Fairchild PN3640, MMBT3640 service manual

PN3640 MMBT3640

A

g

C

B

E

PNP Switching Transistor

This device is designed for very high speed saturated switching
at collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.

TO-92

C

SOT-23

Mark: 2J

PN3640 / MMBT3640

E

B

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

st

Collector-Emitter Voltag e 12 V
Collector-Base Voltage 12 V
Emitter-Base Voltage 4.0 V
Collector Current - Continuous 200 mA
Operating and Stora ge Junction Temperature Range -55 to +150

°

C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

PN3640 *MMBT3640

P

D

R

θ

JC

R

θ

J

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Total Device Dissipation

Derate above 25°C

350

2.8

225

1.8

Ther mal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 556

mW

mW/°C

C/W

°

C/W

°

 2001 Fairchild Semiconductor Corporation

PN3640/MMBT3640, Rev A

PNP Switching Transistor

(BR)

(BR)

(BR)

(BR)

A

A

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

CEO

V

CES

V

CBO

V

EBO

I

CES

I

B

ON CHARACTERISTICS*

h

FE

V

CE(sat)

V

BE(sat)

Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 012V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage

= 100 µA, VBE = 0

I

C

= 100 µA, IE = 0

I

C

= 100 µA, I

I

E

C

= 0

Collector Cut off Current VCE = 6.0 V, VBE = 0

V

= 6.0 V, VBE = 0, T

CE

= 65°C

12 V
12 V

4.0 V

0.01

1.0

A

µ

A

µ

Base Current VCE = 6.0 V, VBE = 0 10 nA

DC Current Gain IC = 10 mA, VCE = 0.3 V

= 50 mA, VCE = 1.0 V

I

C

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA

I

= 10 mA, IB = 1.0 mA

C

= 50 mA, IB = 5.0 mA

I

C

= 10 mA, IB= 1.0 mA,T

I

C

Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA

= 10 mA, IB = 1.0 mA

I

C

I

= 50 mA, IB = 5.0 mA

C

=65°C

30
20

0.75

0.8

120

0.3

0.2

0.6

0.25

0.95

1.0

1.5

V
V
V
V

V
V
V

PN3640 / MMBT3640

SMALL SIGNAL CHARACTERISTICS

f

T

C

obo

C

ibo

Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,

f = 100 MHz

Output Capacitance VCB = 5.0 V, IE = 0,

f = 1.0 MHz

Input Capacitance VBE = 0.5 V, IC = 0,

f = 1.0 MHz

SWITCHING CHARACTERISTICS

t

d

t

r

t

s

t

f

t

on

t

off

Delay T ime
Rise T ime IC = 50 mA, IB1 = 5.0 mA 30 ns
Storage Time VCC = 6.0 V, IC = 50 mA, 20 ns
Fall Time IB1 = IB2 = 5.0 mA 12 ns
Turn-On Ti me

Turn-Off Time

V

V
IC = 50 mA, IB1 = 5.0 mA

VCC = 1.5 V, IC = 10 mA, 60 ns
IB1 = IB2 = 0.5 mA

V
IC = 50 mA, IB1 = 5.0 mA

VCC = 1.5 V, IC = 10 mA, 75 ns
IB1 = IB2 = 0.5 mA

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

= 6.0 V, V

CC

= 6.0 V, V

CC

= 6.0 V, V

CC

BE(off)

BE(off)

BE(off)

= 1.9 V,

= 1.9 V,

= 1.9 V,

500 MHz

3.5 pF

3.5 pF

10 ns

25 ns

35 ns

TO-92 Tape and Reel Data

TO-92 Packaging
Configuration: Figure 1.0

FSCINT Label sample

FAIRCHILD SEMICONDUCTOR CORPORATION

LOT:

CBVK741B019

NSID:

PN2222N

D/C1:

SPEC REV:

D9842

QA REV:

HTB:B

QTY:

10000

SPEC:

B2

(FSCINT)

F63TNR Label sample

LOT: CBVK741B019

FSID: PN222N

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 2000

SPEC:

N/F: F (F63TNR)3

TO-92 TNR/AMMO PACKING INFROMATION

Packing Style Quantity EOL code

Reel A 2,000 D26Z

Ammo M 2,000 D74Z

Unit w eight = 0.22 g m
Reel weight with components = 1.04 kg
Amm o weight with componen ts = 1.02 kg
Max q uantity per intermediate box = 10,000 units

E2,000 D27Z

P2,000 D75Z

(TO-92) BULK PACKING INFORMATION

EOL

CODE

J18Z

J05Z

NO EOL

CODE

L34Z

DESCRIPTION

TO-18 OPTION STD NO LEAD CLIP

TO-5 OPTION STD NO LEAD CLIP
TO-92 STANDARD

STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96

TO-92 STANDARD

STRAIGHT FOR: PKG 94
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98

NO LEADCLIP

NO LEADCLIP

LEADCLIP

DIMENSION

327mm x 158mm x 135mm

Immediate Box

Customized
Label

QUANTITY

2.0 K / BOX

1.5 K / BOX

2.0 K / BOX

2.0 K / BOX

TAPE and REEL OPTION

See Fig 2.0 for various

Reeling Styles

5 Reels per

Intermediate Box

F63TNR
Label

Customized
Label

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo

Pack Options

5 Ammo boxes per

Intermediate Box

F63TNR
Label

BULK OPTION

See Bulk Packing
Information table

FSCINT Label

2000 units per

EO70 box for

std option

375mm x 267mm x 375mm

Intermediate Box

333mm x 231mm x 183mm

Intermediate Box

Anti-static

Bubble Sheets

114mm x 102mm x 51mm

FSCINT
Label

Customized
Label

FSCINT
Label

Customized
Label

Immediate Box

530mm x 130mm x 83mm

FSCINT Label

©2001 Fairchild Semiconductor Corporation

Intermediate box

ustomized

C
Label

10,000 units maximum

per intermediate box

for std option

5 EO70 boxes per
intermediate Box

March 2001, Rev. B1