Fairchild MMPQ6700 service manual
MMPQ6700
B1
E1
SOIC-16
Mark: MMPQ6700
C1 B1 E1 & C2 B2 E2 NPN
C3 B3 E3 & C4 B4 E4 PNP
E4
B3
E3
B2
E2
C1
pin #1
TRANSISTOR TYPE
C1
B4
C2
C2
C3
C3
C4
MMPQ6700
C4
Quad NPN & PNP General Purpose Amplifier
These complementary devices can be used in switches with collector currents of 10 µA to
100 mA. These devices are best used when space is the primary consideration. Sourced
from Process 23 & 66. See 2N3904 (NPN) & 2N3906 (PNP) for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
P
D
R
JA
θ
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Emitter-Base V ol tage 5.0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°
MMPQ6700
Total Device Dissipation
Derate above 25°C
1000
8.0
mW
mW/°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
125
240
°
°
C
C/W
C/W
4
1997 Fairchild Semiconductor Corporation
Quad NPN & PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown
IC = 10 mA, IB = 0 40 V
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base B reak down Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
40 V
5.0 V
Collector-Cutoff Current VCB = 30 V, IE = 0 50 nA
Emitter-Cutoff Current VEB = 4.0 V, IC = 0 50 nA
DC Current Gain VCE = 1.0 V, IC = 0.1 mA
= 1.0 V, IC = 1.0 mA
V
CE
= 1.0 V, IC = 10 mA
V
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.25 V
)
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.90 V
)
CE
30
50
70
MMPQ6700
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
f
T
Output Capacitance VCB = 5.0 V, f = 100 kHz 4.5 pF
Input Capacitance
Current-Gain Bandwidth Product IC = 10 mA, VCE = 20 V,
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
= 0.5 V, f = 100 kHz
V
BE
V
= 0.5 V, f = 100 kHz
BE
f = 100 MHz
PNP
NPN
10
8.0
pF
pF
200 MHz
Loading...