Fairchild MMPQ2222 service manual
MMPQ2222
B4
NPN Multi-Chip General Purpose Amplifier
• This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
• Sourced from process 19.
Absolute Maximum Ratings *
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Collector-Emitter Voltage 30 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range - 55 ~ +155 °C
B1
E1
E4
B3
E3
B2
E2
C3
C2
C2
C1
C1
SOIC-16
Mark: MMPQ2222
MMPQ2222
C4
C4
C3
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 30 V
Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V
Emitter-Base Breakdown Voltage IC = 10µA, IC = 0 5.0 V
Collector Cutoff Current V
= 50V, IE = 0 50 nA
CB
Emitter Cutoff Current VEB= 3.0V, IC = 0 50 nA
On Characteristics *
h
FE
V
CE(sat)
V
BE(sat)
DC Current Gain IC = 10mA, V
= 150mA, V
I
C
= 150mA, V
I
C
CE
CE
CE
= 10V
= 1.0V *
= 1.0V *
Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA
I
= 500mA, IB = 50mA
C
Base-Emitter Saturation Voltage * IC = 150mA, IB = 15mA
= 500mA, IB = 50mA
I
C
75
100
50
0.4
1.6
1.3
2.6
Small Signal Characteristics
f
T
Current GAin Bandwidth Product IC = 20mA, V
CE
= 20V,
300 MHz
f = 100MHz
C
obo
C
ibo
Output Capacitance V
Input Capacitance V
NF Noise Figure I
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
= 10V, IE = 0, f = 100kHz 4.0 pF
CB
= 0.5V, IE = 0, f = 100kHz 20 pF
EB
= 100µA, V
C
= 1.0kΩ, f = 1.0kHz
R
S
CE
= 10V,
2.0 dB
V
V
V
V
©2004 Fairchild Semiconductor Corporation Rev. A, October 2004
MMPQ2222
Thermal Characteristics
Symbol Parameter Max. Units
P
D
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
Ta=25°C unless otherwise noted
1000
8.0
125
240
mW
mW/°C
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation Rev. A, October 2004
Typical Characteristics
β
Voltage vs Collector Current
1 10 100 500
0.1
0.2
0.3
0.4
I - COLLEC TO R CU RRENT (m A)
V - COLLECTOR- E MI TTER VOLT AGE (V)
CES AT
25 °C
C
β
= 10
125 °C
- 40 °C
β
β
Collector Current
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON )
C
V = 5V
CE
25 °C
125 °C
- 40 °C
β
β
β
0.1 1 10 100
4
8
12
16
20
REVERS E BIA S VOLTA GE (V )
CAPACITANCE (pF)
f = 1 MHz
C
ob
C
te
vs Collect or Current
500
400
125 °C
300
200
25 °C
h - TYPI CAL PULSED CURREN T GAI N
100
FE
- 40 °C
0
0.1 0.3 1 3 10 30 100 300
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
MMPQ2222
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Voltage vs Collector Current
β = 10
1
- 40 °C
0.8
0.6
25 °C
125 °C
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
0.4
BESAT
V - BASE-EMITTER VOLTAGE (V)
1 10 100 500
I - COLLECTOR CURRENT (mA)
C
Figure 3. Base-Emitter Saturation Voltage
500
100
10
vs Collector Current
V = 40V
CB
Figure 4. Base-Emitter On Voltage
vs Collector Current
1
0.1
CBO
I - COLLECT OR CURRE NT (nA)
25 50 75 100 125 150
©2004 Fairchild Semiconductor Corporation Rev. A, October 2004
T - AMBIEN T TE M P ERATUR E ( C)
A
Figure 5. Collector Cutoff Current
vs Ambient Temperature
°
Figure 6. Emitter Transition and Output Capacitance
vs Reverse Bias Voltage
Loading...