Fairchild MMBT6428 service manual
MMBT6428
NPN General Purpose Amplifier
• This device designed for general pupose amplifier applications at
collector currents to 300mA
• Sourced from process 10.
Absolute Maximum Ratings*
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
I
C
, T
T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
Collector-Emitter Voltage 50 V
Collector-Base Voltage 60 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
3
1
1. Base 2. Emitter 3. Collector
MMBT6428
2
SOT-23
Mark: 1K
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
I
CEO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 50 V
Collector-Base BreakdownVoltage IC = 100µA, IE = 0 60 V
Collector Cut-off Current VCE = 30V, IB = 0 0.1 µA
Collector Cut-off Current VCB = 30V, IE = 0 10 nA
Emitter Cut-off Current VEB = 5.0V, IB = 0 10 nA
On Characteristics
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA
V
CE
V
(on) Base-Emitter On Voltage V
BE
DC Current Gain VCE = 5.0V, IC = 10µA
= 5.0V, IC = 100µA
V
CE
= 5.0V, IC = 1.0mA
V
CE
V
= 5.0V, IC = 10mA
CE
= 100mA, IB = 5.0mA
I
C
= 5.0V, IC = 1.0mA 0.56 0.66 V
CE
250
250
250
250
650
0.2
0.6
Small Signal Characteristics
f
T
C
obo
C
ibo
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Current gain Bandwidth Product V
= 5.0V, IC = 1.0mA,
CE
f = 100MHz
100 700 MHz
Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 3.0 pF
Input Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz 8.0 pF
V
©2002 Fairchild Semiconductor Corporation Rev. A, October 2002
MMBT6428
Thermal Characteristics T
=25°C unless otherwise noted
A
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total Device Dissipation
Derate above 25°C
350
2.8
Thermal Resistance, Junction to Case °C/W
Thermal Resistance, Junction to Ambient 357 °C/W
mW
mW/°C
©2002 Fairchild Semiconductor Corporation Rev. A, October 2002
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