Fairchild PN2369A, MMBT2369A service manual

PN2369A MMBT2369A

C

B

E

NPN Switching Transistor

This device is designed for high speed saturated switching at collector
currents of 10 mA to 100 mA. Sourced from Process 21.

TO-92

C

SOT-23

Mark: 1S

PN2369A / MMBT2369A

E

B

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

Collector-Emit t er Voltage 15 V
Collector-Base Vo ltage 40 V
Emitter-Base Voltage 4.5 V
Collector Current - Continuous 200 mA
Operating and Stora ge Junction Temperature Range -55 to +150

°

C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

PN2369A MMBT2369A*

P

D

R

JC

θ

R

JA

θ

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 556

350

2.8

225

1.8

mW

mW/°C

C/W

°

C/W

°

 1997 Fairchild Semiconductor Corporation

µ

µ

NPN Switching Transistor

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

sat

BE(

Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 15 V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage

I

= 10 µA, VBE = 0

C

I

= 10 µA, IE = 0

C

I

= 10 µA, IC = 0

E

Collector Cu toff Current VCB = 20 V, IE = 0

V

= 20 V, IE = 0, TA = 125°C

CB

DC Current Gain* IC = 10 mA, VCE = 1.0 V

I

= 10 mA,V

C

= 100 mA, VCE = 1.0 V

I

Collector-Emitter S aturation Voltage* IC = 10 mA, IB = 1.0 mA

)

Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

)

C

= 10 mA, I

I

C

= 30 mA, IB = 3.0 mA

I

C

= 100 mA, IB = 10 mA

I

C

= 10 mA, I

I

C

I

= 10 mA, I

C

= 30 mA, IB = 3.0 mA

I

C

= 100 mA, IB = 10 mA

I

C

= 0.35 V,TA =-55°C

CE

= 1.0 mA,TA =125°C

B

= 1.0 mA,TA = -55°C

B

= 1.0 mA,TA= 125°C

B

40 V
40 V

4.5 V

0.4
30

40

120
20
20

0.2

0.3

0.25

0.5

0.7

0.85

1.02

0.59

1.15

1.6

PN2369A / MMBT2369A

A
A

V
V
V
V

V
V
V
V
V

SMALL SIGNAL CHARACTERISTICS

C

obo

C

ibo

h

fe

Output Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF
Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 5.0 pF
Small-Signal Current Gain IC = 10 mA, VCE = 10 V,

R

= 2.0 kΩ, f = 100 MHz

G

5.0

SWITCHING CHARACTERISTICS

t

s

t

on

t

off

Storage Time IB1 = IB2 = IC = 10 mA 13 ns
Turn-On Time VCC = 3.0 V, IC = 10 mA,

I

= 3.0 mA

B1

Turn-Off Time VCC = 3.0 V, IC = 10 mA,

I

= 3.0 mA, IB2 = 1.5 mA

B1

12 ns

18 ns

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model

NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)

T ypical Characteristics

PN2369A / MMBT2369A

NPN Switching Transistor

(continued)

DC Current Gain

vs Col le c t or Curre nt

200

V = 1.0V

CE

150

125 °C

100

25 ° C

50

FE

h - DC CURRENT GAIN

0.01 0.1 1 10 100

I - CO LLE C TOR CU RRE N T (mA)

C

- 40 °C

Bas e-E mitter Sat ura ti o n

V o l t age vs Co llecto r Cur rent

1.4

1.2

1

0.8

0.6

0.4

BESAT

V - BASE-EMITTER VOLTAGE (V)

0.1 1 10 100 300

= 10

β

- 40 °C

25 °C

125 °C

I - COLLECTOR CURRENT (mA)

C

Collecto r-Emi tte r Satu rati on

V o lt age v s C ollec tor C ur rent

0.5

β

= 10

0.4

0.3

25 °C

0.2

- 40 °C

0.1

0

0.1 1 10 100 500

CESAT

V - COLLECTOR-EMITTER VOLTAGE (V)

I - COLLECTOR CURRENT (mA)

C

125 °C

Base-Emitter ON V oltage vs

Co llec tor Cur rent

1

0.8

0.6

0.4

0.2

BE(O N)

0.1 1 10 100

V - BASE-EMI TTER ON VOLTAG E ( V)

- 40°C
25 °C

125 °C

V = 1.0V

I - COLLECTOR CURRENT (mA)

C

CE

Collector-Cutoff Current
vs Amb ient Tem perature

600

V = 20V

CB

100

10

CBO

I - COLLECTOR CURRENT (nA)

1

25 50 75 100 125 150

T - AMBIE NT TEMP E RATUR E ( C)

A

°

Typical Characteristics (continued)

PN2369A / MMBT2369A

NPN Switching Transistor

(continued)

Output Capacitance vs

Reverse Bias Voltage

5

4

C

ibo

3

C

obo

2

CAPACITANCE (pF)

1

0

0.1 0.5 1 5 10 50

REVERSE BIAS VOLTAGE (V)

F = 1.0MHz

Sw itchin g Tim es vs

Amb ient Tem perature

12

10

8

6

4

SWITCHING TIMES (ns)

2

I = 10 mA, I = 3.0 mA, I = 1 .5 mA, V = 3.0 V

C

0

25 50 75 100

B1

T - AMBIENT TE MPERATURE ( C)

A

t

t

t

s

s

f

t

t

t

s

s

s

t

t

t

s

s

d

t

t

t

s

s

r

B2

CC

°

Switching Times vs

Collector Current

100

50

20
10

5

SWITCHING TIMES (ns)

2
1

2 5 10 20 50 100 300

I - COLL EC TOR CURRENT (m A)

C

V = 3.0 V

CC

I = 10 I = I = 10

C

t

t

t

s

s

d

B1

B2

t

t

t

s

s

r

t

t

t

t

t

t

s

s

s

s

s

f

Storage Time vs Turn On

and Turn Off Base Currents

-12

I = 10 mA

C

V = 3.0 V

-10

CC

-8

-6

-4

-2

0

B2

I - TURN OFF BASE CURRENT (mA)

0246810

t = 3.0 ns

s

4.0 ns

6.0 ns

I - TURN ON BASE CURRENT (mA)

B1

Storage Time vs Turn On

and Turn Off Base Currents

-12

I = 10 mA

C

V = 3.0 V

-10

CC

-8

-6

-4

-2

0

B2

I - TURN OFF BASE CURRENT (m A)

0246810

t = 3.0 ns

s

4.0 ns

6.0 ns

I - TURN ON BASE CURR E NT (mA)

B1

Storage Time vs Turn On

and Turn Off Base Currents

-30

I = 100 mA

C

V = 3.0 V

CC

-25

t = 3.0 ns

S

-20

-15

-10

-5

0

B2

I - TURN OFF BASE CURRENT (m A)

0 5 10 15 20 25 30

I - TURN ON BASE CURRENT (mA)

B1

4.0 ns

6.0 ns

16.0 ns

8.0 ns

Typical Characteristics (continued)

PN2369A / MMBT2369A

NPN Switching Transistor

(continued)

Fall Time vs Turn On

and Turn Off Base Currents

-6

I = 10 mA

C

V = 3.0 V

-5

CC

-4

-3

-2

-1

0

B2

I - TURN OFF BASE CURRENT (m A)

0246810

t = 7.0 ns

f

I - TURN ON BASE CURR E NT (mA)

B1

8.0 ns

10 ns

Fall Time vs Turn On

and Turn Off Base Currents

-30

I = 100 mA

C

V = 3.0 V

-25

CC

-20

t = 2.0 ns

f

-15

-10

-5

0

B2

I - TURN OFF BASE CURRENT (mA)

0 5 10 15 20 25 30

I - TURN ON BASE CURRENT (mA)

B1

3.0 ns

4.0 ns

8.0 ns

12.0 ns

Fall Time v s Turn On

a nd Turn Off B ase C ur r en ts

-12

I = 30 mA

C

V = 3 .0 V

-10

CC

-8

t = 2.0 ns

f

-6

-4

-2

0

B2

I - TURN OFF BASE CURRENT (mA)

024681012

I - TURN ON BASE CURRENT (mA)

B1

3.0 ns

4.0 ns

5.0 ns

Delay Time vs Base-Emitter OFF

Vo ltage and Turn On Base Current

-6

I = 10 mA

C

V = 3.0 V

CC

-5

t = 8.0 ns

d

-4

-3

5.0 ns

-2

-1

0

BE(O)

12 51020 50

V - BASE-EMITTER OFF VOLTAG E (V)

I - TURN ON BASE CURRENT (mA)

B1

4.0 ns

3.0 ns

R is e Ti me vs . Turn On Bas e

Cu rre nt an d Co llec t or Cur re nt

50

V = 3.0 V

CC

t = 2.0 ns

10

r

5.0 ns

1

10 ns

0

B1

1 10 100 500

I - TURN ON BASE CURRENT (mA)

I - COLLECTOR CU RRENT (mA )

C

20 ns

Po w e r D is s ipa t ion vs

Amb ien t Tempe ratur e

500

400

TO-92

300

200

SOT-23

100

D

P - PO W ER DISSI PATION (mW)

0

0255075100125150

TE MPERATURE ( C )

°

T est Circuits

PN2369A / MMBT2369A

NPN Switching Transistor

(continued)

0

- 10

Pulse generator
VIN Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
Duty Cycle < 2%

V

IN

0

t

on

Pulse generator
VIN Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
Duty Cycle < 2%

µµ

0.1

µF

V

'A'

V

IN

IN

56

µµ

0.1

µF

µµ

ΩΩ

Ω

ΩΩ

µµ

0.0023

µF

µµ

11 V

ΩΩ

500

Ω

ΩΩ

ΩΩ

500

Ω

ΩΩ

++

µµ

10

µF

µµ

890

10

µµ

µF

µµ

µµ

ΩΩ

Ω

ΩΩ

91

0.0023

10 V

ΩΩ

1 K

Ω

ΩΩ

ΩΩ

Ω

ΩΩ

µµ

µF

µµ

FIGURE 1: Charge Storage Time Measurement Circuit

V

CC

ΩΩ

Ω

ΩΩ

= 3.0 V

OUT

µµ

µF

µµ

10%

V

OUT

t

on

VBB = - 3.0 V
V

= + 15.25 V

IN

90%

ΩΩ

220

Ω

0.1

ΩΩ

50

0.0023

µµ

µF

µµ

µµ

µF

µµ

V

V

IN

3.3 K

50

0.0023

ΩΩ

Ω

ΩΩ

ΩΩ

Ω

ΩΩ

ΩΩ

3.3 K

Ω

ΩΩ

µµ

µF

µµ

V

µµ

0.05

µF 0.05

µµ

µµ

0.1

µF

µµ

BB

+6V

0

10% Pulse waveform
at point ' A'

- 4V

V

OUT

t

s

0

V

IN

V

OUT

t

off

T o sampling oscilloscope input
impedance = 50Ω
Rise Time ≤ 1 ns

10%

t

off

VBB = 12 V
V

= - 20.9 V

IN

10%

90%

V

OUT

FIGURE 2: tON, t

Measurement Circuit

OFF

TO-92 Tape and Reel Data

TO-92 Packaging
Configuration: Figure 1.0

FSCINT Label sample

FAIRCHILD SEMICONDUCTOR CORPORATION

LOT:

CBVK741B019

NSID:

PN2222N

D/C1:

SPEC REV:

D9842

QA REV:

HTB:B

QTY:

10000

SPEC:

B2

(FSCINT)

F63TNR Label sample

LOT: CBVK741B019

FSID: PN222N

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 2000

SPEC:

N/F: F (F63TNR)3

TO-92 TNR/AMMO PACKING INFROMATION

Packing Style Quantity EOL code

Reel A 2,000 D26Z

E2,000 D27Z

Ammo M 2,000 D74Z

P2,000 D75Z

Unit w eight = 0.22 gm
Reel weight with compo nents = 1.04 kg
Amm o wei g ht with comp onents = 1.02 kg
Max q uantity p er intermediate box = 10,000 u n i ts

(TO-92) BULK PACKING INFORMATION

EOL

CODE

J18Z

J05Z

NO EOL

CODE

L34Z

DESCRIPTION

TO-18 OPTION STD NO LEAD CLIP

TO-5 OPTION STD NO LEAD CLIP
TO-92 STANDARD

STRAIGHT FOR: PKG 92,

94 (NON PROELECTRON

SERIES), 96

TO-92 STANDARD
STRAIGHT FOR: PKG 94

(PROELECTRON SERIES

BCXXX, BFXXX, BSRXXX),
97, 98

NO LEADCLIP

NO LEADCLIP

LEADCLIP

DIMENSION

327mm x 158mm x 135mm

Immediate Box

Customized
Label

QUANTITY

2.0 K / BOX

1.5 K / BOX

2.0 K / BOX

2.0 K / BOX

TAPE and REEL OPTION

See Fig 2.0 for various

Reeling Styles

5 Reels per

Intermediate Box

F63TNR
Label

Customized
Label

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo

Pack Options

5 Ammo boxes per

Intermediate Box

F63TNR
Label

BULK OPTION

See Bulk Packing
Information table

FSCINT Label

2000 units per

EO70 box for

std option

375mm x 267mm x 375mm

Intermediate Box

333mm x 231mm x 183mm

Intermediate Box

Anti-static

Bubble Sheets

114mm x 102mm x 51mm

FSCINT
Label

Customized
Label

FSCINT
Label

Customized
Label

Immediate Box

530mm x 130mm x 83mm

FSCINT Label

©2001 Fairchild Semiconductor Corporation

Intermediate box

ustomized

C
Label

10,000 units maximum

per intermediate box

for std option

5 EO70 boxes per
intermediate Box

March 2001, Rev. B1

TO-92 Tape and Reel Data, continued

TO-92 Reeling Style
Configuration: Figure 2.0

Machine Option “A” (H)

Style “A”, D26Z, D70Z (s/h )

TO-92 Radial Ammo Packaging
Configuration: Figure 3.0

FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP

ORDER STYLE

D74Z (M)

Machine Option “E” (J)

Style “E”, D27 Z, D71 Z (s/ h)

FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM

ORDER STYLE

D75Z (P)

FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM

FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP

September 1999, Rev. B

TO-92 Tape and Reel Data, continued

TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0

P Pd

Ha

H1

HO

P1 F1

User Direc tion of Feed

TO-92 Reel
Configuration: Figure 5.0

Hd

b

d

L1

P2

PO

DO

S

L

W1

WO

ITEM DESCRIPTION

Base of Package to Lead Bend
Compon en t He ig ht
Lead Clinch Height
Compon en t Ba s e Heig ht
Compon en t Al ig nm e nt ( sid e/s id e )
Compon en t Al ig nm e nt ( fron t /b ac k )
Compon en t Pi tc h
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out

t

W2

W

t1

SYMBOL

b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S

DIMENSION

0.098 (m ax )

0.928 (+ /- 0.025)

0.630 (+ /- 0.020)

0.748 (+ /- 0.020)

0.040 (m ax )

0.031 (m ax )

0.500 (+ /- 0.020)

0.500 (+ /- 0.008)

0.150 (+ 0 .00 9, -0.010 )

0.247 (+ /- 0.007)

0.104 (+ /- 0 .010)

0.018 (+ 0 .00 2, -0.003 )

0.429 (m ax )

0.209 (+ 0 .05 1, -0.052 )

0.032 (+ /- 0.006)

0.021 (+ /- 0.006)

0.708 (+ 0 .02 0, -0.019 )

0.236 (+ /- 0.012)

0.035 (m ax )

0.360 (+ /- 0.025)

0.157 (+ 0 .00 8, -0.007 )

0.004 (m ax )

F63TNR Label

Customized Label

W2

ELECTROSTATIC

SENSITIVE DEVICES

D3

Note : All dimensions are in inches.

D4

D1

ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM

D2

W1

W3

Reel Diame t er D1 13.975 14.025
Arbor Hol e Di am et er ( Standar d) D2 1.160 1.200

Core Diameter D3 3.100 3.300
Hub Recess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0.570
Flange to Flange Inner Width W2 1.630 1.69 0
Hub to Hub Center Width W3 2.090

Note: All dimensions are inches

(Small Hole) D2 0.650 0.700

July 1999, Rev. A

TO-92 Package Dimensions

TO-92 (FS PKG Code 92, 94, 96)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.1977

©2000 Fairchild Semiconductor International

January 2000, Rev. B

SOT-23 Packaging
Configuration: Figure 1.0

Components

Leader Tape
500mm minimum or

125 empty pocket s

Trailer Tape
300mm minimum or

75 empty pocket s

SOT-23 Tape Leader and Trailer

Configuration: Figur e 2.0

Cover Tape

Carrier Tape

Note/Comments

Packaging Option

SOT-23 Packaging Information

Stan dard

(no flow code)

D87Z

Packaging type

Reel Size

TNR

7" Dia

TNR

13"

Qty per Reel/Tube /Bag

3,000 10,000

Box Dimensi on (mm )

187x107x183 343x34 3x64

Max qty per B o x

24,000 30,000

Weight per unit (gm)

0.0082 0.0082

Weight per Reel (kg)

0.1175 0.4006

Human readable
Label

Human Readable Label

Human Readable Label sample

343mm x 342mm x 64mm

Intermediate box for L87Z Option

187mm x 107mm x 183mm

Intermediate Box for Standard Option

SOT-23 Unit Orientation

3P 3P 3P 3P

Human Readable

Label

Custom ized Label

Embossed

Carrier Tape

Antistatic Cover Tape

Packaging Description:

SOT-23
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primaril y composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other opti ons are
described in the Packaging Information table.

These full reels are individually labeled and placed inside
a st andard intermediate made of recyclable corrugated
brown paper with a Fairchil d logo printi ng. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a label ed shipping box which
comes in diff erent sizes depending on the number of part s
shipped.

parts are shipped in tape. The carrier tape is

SOT-23 Tape and Reel Data

©2000 Fairchild Semiconductor International

September 1999, Rev. C

SOT-23 Tape and Reel Data, continued

SOT-23 Embossed Carrier Tape
Confi guration: Figure 3.0

T

B0

Wc

D0P0 P2

D1

E1

W

F

E2

Tc

K0

P1

A0

User Direction of Feed

Dimensions are in millimeter

Pkg type

SOT-23

(8mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SOT-23 Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

3.15

2.77

8.0

1.55

1.125

1.75

6.25

+/-0.10

+/-0.10

+/-0.3

+/-0.05

+/-0.125

+/-0.10

3.50

min

+/-0.05

rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum

B0

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

W1 Measured at Hub

A0

Sketch B (Top View)

Component Rotation

4.0
+/-0.1

Typical
component
cavity
center line

Typical
component
center line

Dim A

Max

4.0
+/-0.1

1.30

0.228
+/-0.013

5.2
+/-0.3

0.5mm
maximum

+/-0.10

0.5mm
maximum

Sketch C (Top View)

Component lateral movement

0.06
+/-0.02

Dim A

max

Tape Size

8mm 7" Dia

8mm 13" Dia

Reel

Option

Dim N

Diameter Option

7"

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

W3

Dim D

min

DETAIL AA

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00
330

1.5

0.059

1.5

512 +0.020/-0.008
13 +0.5/-0.2

512 +0.020/-0.008
13 +0.5/-0.2

0.795

2.165550.331 +0.059/-0.000

20.2

0.795

4.00

20.2

100

8.4 +1.5/0

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.567

14.4

0.311 – 0.429

7.9 – 10.9

0.311 – 0.429

7.9 – 10.9

September 1999, Rev. C

SOT-23 Package Dimensions

SOT-23 (FS PKG Code 49)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0082

©2000 Fairchild Semiconductor International

September 1998, Rev . A1

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not intended to be an exhaustive list of all such trademarks.

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TM

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FACT™
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

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

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QT Optoelectronics™

Quiet Series™
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

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PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G