PZTA29
NPN Darlington Transistor
• This device designed for applications requiring extremely high
current gain at collector currents to 500mA.
• Sourced from process 03.
4
1. Base 2.4. Collector 3. Emitter
1
SOT-223
PZTA29 NPN Darlington Transistor
3
2
Absolute Maximum Ratings *
Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
, T
T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics
Collector-Emitter Voltage 100 V
Collector-Base Voltage 100 V
Emitter-Base Voltage 12 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
Ta = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Max Units
Off Characteristics
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
Small Signal characteristics
f
T
C
obo
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Collector-Emitter Bre akdown Voltage IC = 100µA, VBE = 0 100 V
Collector-Base Breakdown Voltage IC = 100µA, IE = 0 100 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 12 V
Collector Cutoff Current VCB = 80V, IE = 0 100 nA
Collector Cutoff Current VCE = 80V, VBE = 0 500 nA
Emitter Cut-off Current VEB = 10V, IC = 0 100 nA
DC Current Gain VCE = 5.0V, IC = 10mA
Collector-Emitter Sat uration Voltage IC = 10mA, IB = 0.01mA
Base-Emitter On Volt age IC = 100mA, VCE = 5.0V 2.0 V
Current Gain Bandwidth Product IC = 10mA, VCE = 5.0V, f = 100MHz 125 MHz
Output Capacitance VCB = 1.0V, IE = 0, f = 1.0MHz 8.0 pF
V
= 5.0V, IC = 100mA
CE
= 100mA, IB = 0.1mA
I
C
10,000
10,000
1.2
1.5
V
V
©2005 Fairchild Semiconductor Corporation
PZTA29 Rev. A
1
www.fairchildsemi.com
PZTA29 NPN Darlington Transistor
Thermal Characteristics
Ta = 25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJA
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm
Total Device Dissipation
Derate above 25°C
1,000
8.0
Thermal Resistance, Junction to Ambient 125 °C/W
2
mW
mW/°C
PZTA29 Rev. A
2
www.fairchildsemi.com
Mechanical Dimensions
PZTA29 NPN Darlington Transistor
SOT-223
PZTA29 Rev. A
Dimensions in Millimeters
3
www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
A
CEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
Across the board. Around the w or ld. ™
The Power Franchise
®
Programmable Active Droop™
®
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
®
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
UniFET™
VCX™
®
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUM E ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
PZTA29 NPN Darlington Transistor
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information F orma tive or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
4
PZTA29 Rev. A
Rev. I15
www.fairchildsemi.com
Loading...