
General Purpose Transistor
PN2222
PN2222
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 600 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 1 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC=500mA, IB=50mA 2 V
V
BE
f
T
C
ob
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=10µA, IE=0 60 V
Collector Emitter Breakdown Voltage IC=10mA, IB=0 30 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
Collector Cut-off Current VCB=50V, IE=0 0.01 µA
Emitter Cut-off Current VEB=3V, IC=0 10 nA
DC Current Gain VCE=10V, IC=0.1mA
Current Gain Bandwidth Product VCE=20V , IC=20mA, f=100MHz 300 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=10V, *IC=150mA
V
CE
35
100 300
©2004 Fairchild Semiconductor Corporation Rev. A, November 2004

Package Dimensions
4.58
0.46
±0.10
+0.25
–0.15
PN2222
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, November 2004

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As used herein:
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2004 Fairchild Semiconductor Corporation
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13