Fairchild QEE273 service manual
λ
QEE273 — Plastic Infrared Light Emitting Diode
October 2009
QEE273
Plastic Infrared Light Emitting Diode
Features
■
= 850nm
Package Type = Sidelooker
■
■
Chip Material = AlGaAs
Matched Photosensor: QSE213 and QSE243
■
■
Medium Wide Emission Angle, 30°
Package Material: Clear Epoxy
■
■
High Output Power
PACKAGE DIMENSIONS
Package Dimensions
0.174 (4.44)
0.047 (1.20)
0.224 (5.71)
0.177 (4.51)
Description
The QEE273 is an 850nm AlGaAs LED encapsulated in
a medium wide angle, thin plastic sidelooker package.
0.060 (1.50)
R 0.030 (0.76)
0.030 (0.76)
0.5 (12.7)
MIN
CATHODE
0.060 (1.52)
Schematic
0.020 (0.51)
SQ. (2X)
0.100 (2.54)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEE273 Rev. 1.0.0
ANODE
CATHODE
QEE273 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2,3,4)
(2,3)
240 for 5 sec °C
260 for 10 sec °C
Continuous Forward Current 50 mA
Reverse Voltage 5 V
Power Dissipation
(1)
(T
A
= 25°C)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
TC
2 Θ
V
TC
I
I
TC
C
Peak Emission Wavelength I
PE
Temperature Coefficient 0.2 nm
λ
1
/2 Emission Angle I
Forward Voltage I
F
Temperature Coefficient -1 mV
VF
Reverse Current V
R
Radiant Intensity I
E
Temperature Coefficient -0.33 %
IE
t
Rise Time I
r
Fall Time 12 ns
t
f
Junction Capacitance V
j
= 20mA 850 nm
F
= 100mA 30 °
F
= 100mA, tp = 20ms 1.8 V
F
= 5V 10 µA
R
= 100mA, tp = 20ms 18 27 36 mW/sr
F
= 100mA 11 ns
F
= 0V 22 pF
R
/
°C
/
°C
/
°C
©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEE273 Rev. 1.0.0 2
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