Fairchild QED222, QED223 service manual
λ
QED222, QED223 — Plastic Infrared Light Emitting Diode
July 2012
QED222, QED223
Plastic Infrared Light Emitting Diode
Features
■
= 880nm
Chip material = AlGaAs
■
■
Package type: T-1 3/4 (5mm lens diameter)
Matched photosensor: QSD123/QSD124
■
■
Medium wide emission angle, 30°
High output power
■
■
Package material and color: clear, purple tinted, plastic
PACKAGE DIMENSIONS
Package Dimensions
0.195 (4.95)
REFERENCE
SURFACE
0.800 (20.3)
MIN
0.305 (7.75)
0.040 (1.02)
NOM
Description
The QED222 and QED223 are 880nm AlGaAs LEDs
encapsulated in a clear purple tinted, plastic T-1 3/4
package.
CATHODE
0.050
(1.25)
0.020 (0.51)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED222, QED223 Rev. 1.0.2
0.100 (2.54)
NOM
0.240 (6.10)
0.215 (5.45)
Schematic
ANODE
CATHODE
QED222, QED223 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
I
F(Peak)
Notes:
1. Derate power dissipation linearly 2.67mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
5. Pulse conditions; tp = 100µs, T = 10ms.
Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2)(3)(4)
(2)(3)
240 for 5 sec °C
260 for 10 sec °C
Continuous Forward Current 100 mA
Reverse Voltage 5 V
Power Dissipation
Peak Forward Current
(1)
(5)
200 mW
1.5 A
Electrical / Optical Characteristics
(T
= 25°C)
A
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
TC
2 Θ
V
TC
I
I
TC
C
Peak Emission Wavelength I
PE
Temperature Coefficient 0.2 nm
λ
1
/2 Emission Angle I
Forward Voltage I
F
Temperature Coefficient -6 mV
VF
Reverse Current V
R
Radiant Intensity QED222 I
E
= 20mA 890nm
F
= 100mA 30 °
F
= 100mA, tp = 20ms 1.7 V
F
= 5V 10 µA
R
= 100mA, tp = 20ms 16 32 mW/sr
F
Radiant Intensity QED223 25
Temperature Coefficient -0.3 %
IE
t
Rise Time I
r
Fall Time 800 ns
t
f
Junction Capacitance V
j
= 100mA 900 ns
F
= 0V 11 pF
R
/
°C
/
°C
/
°C
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED222, QED223 Rev. 1.0.2 2
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