Fairchild PN2222 service manual
General Purpose Transistor
PN2222
PN2222
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 600 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 1 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC=500mA, IB=50mA 2 V
V
BE
f
T
C
ob
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=10µA, IE=0 60 V
Collector Emitter Breakdown Voltage IC=10mA, IB=0 30 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
Collector Cut-off Current VCB=50V, IE=0 0.01 µA
Emitter Cut-off Current VEB=3V, IC=0 10 nA
DC Current Gain VCE=10V, IC=0.1mA
Current Gain Bandwidth Product VCE=20V , IC=20mA, f=100MHz 300 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=10V, *IC=150mA
V
CE
35
100 300
©2004 Fairchild Semiconductor Corporation Rev. A, November 2004
Package Dimensions
4.58
0.46
±0.10
+0.25
–0.15
PN2222
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, November 2004
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