Fairchild QEC121, QEC122, QEC123 service manual

QEC121, QEC122, QEC123 — Plastic Infrared Light Emitting Diode

August 2008

QEC121, QEC122, QEC123
Plastic Infrared Light Emitting Diode

Features

■

λ

= 880nm

Chip material = AlGaAs

■

■

Package type: T-1 (3mm)
Matched photosensor: QSC112/QSC113/QSC114

■

■

Narrow emission angle, 8° at 80% intensity
High output power

■

■

Package material and color: clear, purple tinted, plastic

PACKAGE DIMENSIONS

Package Dimensions

0.116 (2.95)

REFERENCE

SURFACE

0.052 (1.32)

0.032 (0.082)

0.800 (20.3)
MIN

0.193 (4.90)

0.030 (0.76)
NOM

Description

The QEC121, QEC122 and QEC123 are 880nm AlGaAs
LED encapsulated in a clear purple tinted, plastic T-1
package.

CATHODE

0.050 (1.27)

0.100 (2.54)
NOM

Schematic

0.155 (3.94)

0.018 (0.46)
SQ. (2x)

Notes:

1. Dimensions of all drawings are in inches (mm).

2. Tolerance is ±0.10 (0.25) on all non-nominal dimensions
unless otherwise specified.

©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEC121, QEC122, QEC123 Rev. 1.0.1

ANODE

CATHODE

QEC121, QEC122, QEC123 — Plastic Infrared Light Emitting Diode

Absolute Maximum Ratings

(T

= 25°C unless otherwise specified)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol Parameter Rating Units

T

OPR

T

STG

T

SOL-I

T

SOL-F

I

F

V

R

P

D

Notes:

1. Derate power dissipation linearly 1.33mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16" (1.6mm) minimum from housing.

Electrical / Optical Characteristics

Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering T emperature (Iron)
Soldering T emperature (Flow)

(2)(3)(4)

(2)(3)

240 for 5 sec °C

260 for 10 sec °C
Continuous Forward Current 50 mA
Reverse Voltage 5 V
Power Dissipation

(1)

(T

= 25°C)

A

100 mW

Symbol Parameter Test Conditions Min. Typ. Max. Units

λ

TC

2 Θ

V

TC

I
I
I
I

TC

C

Peak Emission Wavelength I

PE

Temperature Coefficient 0.2 nm

λ

1

/2 Emission Angle I

Forward Voltage I

F

Temperature Coefficient -6 mV

VF

Reverse Current V

R

Radiant Intensity QEC121 I

E

Radiant Intensity QEC122 I

E

Radiant Intensity QEC123 I

E

Temperature Coefficient -0.3 %

IE

t

Rise Time I

r

t

Fall Time 800 ns

f

Junction Capacitance V

j

= 100mA 890 nm

F

= 100mA 18 °

F

= 100mA, tp = 20ms 1.7 V

F

= 5V 10 µA

R

= 100mA, tp = 20ms 14 mW/sr

F

= 100mA, tp = 20ms 27 94 mW/sr

F

= 100mA, tp = 20ms 39 45 mW/sr

F

= 100mA 900 ns

F

= 0V 11 pF

R

/

°C

/

°C

/

°C

©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEC121, QEC122, QEC123 Rev. 1.0.1 2