QEC112, QEC113 — Plastic Infrared Light Emitting Diode
August 2008
QEC112, QEC113
Plastic Infrared Light Emitting Diode
Features
■
λ
= 940nm
Chip material = GaAs
■
■
Package type: T-1 (3 mm)
Can be used with QSCXXX Photosensor
■
■
Narrow Emission Angle, 8° at 80% intensity
High Output Power
■
■
Package material and color: Clear, peach tinted plastic
PACKAGE DIMENSIONS
Package Dimensions
0.116 (2.95)
REFERENCE
SURFACE
0.052 (1.32)
0.032 (0.082)
0.193 (4.90)
0.030 (0.76)
NOM
Description
The QEC11X is an 940nm GaAs LED encapsulated in a
clear peach tinted, plastic T-1 package.
0.800 (20.3)
MIN
0.050 (1.27)
0.018 (0.46)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (.25) on all non-nominal dimensions
unless otherwise specified.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEC112, QEC113 Rev. 1.0.2
CATHODE
0.100 (2.54)
NOM
0.155 (3.94)
Schematic
ANODE
CATHODE
QEC112, QEC113 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering T emperature (Iron)
Soldering T emperature (Flow)
(2,3,4)
(2,3)
240 for 5 sec °C
260 for 10 sec °C
Continuous Forward Current 50 mA
Reverse Voltage 5 V
Power Dissipation
(1)
(T
A
= 25°C)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
TC
2 Θ
V
TC
I
I
I
TC
C
Peak Emission Wavelength I
PE
Temperature Coefficient 0.3 nm
λ
1
/2 Emission Angle I
Forward Voltage I
F
Temperature Coefficient -2 mV
VF
Reverse Current V
R
Radiant Intensity QEC112 I
E
Radiant Intensity QEC113 I
E
Temperature Coefficient -0.7 %
IE
Rise Time I
t
r
t
Fall Time 800 ns
f
Junction Capacitance V
j
= 100mA 940 nm
F
= 100mA 18 °
F
= 100mA, tp = 20ms 1.5 V
F
= 5V 10 µA
R
= 100mA, tp = 20ms 6 30 mW/sr
F
= 100mA, tp = 20ms 14 40 mW/sr
F
= 100mA 800 ns
F
= 0V 14 pF
R
/
°C
/
°C
/
°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEC112, QEC113 Rev. 1.0.2 2
QEC112, QEC113 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
NORMALIZED INTENSITY
0.2
0.1
0.0
Fig. 1 Normalized Intensity vs. Wavelength
700 750 800 850 900 950 1,000 1,050
λ (nm)
Fig. 3 Normalized Radiant Intensity vs. Forward Current
10
Normalized to:
I
= 100mA Pulsed
F
t
= 20mS
PW
Duty Cycle = 4%
T
= 25°C
A
1
Fig. 2 Peak Wavelength vs. Ambient Temperature
975
970
965
960
955
950
945
– PEAK EMISSION WAVELENGTH
940
PE
λ
935
010203040506070
TA – AMBIENT TEMPERTURE (°C)
Fig. 4 Normalized Radient Intensity vs. Ambient Temperature
1.4
1.2
1.0
0.8
0.6
IF = 20mA DC
80 90 100
Normalized to:
I
= 20mA Pulsed
F
t
= 20mS
PW
Duty Cycle = 4%
T
= 25°C
A
– NORMALIZED RADIANT INTENSITY
e
I
0.1
IF – FORWARD CURRENT (mA)
Fig. 5 Forward Voltage vs. Forward Current
3.5
IF Pulsed
t
= 20mS
PW
Duty Cycle = 4%
3.0
T
= 25°C
A
2.5
2.0
– FORWARD VOLTAGE (V)
F
1.5
V
1.0
IF – FORWARD CURRENT (mA)
10010 1000
10010 1000
0.4
0.2
– NORMALIZED RADIANT INTENSITY
e
I
0.0
010203040506070
TA – AMBIENT TEMPERTURE (°C)
Fig. 6 Forward Voltage vs. Ambient Temperature
1.55
IF = 20mA Pulsed
1.50
1.45
1.40
1.35
– FORWARD VOLTAGE (V)
F
V
1.30
1.25
010203040506070
TA – AMBIENT TEMPERTURE (°C)
t
Duty Cycle = 4%
PW
= 20mS
80 90 100
80 90
100
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEC112, QEC113 Rev. 1.0.2 3
QEC112, QEC113 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
Fig. 7 Radiation Diagram
90°
80°
70°
0.00.20.40.60.81.0 0.2 0.4 0.6 0.8 1.0
170°
180°
160°
150°
140°
130°
120°
110°
100°
(Continued)
60°
50°
40°
30°
20°
Fig. 8 Coupling Characteristics of QEC11X and QSC11X
1.0
Normalized to:
d = 0 inch
I
Pulsed
F
t
= 100µs
PW
Duty Cycle = 0.1%
V
= 5V
CC
R
= 100Ω
L
T
= 25°C
A
10°
0.8
0.6
0.4
0.2
0°
IF = 20 mA
(ON) – NORMALIZED COLLECTOR CURRENT
0.0
C
I
012345678
IF = 100 mA
LENS TIP SEPARATION (inches)
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEC112, QEC113 Rev. 1.0.2 4
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QEC112, QEC113 — Plastic Infrared Light Emitting Diode
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S W ORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERSTHESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
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under Sales Support.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary
No Identification Needed Ful
First Production
lProduction
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The
datasheet is for reference information only.
Rev. I36
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEC112, QEC113 Rev. 1.0.2 5
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