Fairchild PZTA29 service manual
PZTA29
NPN Darlington Transistor
• This device designed for applications requiring extremely high
current gain at collector currents to 500mA.
• Sourced from process 03.
4
1. Base 2.4. Collector 3. Emitter
1
SOT-223
PZTA29 NPN Darlington Transistor
3
2
Absolute Maximum Ratings *
Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
, T
T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics
Collector-Emitter Voltage 100 V
Collector-Base Voltage 100 V
Emitter-Base Voltage 12 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
Ta = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Max Units
Off Characteristics
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
Small Signal characteristics
f
T
C
obo
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Collector-Emitter Bre akdown Voltage IC = 100µA, VBE = 0 100 V
Collector-Base Breakdown Voltage IC = 100µA, IE = 0 100 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 12 V
Collector Cutoff Current VCB = 80V, IE = 0 100 nA
Collector Cutoff Current VCE = 80V, VBE = 0 500 nA
Emitter Cut-off Current VEB = 10V, IC = 0 100 nA
DC Current Gain VCE = 5.0V, IC = 10mA
Collector-Emitter Sat uration Voltage IC = 10mA, IB = 0.01mA
Base-Emitter On Volt age IC = 100mA, VCE = 5.0V 2.0 V
Current Gain Bandwidth Product IC = 10mA, VCE = 5.0V, f = 100MHz 125 MHz
Output Capacitance VCB = 1.0V, IE = 0, f = 1.0MHz 8.0 pF
V
= 5.0V, IC = 100mA
CE
= 100mA, IB = 0.1mA
I
C
10,000
10,000
1.2
1.5
V
V
©2005 Fairchild Semiconductor Corporation
PZTA29 Rev. A
1
www.fairchildsemi.com
PZTA29 NPN Darlington Transistor
Thermal Characteristics
Ta = 25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJA
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm
Total Device Dissipation
Derate above 25°C
1,000
8.0
Thermal Resistance, Junction to Ambient 125 °C/W
2
mW
mW/°C
PZTA29 Rev. A
2
www.fairchildsemi.com
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