Fairchild QEE113 service manual
QEE113 — Plastic Infrared Light Emitting Diode
August 2008
QEE113
Plastic Infrared Light Emitting Diode
Features
■
λ
= 940nm
Package Type = Sidelooker
■
■
Chip Material = GaAs
Matched Photosensor: QSE113
■
■
Medium Wide Emission Angle, 50°
Package Material: Clear Epoxy
■
■
High Output Power
■
Gray stripe on the top side
PACKAGE DIMENSIONS
Package Dimensions
0.087 (2.22)
0.050 (1.27)
Ø0.095 (2.41)
Description
The QEE113 is a 940nm GaAs LED encapsulated in a
medium wide angle, plastic sidelooker package.
0.175 (4.44)
Ø0.065 (1.65)
0.200 (5.08)
0.500 (12.70)
CATHODE
0.020 (0.51) SQ.
(2X)
0.100 (2.54)
0.030 (0.76)
0.100 (2.54)
NOM
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEE113 Rev. 1.0.1
MIN
ANODE
Schematic
ANODE
CATHODE
QEE113 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering T emperature (Iron)
Soldering T emperature (Flow)
(2,3,4)
(2,3)
240 for 5 sec °C
260 for 10 sec °C
Continuous Forward Current 50 mA
Reverse Voltage 5 V
Power Dissipation
(1)
(T
A
= 25°C)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
TC
2 Θ
V
TC
I
I
TC
C
Peak Emission Wavelength I
PE
Temperature Coefficient 0.3 nm
λ
1
/2 Emission Angle I
Forward Voltage I
F
Temperature Coefficient -2 mV
VF
Reverse Current V
R
Radiant Intensity I
E
Temperature Coefficient -0.7 %
IE
t
Rise Time I
r
Fall Time 800 ns
t
f
Junction Capacitance V
j
= 20mA 945 nm
F
= 100mA 50 °
F
= 100mA, tp = 20ms 1.5 V
F
= 5V 10 µA
R
= 100mA, tp = 20ms 3 7.5 12 mW/sr
F
= 100mA 800 ns
F
= 0V 14 pF
R
/
°C
/
°C
/
°C
©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEE113 Rev. 1.0.1 2
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