 sec °C
Continuous Forward Current 50 mA
Reverse Voltage 5 V
Power Dissipation
(1)
100 mW
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage V
Power Dissipation
(1)
(T
A
= 25°C)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
INPUT (Emitter)
V
I
λ
OUTPUT (Sensor)
BV
BV
I
COUPLED
I
C(ON)
I
C(ON)
V
CE(SAT)
I
CX
Forward Voltage I
F
Reverse Leakage Current V
R
Peak Emission Wavelength I
PE
Collector-Emitter Breakdown I
CEO
Emitter-Collector Breakdown I
ECO
Dark Current V
D
QRD1113 Collector Current I
QRD1114 Collector Current I
Collector Emitter Saturation
= 20mA 1.7 V
F
= 5V 100 µA
R
= 20mA 940 nm
F
= 1mA 30 V
C
= 0.1mA 5 V
E
= 10 V, I
CE
= 20mA, V
F
= 20mA, V
F
I
= 40mA, I
F
= 0mA 100 nA
F
= 5V, D = .050"
CE
= 5V, D = .050"
CE
= 100µA, D = .050"
C
(6,8)
(6,8)
0.300 mA
1mA
(6,8)
Voltage
Cross Talk I
Rise Time V
t
r
t
Fall Time 50 µs
f
= 20mA, V
F
= 5V, R
CE
= 5V, E
CE
= 100 Ω , I
L
(7)
= 0
E
= 5mA 10 µs
C(ON)
.200 10 µA
0.4 V
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron tip 1/16” (1.6 mm) minimum from housing.
5. As long as leads are not under any stress or spring tension.
6. D is the distance from the sensor face to the reflective surface.
7. Crosstalk (I
8. Measured using Eastman Kodak neutral white test card with 90% diffused reflecting as a reflecting surface.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QRD1113, QRD1114 Rev. 1.1.0 2
) is the collector current measured with the indicated current on the input diode and with no reflective surface.
CK
Loading...