Fairchild QEE122, QEE123 service manual
λ
QEE122, QEE123 — Plastic Infrared Light Emitting Diode
September 2008
QEE122, QEE123
Plastic Infrared Light Emitting Diode
Features
■
= 880 nm
Package Type = Sidelooker
■
■
Chip Material = AlGaAs
■
Matched Photosensor: QSE113
Medium Wide Emission Angle, 50°
■
■
Package Material: Clear Epoxy
High Output Power
■
■
Orange stripe on the top side
PACKAGE DIMENSIONS
Package Dimensions
)
2
.2
(2
7
8
.0
0
)
7
.2
(1
0
5
.0
0
)
1
.4
(2
5
9
.0
0
Ø
Description
The QEE12X is a 880 nm AlGaAs LED encapsulated in
a medium wide angle, plastic sidelooker package.
)
4
.4
(4
5
7
.1
0
)
5
.6
(1
5
6
.0
0
Ø
)
8
.0
(5
0
0
.2
0
)
0
.7
2
(1
0
0
.5
0
IN
DE
O
H
T
A
C
M
E
D
O
N
A
Schematic
Q.
S
)
.51
(0
0
2
.0
0
)
6
.7
(0
30
.0
0
)
4
.5
(2
0
0
0.1
M
NO
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEE122, QEE123 Rev. 1.0.0
)
X
(2
ANODE
)
4
.5
(2
0
0
.1
0
CATHODE
QEE122, QEE123 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Notes:
1. Derate power dissipation linearly 2.67mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2)(3)(4)
(2)(3)
240 for 5 sec °C
260 for 10 sec °C
Continuous Forward Current 100 mA
Reverse Voltage 5 V
Power Dissipation
(1)
(T
= 25°C)
A
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
TC
2 Θ
TC
TC
λ
PE
V
I
I
t
t
C
Peak Emission Wavelength I
Temperature Coefficient 0.2 nm
λ
1
/2 Emission Angle I
Forward Voltage I
F
Temperature Coefficient -6 mV
VF
Reverse Current V
R
Radiant Intensity QEE122 I
E
= 20mA 890 nm
F
= 100mA 50 °
F
= 100mA, tp = 20ms 1.7 V
F
= 5V 10 µA
R
= 100mA, tp = 20ms 4 9 16 mW/sr
F
Radiant Intensity QEE123 8 9
Temperature Coefficient -0.3 %
IE
Rise Time I
r
Fall Time 800 ns
f
Junction Capacitance V
j
= 100mA 900 ns
F
= 0V 11 pF
R
/
°C
/
°C
/
°C
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEE122, QEE123 Rev. 1.0.0 2
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