Fairchild QED121, QED122, QED123 service manual
QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
August 2008
QED121, QED122, QED123
Plastic Infrared Light Emitting Diode
Features
■
λ
= 880nm
Chip material = AlGaAs
■
■
Package type: T-1 3/4 (5mm lens diameter)
Matched photosensor: QSD122/QSD123/QSD124
■
■
Narrow emission angle, 16°
High output power
■
■
Package material and color: clear, peach tinted, plastic
PACKAGE DIMENSIONS
Package Dimensions
0.195 (4.95)
REFERENCE
SURFACE
0.800 (20.3)
MIN
0.305 (7.75)
0.040 (1.02)
NOM
Description
The QED121, QED122 and QED123 are 880nm
AlGaAs LEDs encapsulated in a clear peach tinted,
plastic T-1 3/4 package.
CATHODE
0.050
(1.25)
0.020 (0.51)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1
0.100 (2.54)
NOM
0.240 (6.10)
0.215 (5.45)
Schematic
ANODE
CATHODE
QED121, QED122, QED123 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Notes:
1. Derate power dissipation linearly 2.67mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering T emperature (Iron)
Soldering T emperature (Flow)
(2)(3)(4)
(2)(3)
240 for 5 sec °C
260 for 10 sec °C
Continuous Forward Current 100 mA
Reverse Voltage 5 V
Power Dissipation
(1)
(T
= 25°C)
A
200 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
TC
2 Θ
V
TC
I
I
I
I
TC
C
Peak Emission Wavelength I
PE
Temperature Coefficient 0.2 nm
λ
1
/2 Emission Angle I
Forward Voltage I
F
Temperature Coefficient -6 mV
VF
Reverse Current V
R
Radiant Intensity QED121 I
E
Radiant Intensity QED122 I
E
Radiant Intensity QED123 I
E
Temperature Coefficient -0.3 %
IE
t
Rise Time I
r
t
Fall Time 800 ns
f
Junction Capacitance V
j
= 20mA 890 nm
F
= 100mA 16 °
F
= 100mA, tp = 20ms 1.7 V
F
= 5V 10 µA
R
= 100mA, tp = 20ms 16 40 mW/sr
F
= 100mA, tp = 20ms 32 100 mW/sr
F
= 100mA, tp = 20ms 50 70 mW/sr
F
= 100mA 900 ns
F
= 0V 11 pF
R
/
°C
/
°C
/
°C
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QED121, QED122, QED123 Rev. 1.0.1 2
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