Fairchild QEC112, QEC113 service manual
QEC112, QEC113 — Plastic Infrared Light Emitting Diode
August 2008
QEC112, QEC113
Plastic Infrared Light Emitting Diode
Features
■
λ
= 940nm
Chip material = GaAs
■
■
Package type: T-1 (3 mm)
Can be used with QSCXXX Photosensor
■
■
Narrow Emission Angle, 8° at 80% intensity
High Output Power
■
■
Package material and color: Clear, peach tinted plastic
PACKAGE DIMENSIONS
Package Dimensions
0.116 (2.95)
REFERENCE
SURFACE
0.052 (1.32)
0.032 (0.082)
0.193 (4.90)
0.030 (0.76)
NOM
Description
The QEC11X is an 940nm GaAs LED encapsulated in a
clear peach tinted, plastic T-1 package.
0.800 (20.3)
MIN
0.050 (1.27)
0.018 (0.46)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (.25) on all non-nominal dimensions
unless otherwise specified.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEC112, QEC113 Rev. 1.0.2
CATHODE
0.100 (2.54)
NOM
0.155 (3.94)
Schematic
ANODE
CATHODE
QEC112, QEC113 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering T emperature (Iron)
Soldering T emperature (Flow)
(2,3,4)
(2,3)
240 for 5 sec °C
260 for 10 sec °C
Continuous Forward Current 50 mA
Reverse Voltage 5 V
Power Dissipation
(1)
(T
A
= 25°C)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
TC
2 Θ
V
TC
I
I
I
TC
C
Peak Emission Wavelength I
PE
Temperature Coefficient 0.3 nm
λ
1
/2 Emission Angle I
Forward Voltage I
F
Temperature Coefficient -2 mV
VF
Reverse Current V
R
Radiant Intensity QEC112 I
E
Radiant Intensity QEC113 I
E
Temperature Coefficient -0.7 %
IE
Rise Time I
t
r
t
Fall Time 800 ns
f
Junction Capacitance V
j
= 100mA 940 nm
F
= 100mA 18 °
F
= 100mA, tp = 20ms 1.5 V
F
= 5V 10 µA
R
= 100mA, tp = 20ms 6 30 mW/sr
F
= 100mA, tp = 20ms 14 40 mW/sr
F
= 100mA 800 ns
F
= 0V 14 pF
R
/
°C
/
°C
/
°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEC112, QEC113 Rev. 1.0.2 2
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