Fairchild 2N5088, 2N5089, MMBT5088, MMBT5089 datasheet

g

A

2N5088 / MMBT5088 / 2N5089 / MMBT5089

2N5088 2N5089

C

B

E

TO-92

MMBT5088 MMBT5089

C

SOT-23

Mark: 1Q / 1R

B

E

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

st

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter Voltage Collector-Base Voltage

Emitter-Base Voltage 4.5 V Collector Current - Continuous 100 mA Operating and Stora ge Junction Temperature Range -55 to +150

2N5088 2N5089 2N5088 2N5089

30 25 35 30

V V V V

°

C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N5088 2N5089

P

D

R

θ

JC

R

θ

J

Total Device Dissipa tion

Derate above 25°C

Ther mal Resistance, Junction to Case 83.3 Thermal Resistance, Junction to Ambient 200 357

625

5.0

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 2001 Fairchild Semiconductor Corporation

*MMBT5088 *MMBT5089

350

2.8

2N5088/2N5089/MMBT5088/MMBT5089, Rev A

mW

mW/°C

C/W

°

C/W

°

NPN General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

ON CHARACTERISTICS

h

FE

V

CE(

sat

V

BE(on)

Collector-Emitter Breakdown Voltage*

Collector-Base Breakdown Voltage

Collector Cutoff Current

I

= 1.0 mA, IB = 0 5088

C

I

= 100 µA, IE = 0 5088

C

V

= 20 V, IE = 0 5088

CB

= 15 V, IE = 0

V

CB

5089

30 25

35 30

Emitter Cutoff Current VEB = 3.0 V, IC = 0

V

= 4.5 V, IC = 0

EB

DC Current Gain

I

= 100 µA, VCE = 5.0 V 5088

C

5089

I

= 1.0 mA, VCE = 5.0 V 5088

C

5089

= 10 mA, VCE = 5.0 V* 5088

I

C

5089

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V

)

300 400 350 450 300 400

Base-Emitt er On Vo ltage IC = 10 mA, VCE = 5.0 V 0.8 V

50 50

50

100

900

1200

V V

nA nA

2N5088 / MMBT5088 / 2N5089 / MMBT5089

SMALL SIGNAL CHARACTERISTICS

f

T

C

cb

C

eb

h

fe

Current Gain - Bandwidth Product Collector-Base Capacitance VCB = 5.0 V, I

Emitter-Base Capacit anc e VBE = 0.5 V, I Small-Signal Current Gain

NF Noise Figure

= 500 µA,V

I

C

= 5.0 mA,

CE

f = 20 MHz

= 0, f = 100 kHz 4.0 pF

E

= 0, f = 100 kHz 10 pF

C

I

= 1.0 mA, V

C

= 5.0 V, 5088

CE

f = 1.0 kHz 5089

= 100 µA, VCE = 5.0 V, 5088

I

C

= 10 kΩ, 5089

R

S

f = 10 Hz to 15.7 kHz

50 MHz

350 450

1400 1800

3.0

2.0

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model

NPN (Is=5.911f Xti=3 Eg=1.11 V af=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10)

3

dB dB

T ypical Characteristics

2N5088 / MMBT5088 / 2N5089 / MMBT5089

NPN General Purpose Amplifier

(continued)

T ypic al Puls e d C u rrent Ga in

vs Collect or Current

1200

1000

800

600

400

200

0

FE

0.01 0.03 0.1 0.3 1 3 10 30 100

h - TYPICAL PULSED CUR RENT GAIN

125 °C

25 °C

I - COLLECTOR CURRENT (mA)

C

- 40 °C

V = 5.0 V

CE

Base-Emitter Saturation

Voltage vs Collector Cur rent

1

0.8

0.6

0.4

0.2

0.1 1 10 100

BESAT

V - COLLECTOR- EM ITT ER VO LTA GE (V)

- 40 °C

25 °C

125 °C

β

I - COLLECT OR CURRENT (mA)

C

= 10

Collector-Emitter Sat urati on Voltage vs Collector Curr en t

0.3

0.25

= 10

β

0.2

0.15

0.1

0.05

0.1 1 10 100

CESAT

V - COLLECTOR-EMITTER VOLTAGE (V)

I - COLLECTOR CURRENT (mA)

C

25 °C

125 °C

- 40 °C

Base-Emitter ON Voltage vs

Collector Current

1

0.8

0.6

0.4

0.2

BEON

0.1 1 10 40

V - BASE-EMITTER ON VOLTAGE (V)

- 40 °C 25 °C

125 °C

V = 5.0 V

CE

I - COLLECTOR CURRENT (m A)

C

Co llector-C u to ff Cur re nt

vs Ambie nt Temp er ature

10

V = 45V

CB

1

CBO

I - C OLLE CT O R CURRENT (nA)

0.1 25 50 75 100 125 150

T - A M BI E NT TE MP ERATURE ( C)

A

°

Typical Characteristics (continued)

2N5088 / MMBT5088 / 2N5089 / MMBT5089

NPN General Purpose Amplifier

(continued)

Input and Output Capacitance

vs Reverse Bias Voltage

5

4

3

C

te

2

CAPACITANCE (pF)

1

0

048121620

REVERSE BIAS VOLTAGE (V)

f = 1.0 MHz

C

ob

Normalized Collector-Cutoff Current

°

A

CHARACTERIS TIC S RELATIVE TO VALUE AT T = 25 C

1000

vs Amb ie nt Temp er atu re

100

10

1

25 50 75 100 125 150

T - AMBIENT TEMPERATURE ( C)

A

°

Contours of Constant Gain

Bandwi dt h Prod uc t (f )

10

7 5

3

2

CE

V - COLLECTOR VOLTAGE (V)

1

0.1 1 10 100

I - COLLEC T OR CURRENT (mA)

C

150 MH z

125 MH z 100 MH z

75 MHz

T

175 MH z

Wideband Noise Frequency

vs Source Resistance

5

4

3

2

1

NF - NOI S E FI GURE (d B)

0

1,000 2,000 5,000 10,000 20,000 50,000 100,000

V = 5.0 V

CE

BANDWI DT H = 1 5.7 kH z

I = 100 µA

C

R - SOURCE RESIST ANCE ( )

S

I = 30 µA

C

I = 10 µA

C

Ω

3

Noise Figure vs Frequency

10

I = 200 µA,

C

8

6

4

2

NF - NOISE FIGURE (dB)

0

0.0001 0.001 0.01 0.1 1 10 100

R = 10 k

I = 100 µA,

C

R = 10 k

S

I = 1.0 mA,

C

R = 500

S

I = 1.0 mA,

C

R = 5.0 k

S

f - FREQU ENCY (M Hz)

Ω

S

Ω

V = 5.0V

CE

Power Dissipation vs

Ambient Temperature

625

500

SOT-23

375

250

125

D

P - POW ER DISSIPATION (mW)

0

0 25 50 75 100 125 150

TO-92

TEMPERATURE ( C)

o

Typical Characteristics (continued)

2N5088 / MMBT5088 / 2N5089 / MMBT5089

NPN General Purpose Amplifier

(continued)

Cont ours of Co ns tant

Narrow Band Noise Figure

10,000

Ω

5,000

2,000

1,000

500

V = 5. 0 V

CE

f = 100 Hz BANDWIDTH

200

= 20 Hz

S

R - SOURC E RESISTANCE ( )

100

1 10 100 1,000

I - COLLECTOR CURRENT ( A)

C

3.0 dB

4.0 dB

6.0 dB

8.0 dB 10 dB

12 dB

14 dB

Contours of Constant

Nar r ow Band No is e Figure

10000

Ω

5000

2000 1000

500

V = 5.0V

CE

f = 10kHz

200

BANDWIDTH

S

= 2.0kHz

R - SOURCE RESISTANCE ( )

100

1 10 100 1000

I - COLL ECTO R CURR ENT ( A)

C

1.0 dB

2.0 dB

µ

3.0 dB

4.0 dB

6.0 dB

8.0 dB

Contours of Consta n t

Narrow Band Noise Figure

10,000

Ω

5,000

2,000

1,000

500

V = 5.0 V

CE

f = 1.0 kHz BANDWIDTH

200

= 200 Hz

S

R - SOURCE RESISTANCE ( )

100

1 10 100 1,000

I - COLLECTOR CURRENT ( A)

C

2.0 dB

3.0 dB

4.0 dB

6.0 dB

8.0 dB

Contours of Constant

Nar row B and No ise Fi gure

10000

Ω

5000

2000 1000

V =

CE

500

5.0V f = 1.0 MHz

200

BANDW IDTH

S

= 200kHz

R - SOURCE RESISTANCE ( )

100

0.01 0.1 1 10

I - COLLEC TO R CU RRENT ( A)

C

2.0 dB

3.0 dB

4.0 dB

8.0 dB

µ

7.0 dB

µ

5.0 dB

6.0 dB

Fairchild 2N5088, 2N5089, MMBT5088, MMBT5089 datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual