This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
SymbolParameterValueUnits
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage80V
Collector-Base Voltage80V
Emitter-Base Voltage4.0V
Collector Current - Continuous500mA
Operating and Stora ge Junction Temperature Range-55 to +150
°
C
E
Thermal Characteristics TA = 25°C unless otherwise noted
SymbolCharacteristicMaxUnits
MPSA06*MMBTA06**PZTA06
P
D
R
JC
θ
R
JA
θ
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
1,000
8.0
Thermal Resistance, Junction to Case83.3
Thermal Resistance, Junction to Ambient200357125
2
.
mW
mW/°C
C/W
°
C/W
°
µ
µ
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
SymbolParameterTest ConditionsMinMaxUnits
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Co llecto r -Emitter Sa turati o n
Voltag e vs Coll ector Cur rent
0.5
0.4
0.3
0.2
0.1
0
0.1110100100 0
CE SAT
V - COLLEC TOR EMI TTE R VO LTAGE ( V)
= 10
β
25 °C
I - COLLECTOR CURRENT (mA)
C
125 °C
- 40 °C
3
Typical Characteristics (continued)
MPSA06 / MMBTA06 / PZTA06
NPN General Purpose Amplifier
(continued)
Base-Em itter Saturati o n
Voltage vs C o llector Current
= 10
β
1
0.8
0.6
0.4
BESAT
V - BA SE EM ITTER VOLTAGE (V)
0.11101001000
- 40 °C
25 °C
125 °C
I - COLLEC TOR CURRENT (mA)
C
Collector -Cutoff Current
vs Amb ient Temp erature
10
V = 80 V
CB
1
0.1
0.01
Base Emitter ON Voltage vs
Collector Cur rent
1
0.8
0.6
0.4
0.2
0
BEON
1101001000
V - BASE EMITTER ON VOLTAGE (V)
- 40 °C
25 °C
125 °C
V = 5V
CE
I - COLLECTOR CURRENT (mA)
C
Collector Saturation Region
2
1.5
1
I =
1 mA
0.5
C
10 mA
T = 25°C
A
100 mA
CBO
I - COLLECTOR CURRENT (nA)
0.001
255075100125
T - AMBIE NT TEMPERATURE ( C)
A
°
Col lecto r-E m itter Br eakdow n
Voltage with Resistance
Between Emitter-Base
117
116
115
114
113
112
CER
111
0.11101001000
BV - BREAKDOWN VOLTAGE (V)
RESISTANCE (k )
Ω
0
CE
40001000020000 3000050000
V - COLLECTOR-EMITTER VOLTAGE (V)
I - BASE CURRENT (uA)
B
Input and Output Ca pacitance
vs Reverse Voltage
100
10
1
CAP ACITANCE (pF)
0.1
0.1110100
V - CO LL ECTOR VO LTAGE (V )
CE
f = 1.0 MHz
C
ib
C
ob
Typical Characteristics (continued)
MPSA06 / MMBTA06 / PZTA06
NPN General Purpose Amplifier
(continued)
Gain Bandwidth Product
vs Collector Cur rent
400
V = 5 V
CE
350
300
250
200
150
100
T
1102050100
f - GAIN BANDWIDTH PRODUCT ( MHz)
I - CO LLECTOR CURRENT (mA)
C
Power Dissipation vs
Ambient Temperature
1
0.75
TO-92
0.5
SOT-23
0.25
D
P - POWER DISSIPATION (W)
0
0255075100125150
SOT-223
TEMPERATURE ( C)
o
3
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration: Figure 1.0
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
SPEC REV:
D9842
QA REV:
HTB:B
QTY:
10000
SPEC:
B2
(FSCINT)
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:
QTY: 2000
SPEC:
N/F: F (F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
PackingStyleQuantityEOL c o d e
ReelA2,000D26Z
AmmoM2,000D74Z
Unit w eight = 0.22 gm
Reel weight with components = 1.04 kg
Amm o weight w ith components = 1.02 kg
Max q uantity per intermediate box = 10,00 0 units