Fairchild MMBT5551, 2N5551 Schematic [ru]
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2N5551- MMBT5551
NPN General Purpose Amplifier
Features
• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
• Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : I
= 10mA, VCE = 5.0V)
C
2N5551- MMBT5551 NPN General Purpose Amplifier
April 2006
2N5551
TO-92
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
1. Base 2. Emitter 3. Collector
MMBT5551
3
SOT-23
1
Marking: 3S
2
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 160 V
Collector-Base Voltage 180 V
Emitter-Base Voltage 6.0 V
Collector current - Continuous 600 mA
Junction and Storage Temperature -55 ~ +150 °C
Thermal Characteristics T
=25°C unless otherwise noted
a
Max
Symbol Parameter
P
D
R
θJA
R
θJA
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
2N5551- MMBT5551 Rev. B
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 357 °C/W
2N5551 *MMBT5551
625
5.0
350
2.8
Units
mW
mW/°C
2N5551- MMBT5551 NPN General Purpose Amplifier
Electrical Characteristics T
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
On Characteristics
h
FE
V
CE(sat)
V
BE(sat)
Small Signal Characteristics
f
T
C
obo
C
ibo
H
fe
NF Noise Figure IC = 250 uA, VCE = 5.0 V,
Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 160 V
Collector-Base Breakdown Voltage IC = 100µA, IE = 0 180 V
Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 6.0 V
Collector Cutoff Current VCB = 120V, IE = 0
VCB = 120V, IE = 0, Ta = 100°C
50
50
Emitter Cutoff Current VEB = 4.0V, IC = 0 50 nA
DC Current Gain IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter On Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Current Gain Bandwidth Product IC = 10mA, VCE = 10V,
80
80
250
30
0.15
0.20
1.0
1.0
100 300 MHz
f = 100MHz
Output Capacitance V
= 10V, IE = 0, f = 1.0MHz 6.0 pF
CB
Input Capacitance VBE = 0.5V, IC = 0, f = 1.0MHz 20 pF
Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, f = 1.0kHz 50 250
8.0 dB
RS=1.0 kΩ, f=10 Hz to 15.7 kHz
nA
µA
V
V
V
V
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1
Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m
Vtf=5 Xtf=8 Rb=10)
2N5551- MMBT5551 Rev. B
2 www.fairchildsemi.com
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