Fairchild PN2369A, MMBT2369A service manual

PN2369A MMBT2369A

C

B

E

NPN Switching Transistor

This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.

TO-92

C

SOT-23

Mark: 1S

PN2369A / MMBT2369A

E

B

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

Collector-Emit t er Voltage 15 V Collector-Base Vo ltage 40 V Emitter-Base Voltage 4.5 V Collector Current - Continuous 200 mA Operating and Stora ge Junction Temperature Range -55 to +150

°

C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

PN2369A MMBT2369A*

P

D

R

JC

θ

R

JA

θ

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case 125 Thermal Resistance, Junction to Ambient 357 556

350

2.8

225

1.8

mW

mW/°C

C/W

°

C/W

°

 1997 Fairchild Semiconductor Corporation

µ

NPN Switching Transistor

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

sat

BE(

Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 15 V Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage

I

= 10 µA, VBE = 0

C

I

= 10 µA, IE = 0

C

I

= 10 µA, IC = 0

E

Collector Cu toff Current VCB = 20 V, IE = 0

V

= 20 V, IE = 0, TA = 125°C

CB

DC Current Gain* IC = 10 mA, VCE = 1.0 V

I

= 10 mA,V

C

= 100 mA, VCE = 1.0 V

I

Collector-Emitter S aturation Voltage* IC = 10 mA, IB = 1.0 mA

)

Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

)

C

= 10 mA, I

I

C

= 30 mA, IB = 3.0 mA

I

C

= 100 mA, IB = 10 mA

I

C

= 10 mA, I

I

C

I

= 10 mA, I

C

= 30 mA, IB = 3.0 mA

I

C

= 100 mA, IB = 10 mA

I

C

= 0.35 V,TA =-55°C

CE

= 1.0 mA,TA =125°C

B

= 1.0 mA,TA = -55°C

B

= 1.0 mA,TA= 125°C

B

40 V 40 V

4.5 V

0.4 30

40

120 20 20

0.2

0.3

0.25

0.5

0.7

0.85

1.02

0.59

1.15

1.6

PN2369A / MMBT2369A

A A

V V V V

V V V V V

SMALL SIGNAL CHARACTERISTICS

C

obo

C

ibo

h

fe

Output Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 5.0 pF Small-Signal Current Gain IC = 10 mA, VCE = 10 V,

R

= 2.0 kΩ, f = 100 MHz

G

5.0

SWITCHING CHARACTERISTICS

t

s

t

on

t

off

Storage Time IB1 = IB2 = IC = 10 mA 13 ns Turn-On Time VCC = 3.0 V, IC = 10 mA,

I

= 3.0 mA

B1

Turn-Off Time VCC = 3.0 V, IC = 10 mA,

I

= 3.0 mA, IB2 = 1.5 mA

B1

12 ns

18 ns

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model

NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2 Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p Itf=.3 Vtf=4 Xtf=4 Rb=10)

T ypical Characteristics

PN2369A / MMBT2369A

NPN Switching Transistor

(continued)

DC Current Gain

vs Col le c t or Curre nt

200

V = 1.0V

CE

150

125 °C

100

25 ° C

50

FE

h - DC CURRENT GAIN

0.01 0.1 1 10 100

I - CO LLE C TOR CU RRE N T (mA)

C

- 40 °C

Bas e-E mitter Sat ura ti o n

V o l t age vs Co llecto r Cur rent

1.4

1.2

1

0.8

0.6

0.4

BESAT

V - BASE-EMITTER VOLTAGE (V)

0.1 1 10 100 300

= 10

β

- 40 °C

25 °C

125 °C

I - COLLECTOR CURRENT (mA)

C

Collecto r-Emi tte r Satu rati on

V o lt age v s C ollec tor C ur rent

0.5

β

= 10

0.4

0.3

25 °C

0.2

- 40 °C

0.1

0

0.1 1 10 100 500

CESAT

V - COLLECTOR-EMITTER VOLTAGE (V)

I - COLLECTOR CURRENT (mA)

C

125 °C

Base-Emitter ON V oltage vs

Co llec tor Cur rent

1

0.8

0.6

0.4

0.2

BE(O N)

0.1 1 10 100

V - BASE-EMI TTER ON VOLTAG E ( V)

- 40°C 25 °C

125 °C

V = 1.0V

I - COLLECTOR CURRENT (mA)

C

CE

Collector-Cutoff Current vs Amb ient Tem perature

600

V = 20V

CB

100

10

CBO

I - COLLECTOR CURRENT (nA)

1

25 50 75 100 125 150

T - AMBIE NT TEMP E RATUR E ( C)

A

°

Typical Characteristics (continued)

PN2369A / MMBT2369A

NPN Switching Transistor

(continued)

Output Capacitance vs

Reverse Bias Voltage

5

4

C

ibo

3

C

obo

2

CAPACITANCE (pF)

1

0

0.1 0.5 1 5 10 50

REVERSE BIAS VOLTAGE (V)

F = 1.0MHz

Sw itchin g Tim es vs

Amb ient Tem perature

12

10

8

6

4

SWITCHING TIMES (ns)

2

I = 10 mA, I = 3.0 mA, I = 1 .5 mA, V = 3.0 V

C

0

25 50 75 100

B1

T - AMBIENT TE MPERATURE ( C)

A

t

s

f

t

s

t

s

d

t

s

r

B2

CC

°

Switching Times vs

Collector Current

100

50

20 10

5

SWITCHING TIMES (ns)

2 1

2 5 10 20 50 100 300

I - COLL EC TOR CURRENT (m A)

C

V = 3.0 V

CC

I = 10 I = I = 10

C

t

s

d

B1

B2

t

s

r

t

s

f

Storage Time vs Turn On

and Turn Off Base Currents

-12

I = 10 mA

C

V = 3.0 V

-10

CC

-8

-6

-4

-2

0

B2

I - TURN OFF BASE CURRENT (mA)

0246810

t = 3.0 ns

s

4.0 ns

6.0 ns

I - TURN ON BASE CURRENT (mA)

B1

Storage Time vs Turn On

and Turn Off Base Currents

-12

I = 10 mA

C

V = 3.0 V

-10

CC

-8

-6

-4

-2

0

B2

I - TURN OFF BASE CURRENT (m A)

0246810

t = 3.0 ns

s

4.0 ns

6.0 ns

I - TURN ON BASE CURR E NT (mA)

B1

Storage Time vs Turn On

and Turn Off Base Currents

-30

I = 100 mA

C

V = 3.0 V

CC

-25

t = 3.0 ns

S

-20

-15

-10

-5

0

B2

I - TURN OFF BASE CURRENT (m A)

0 5 10 15 20 25 30

I - TURN ON BASE CURRENT (mA)

B1

4.0 ns

6.0 ns

16.0 ns

8.0 ns

Typical Characteristics (continued)

PN2369A / MMBT2369A

NPN Switching Transistor

(continued)

Fall Time vs Turn On

and Turn Off Base Currents

-6

I = 10 mA

C

V = 3.0 V

-5

CC

-4

-3

-2

-1

0

B2

I - TURN OFF BASE CURRENT (m A)

0246810

t = 7.0 ns

f

I - TURN ON BASE CURR E NT (mA)

B1

8.0 ns

10 ns

Fall Time vs Turn On

and Turn Off Base Currents

-30

I = 100 mA

C

V = 3.0 V

-25

CC

-20

t = 2.0 ns

f

-15

-10

-5

0

B2

I - TURN OFF BASE CURRENT (mA)

0 5 10 15 20 25 30

I - TURN ON BASE CURRENT (mA)

B1

3.0 ns

4.0 ns

8.0 ns

12.0 ns

Fall Time v s Turn On

a nd Turn Off B ase C ur r en ts

-12

I = 30 mA

C

V = 3 .0 V

-10

CC

-8

t = 2.0 ns

f

-6

-4

-2

0

B2

I - TURN OFF BASE CURRENT (mA)

024681012

I - TURN ON BASE CURRENT (mA)

B1

3.0 ns

4.0 ns

5.0 ns

Delay Time vs Base-Emitter OFF

Vo ltage and Turn On Base Current

-6

I = 10 mA

C

V = 3.0 V

CC

-5

t = 8.0 ns

d

-4

-3

5.0 ns

-2

-1

0

BE(O)

12 51020 50

V - BASE-EMITTER OFF VOLTAG E (V)

I - TURN ON BASE CURRENT (mA)

B1

4.0 ns

3.0 ns

R is e Ti me vs . Turn On Bas e

Cu rre nt an d Co llec t or Cur re nt

50

V = 3.0 V

CC

t = 2.0 ns

10

r

5.0 ns

1

10 ns

0

B1

1 10 100 500

I - TURN ON BASE CURRENT (mA)

I - COLLECTOR CU RRENT (mA )

C

20 ns

Po w e r D is s ipa t ion vs

Amb ien t Tempe ratur e

500

400

TO-92

300

200

SOT-23

100

D

P - PO W ER DISSI PATION (mW)

0

0255075100125150

TE MPERATURE ( C )

°