QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
August 2008
QED121, QED122, QED123
Plastic Infrared Light Emitting Diode
Features
■
λ
= 880nm
Chip material = AlGaAs
■
■
Package type: T-1 3/4 (5mm lens diameter)
Matched photosensor: QSD122/QSD123/QSD124
■
■
Narrow emission angle, 16°
High output power
■
■
Package material and color: clear, peach tinted, plastic
PACKAGE DIMENSIONS
Package Dimensions
0.195 (4.95)
REFERENCE
SURFACE
0.800 (20.3)
MIN
0.305 (7.75)
0.040 (1.02)
NOM
Description
The QED121, QED122 and QED123 are 880nm
AlGaAs LEDs encapsulated in a clear peach tinted,
plastic T-1 3/4 package.
CATHODE
0.050
(1.25)
0.020 (0.51)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1
0.100 (2.54)
NOM
0.240 (6.10)
0.215 (5.45)
Schematic
ANODE
CATHODE
QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Notes:
1. Derate power dissipation linearly 2.67mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering T emperature (Iron)
Soldering T emperature (Flow)
(2)(3)(4)
(2)(3)
240 for 5 sec °C
260 for 10 sec °C
Continuous Forward Current 100 mA
Reverse Voltage 5 V
Power Dissipation
(1)
(T
= 25°C)
A
200 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
TC
2 Θ
V
TC
I
I
I
I
TC
C
Peak Emission Wavelength I
PE
Temperature Coefficient 0.2 nm
λ
1
/2 Emission Angle I
Forward Voltage I
F
Temperature Coefficient -6 mV
VF
Reverse Current V
R
Radiant Intensity QED121 I
E
Radiant Intensity QED122 I
E
Radiant Intensity QED123 I
E
Temperature Coefficient -0.3 %
IE
t
Rise Time I
r
t
Fall Time 800 ns
f
Junction Capacitance V
j
= 20mA 890 nm
F
= 100mA 16 °
F
= 100mA, tp = 20ms 1.7 V
F
= 5V 10 µA
R
= 100mA, tp = 20ms 16 40 mW/sr
F
= 100mA, tp = 20ms 32 100 mW/sr
F
= 100mA, tp = 20ms 50 70 mW/sr
F
= 100mA 900 ns
F
= 0V 11 pF
R
/
°C
/
°C
/
°C
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1 2
QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
Figure 1. Normalized Intensity vs. Wavelength
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
NORMALIZED INTENSITY
0.2
0.1
0.0
700 750 800 850 900 950 1,000 1,050
λ (nm)
Figure 3. Normalized Radiant Intensity vs. Forward Current
10
Normalized to:
I
= 100mA Pulsed
F
t
= 20mS
PW
Duty Cycle = 4%
T
= 25°C
A
1
Figure 2. Peak Wavelength vs. Ambient Temperature
910
908
906
904
902
900
898
– PEAK EMISSION WAVELENGTH
896
PE
λ
894
010203040506070
TA – AMBIENT TEMPERTURE (°C)
= 20mA DC
I
F
80 90 100
Figure 4. Normalized Radient Intensity vs. Ambient Temperature
1.3
1.2
1.1
1.0
0.9
Normalized to:
I
= 20mA Pulsed
F
t
= 20mS
PW
Duty Cycle = 4%
T
= 25°C
A
– NORMALIZED RADIANT INTENSITY
e
I
0.1
IF – FORWARD CURRENT (mA)
Figure 5. Forward Voltage vs. Forward Current
5.0
Pulsed
I
F
t
= 20mS
PW
Duty Cycle = 4%
4.0
T
= 25°C
A
3.0
2.0
– FORWARD VOLTAGE (V)
F
1.0
V
0.0
IF – FORWARD CURRENT (mA)
10010 1000
10010 1000
0.8
0.7
– NORMALIZED RADIANT INTENSITY
e
I
0.6
-15 0 15 30 45 60 75 90
TA – AMBIENT TEMPERTURE (°C)
Figure 6. Forward Voltage vs. Ambient Temperature
2.1
2.0
1.9
1.8
1.7
– FORWARD VOLTAGE (V)
F
V
1.6
1.5
-15 0 15 30 45 60 75 90
TA – AMBIENT TEMPERTURE (°C)
IF = 20mA Pulsed
t
= 20mS
PW
Duty Cycle = 4%
105
105
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1 3
QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
Figure 7. Radiation Diagram
90°
80°
70°
0.00.20.40.60.81.0 0.2 0.4 0.6 0.8 1.0
170°
180°
160°
150°
140°
130°
120°
110°
100°
(Continued)
60°
50°
40°
30°
20°
Figure 8. Coupling Characteristics of QED12X and QSD12X
10°
1.0
0.8
0.6
0.4
0°
0.2
(ON) – NORMALIZED COLLECTOR CURRENT
0.0
C
I
0123456
IF = 20mA
= 100mA
I
F
LENS TIP SEPARATION (inches)
Normalized to:
d = 0 inch
Pulse Width = 100µs
Duty Cycle = 0.1%
V
= 5V
CC
R
= 100Ω
L
T
= 25°C
A
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1 4
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QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
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SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S W ORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary
No Identification Needed Ful
First Production
lProduction
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The
datasheet is for reference information only.
Rev. I36
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1 5
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