Fairchild MPSA06, MMBTA06, PZTA06 service manual

MMBTA06MPSA06 PZTA06
MPSA06 / MMBTA06 / PZTA06
C
E
C
B
E
TO-92
SOT-23
Mark: 1G
B
C
C
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 80 V Collector-Base Voltage 80 V Emitter-Base Voltage 4.0 V Collector Current - Continuous 500 mA Operating and Stora ge Junction Temperature Range -55 to +150
°
C
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA06 *MMBTA06 **PZTA06
P
D
R
JC
θ
R
JA
θ
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
1,000
8.0
Thermal Resistance, Junction to Case 83.3 Thermal Resistance, Junction to Ambient 200 357 125
2
.
mW
mW/°C
C/W
°
C/W
°
µ
µ
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle 2.0%
Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 80 V Emitter-Base Breakdown Voltage
= 100 µA, IC = 0
I
E
4.0 V Collector-Cutoff Current VCE = 60 V, IB = 0 0.1 Collector-Cutoff Current VCB = 80 V, IE = 0 0.1
DC Current Gain IC = 10 mA, VCE = 1.0 V
I
= 100 mA, VCE = 1.0 V
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V
)
C
100 100
Base-Emitter On Voltag e IC = 100 mA, VCE = 1.0 V 1.2 V
Current Gain - Bandwidth Product IC = 10 mA, VCE = 2.0 V,
100 MHz
f = 100 MHz
A A
MPSA06 / MMBTA06 / PZTA06
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0 Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5 Vtf=4 Xtf=6 Rb=10)
T ypical Characteristics
Typica l P uls ed Current G a in
vs Collector Current
200
150
100
50
FE
0.0 01 0.01 0.1
h - TYPICAL PUL SED CURRENT G AI N
125 °C
25 °C
- 40 °C
I - CO LLE C TOR CU RR ENT (A)
C
V = 1V
CE
Co llecto r -Emitter Sa turati o n Voltag e vs Coll ector Cur rent
0.5
0.4
0.3
0.2
0.1
0
0.1 1 10 100 100 0
CE SAT
V - COLLEC TOR EMI TTE R VO LTAGE ( V)
= 10
β
25 °C
I - COLLECTOR CURRENT (mA)
C
125 °C
- 40 °C
3
Typical Characteristics (continued)
MPSA06 / MMBTA06 / PZTA06
NPN General Purpose Amplifier
(continued)
Base-Em itter Saturati o n
Voltage vs C o llector Current
= 10
β
1
0.8
0.6
0.4
BESAT
V - BA SE EM ITTER VOLTAGE (V)
0.1 1 10 100 1000
- 40 °C
25 °C
125 °C
I - COLLEC TOR CURRENT (mA)
C
Collector -Cutoff Current vs Amb ient Temp erature
10
V = 80 V
CB
1
0.1
0.01
Base Emitter ON Voltage vs
Collector Cur rent
1
0.8
0.6
0.4
0.2
0
BEON
1 10 100 1000
V - BASE EMITTER ON VOLTAGE (V)
- 40 °C
25 °C
125 °C
V = 5V
CE
I - COLLECTOR CURRENT (mA)
C
Collector Saturation Region
2
1.5
1
I =
1 mA
0.5
C
10 mA
T = 25°C
A
100 mA
CBO
I - COLLECTOR CURRENT (nA)
0.001 25 50 75 100 125
T - AMBIE NT TEMPERATURE ( C)
A
°
Col lecto r-E m itter Br eakdow n
Voltage with Resistance
Between Emitter-Base
117
116
115
114
113
112
CER
111
0.1 1 10 100 1000
BV - BREAKDOWN VOLTAGE (V)
RESISTANCE (k )
0
CE
4000 10000 20000 30000 50000
V - COLLECTOR-EMITTER VOLTAGE (V)
I - BASE CURRENT (uA)
B
Input and Output Ca pacitance
vs Reverse Voltage
100
10
1
CAP ACITANCE (pF)
0.1
0.1 1 10 100
V - CO LL ECTOR VO LTAGE (V )
CE
f = 1.0 MHz
C
ib
C
ob
Typical Characteristics (continued)
MPSA06 / MMBTA06 / PZTA06
NPN General Purpose Amplifier
(continued)
Gain Bandwidth Product
vs Collector Cur rent
400
V = 5 V
CE
350
300
250
200
150
100
T
1102050100
f - GAIN BANDWIDTH PRODUCT ( MHz)
I - CO LLECTOR CURRENT (mA)
C
Power Dissipation vs
Ambient Temperature
1
0.75
TO-92
0.5
SOT-23
0.25
D
P - POWER DISSIPATION (W)
0
0 25 50 75 100 125 150
SOT-223
TEMPERATURE ( C)
o
3
TO-92 Tape and Reel Data
TO-92 Packaging Configuration: Figure 1.0
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
SPEC REV:
D9842
QA REV:
HTB:B
QTY:
10000
SPEC:
B2
(FSCINT)
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN:
QTY: 2000
SPEC:
N/F: F (F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing Style Quantity EOL c o d e
Reel A 2,000 D26Z
Ammo M 2,000 D74Z
Unit w eight = 0.22 gm Reel weight with components = 1.04 kg Amm o weight w ith components = 1.02 kg Max q uantity per intermediate box = 10,00 0 units
E2,000 D27Z
P2,000 D75Z
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
L34Z
DESCRIPTION
TO-18 OPTION STD NO LEAD CLIP
TO-5 OPTION STD NO LEAD CLIP TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96 TO-92 STANDARD
STRAIGHT FOR: PKG 94
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX), 97, 98
NO LEADCLIP
NO LEADCLIP
LEADCLIP
DIMENSION
327mm x 158mm x 135mm
Immediate Box
Customized Label
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
2.0 K / BOX
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
5 Reels per
Intermediate Box
F63TNR Label
Customized Label
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
5 Ammo boxes per
Intermediate Box
F63TNR Label
BULK OPTION
See Bulk Packing Information table
FSCINT Label
2000 units per EO70 box for
std option
375mm x 267mm x 375mm
Intermediate Box
333mm x 231mm x 183mm
Intermediate Box
Anti-static
Bubble Sheets
114mm x 102mm x 51mm
FSCINT Label
Customized Label
FSCINT Label
Customized Label
Immediate Box
530mm x 130mm x 83mm
FSCINT Label
©2001 Fairchild Semiconductor Corporation
Intermediate box
ustomized
C Label
10,000 units maximum
per intermediate box
for std option
5 EO70 boxes per intermediate Box
March 2001, Rev. B1
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