Fairchild MMBTA13 service manual
MMBTA13
NPN Darlington Transistor
• This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics.
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Mark: 1M
MMBTA13 NPN Darlington Transistor
January 2005
Absolute Maximum Ratings
Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
T
, T
J
STG
Electrical Characteristics
Collector-Emitter Voltage 30 V
Collector-Base Voltage 30 V
Emitter-Base Voltage 10 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CES
I
CBO
I
EBO
On Characteristics *
h
FE
V
CE (sat)
V
BE (on)
Small Signal Characteristics
f
T
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Emitter Breakdown Voltage IC = 100µA, IB = 0 30 V
Collector-Cutoff Current V
Emitter-Cutoff Current V
DC Current Gain V
= 30V, IE = 0 100 nA
CB
= 10V, IC = 0 100 nA
EB
= 5.0V, IC =10mA
CE
V
= 5.0, IC = 100mA
CE
5,000
10,000
Collector-Emitter Saturation Voltage IC = 100mA, IB = 0.1mA 1.5 V
Base-Emitter On Voltage IC = 100mA,V
Current Gain Bandwidth Product IC = 10mA, V
= 5.0V 2.0 V
CE
= 10V, f = 100MHz 125 pF
CE
©2005 Fairchild Semiconductor Corporation
MMBTA13 Rev. B
1
www.fairchildsemi.com
MMBTA13 NPN Darlington Transistor
Thermal Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case °C/W
Thermal Resistance, Junction to Ambient 357 °C/W
350
2.8
mW
mW/°C
MMBTA13 Rev. B
2
www.fairchildsemi.com
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