Fairchild MMBT5550 service manual
MMBT5550
NPN General Purpose Amplifier
• This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
3
2
SOT-23
1
Marking: 1F
1. Base 2. Emitter 3. Collector
MMBT5550 NPN General Purpose Amplifier
August 2005
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
Collector-Emitter Voltage 140 V
Collector-Base Voltage 160 V
Emitter-Base Voltage 6.0 V
Collector current - Continuous 600 mA
Junction and Storage Temperature -55 ~ +150 °C
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
On Characteristics
h
FE
V
CE(sat)
V
BE(sat)
Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 140 V
Collector-Base Breakdown Voltage IC = 100µA, IE = 0 160 V
Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 6.0 V
Collector Cutoff Current VCB = 100V, IE = 0
V
= 100V, IE = 0, Ta = 100°C
CB
100
100
Emitter Cutoff Current VEB = 4.0V, IC = 0 50 nA
DC Current Gain IC = 1.0mA, VCE = 5.0V
I
= 10mA, VCE = 5.0V
C
I
= 50mA, VCE = 5.0V
C
Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
I
= 50mA, IB = 5.0mA
C
Base-Emitter On Voltage IC = 10mA, IB = 1.0mA
I
= 50mA, IB = 5.0mA
C
60
60
20
250
0.15
0.25
1.0
1.2
nA
µA
V
V
V
V
©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
MMBT5550 Rev. A
MMBT5550 NPN General Purpose Amplifier
Electrical Characteristics T
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
Small Signal Characteristics
f
T
C
obo
C
ibo
Current Gain Bandwidth Product IC = 10mA, VCE = 10V,
Output Capacitance V
Input Capacitance VBE = 0.5V, IC = 0, f = 1.0MHz 30 pF
Thermal Characteristics T
f = 100MHz
CB
=25°C unless otherwise noted
a
= 10V, IE = 0, f = 1.0MHz 6.0 pF
50 MHz
Symbol Parameter Max. Units
P
D
R
θJA
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 357 °C/W
350
2.8
mW
mW/°C
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
1F MMBT5550 SOT-23 7” -- 3,000
MMBT5550 Rev. A
2 www.fairchildsemi.com
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