Fairchild NZT753 service manual

NZT753

NZT753

PNP Current Driver Transistor

• This device is designed for power amplifier, regulator and switching

4

circuits where speed is important. Sourced from Process 5P.

2

1

SOT-223

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings* T

=25°C unless otherwise noted

A

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

, T

T

J

STG

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics

Symbol Parameter Test Conditions Min. Max. Units

Off Characteristics

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

On Characteristics *

h

FE

(sat) Collector-Emitter Sa turation Volt age IC = -1.0A, IC = -50mA -0.3 V

V

CE

(sat) Base-Emitter Saturation Voltage IC = -1.0A, IB = -100mA -1.25 V

V

BE

(on) Base-Emitter On Voltage VCE = -2.0V, IC = -1.0A, -1.0 V

V

BE

Small Signal Ch ar ac t e ris t ic s

f

T

*Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Collector-Emitter Voltage - 100 V
Collector-Base Voltage - 120 V
Emitter-Base Voltage - 5.0 V
Collector Current - Continuous - 4.0 A
Operating and Storage Junction Temperature Range - 55 ~ +150 °C

TA=25°C unless otherwise noted

Collector-Emitter Breakdown Vol tage IC = -10mA, IB = 0 -100 V
Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -120 V
Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5.0 V
Collector-Base Cutoff Current VCB = -100V, IE = 0

Emitter-Base Cutoff Current VEB = -4V, IC = 0 -0.1 µA

DC Current Gain VCE = -2.0V, IC = -50mA

Transition Frequency VCE = -5V, IC = -100mA, f = 100MHz 75 MHz

= 100°C

T

A

= -2.0V, IC = -500mA

V

CE

= -2.0V, IC = -1.0A

V

CE

70

100

55

-0.1

-10

300

3

µA
µA

Thermal Characteristics *

TA=25°C unless otherwise noted

Symbol Parameter Max. Units

P

D

Total Device Dissipation
Derate above 25C

R

θJA

* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min 6cm2.

©2003 Fairchild Semiconductor Corporation Rev. A, April 2003

Thermal Resistance, Junction to Ambient 103 °C/W

1.2

9.7

W

mW/°C

Package Dimensions

SOT-223

3.00

±0.10

MAX1.80

±0.20

1.75

±0.20

0.08MAX

+0.04

0.06

–0.02

NZT753

±0.20

0.65

±0.30

2.30 TYP

(0.95) (0.95)

±0.20

(0.46)

(0.89)

1.60

4.60

6.50

±0.25

±0.20

0.70

±0.10

3.50
(0.60) (0.60)

0.25

+0.10
–0.05

7.00

0°~10°

Dimensions in Millimeters

Rev. A, April 2003©2003 Fairchild Semiconductor Corporation