Fairchild MMPQ2907 service manual
MMPQ2907
B4
E4
B3
E3
B2
E2
B1
E1
SOIC-16
pin #1
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
C1
C1
C2
C2
C3
C3
C4
MMPQ2907
C4
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 40 V
Collector-Base Voltage 60 V
Emitter-Base V oltage 5.0 V
Collector Current - Continuous 600 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MMPQ2907
P
D
R
θJA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junct i on to Ambient
Effective 4 Die
Each Die
1,000
8.0
125
240
2
.
mW
mW/°C
°
C/W
°
C/W
°
C/W
2001 Fairchild Semiconductor Corporation MMPQ2907, Rev A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
EBO
I
CBO
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
Collector-Emit ter Breakdown
IC = 10 mA, IB = 0 40 V
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base B reakdown Voltage
= 10 µA, IE = 0
I
C
= 10 µA, IC = 0
I
E
60 V
5.0 V
Emitter Cutoff Current VEB = 30 V 50 nA
Collector Cutoff Current VCB = 30 V 50 nA
DC Current Gain IC = 10 mA, VCE = 10 V
= 150 mA, VCE = 10 V*
I
C
I
= 300 mA, VCE = 10 V
C
= 500 mA, VCE = 10 V*
I
Collector-Emit ter Saturation
Voltage*
C
IC = 150 mA, IB = 15 mA
= 300 mA, IB = 30 mA
I
C
Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*
I
= 300 mA, IB = 30 mA
C
75
100
30
50
300
0.4
1.6
1.3
2.6
V
V
V
V
MMPQ2907
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
T ypical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
400
125 °C
300
25 °C
200
100
- 40 °C
0
E
0.1 0.3 1 3 10 30 100 300
F
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
- COLLECTOR EMITTER VOLTAGE (V)
T
A
S
E
C
0.5
0.4
0.3
0.2
0.1
= 10
ββββ
25 °C
125 ºC
0
110100500
I - COLLECTOR CURRENT (mA)
C
- 40 ºC
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.1 1 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=1 1 1.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
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