Fairchild MMBT4403, 2N4403, 2N4403, MMBT4403 Schematic

2N4403 / MMBT4403

2N4403

C

B

E

TO-92

MMBT4403

C

E

SOT-23

Mark: 2T

B

PNP General Purpose Amplifier

This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter Voltage 40 V Collector-Base Voltage40V Emitter-Base V ol tage 5.0 V Collector Current - Continuous600mA Operating and Storage Junction Temperature Range -55 to +150

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N4403 *MMBT4403

P

D

R

θ

JC

R

θ

JA

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 2001 Fairchild Semiconductor Corporation

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case 83.3 Thermal Resistance, Junction to Ambient 200 357

625

5.0

350

2.8

mW

mW/°C

°C/W °C/W

2N4403/MMBT4403, Rev. C

PNP General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BEX

I

CEX

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

sat

BE(

Collector-Emitter Breakdown

IC = 1.0 mA, IB = 040V Voltage* Collector-Base Breakdown VoltageIC = 0.1 mA, IE = 040V

Emitter-Base B reakdown Voltage IE = 0.1 A, IC = 0 5.0 V Base Cutoff Current VCE = 35 V, V Collector Cutoff Current VCE = 35 V, V

DC Current Gain IC = 0.1 mA, VCE = 1.0 V

= 1.0 mA, VCE = 1.0 V

I

C

= 10 mA, VCE = 1.0 V

I

C

= 150 mA, VCE = 2.0 V*

I

C

= 500 mA, VCE = 2.0 V*

I Collector-Emitter Saturation

)

Voltage* Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*

)

C

IC = 150 mA, IB = 15 mA

= 500 mA, IB = 50 mA

I

C

= 500 mA, IB = 50 mA

I

C

= 0.4 V 0.1

EB

= 0.4 V 0.1

BE

30

60 100 100

20

0.75 0.95

300

0.4

0.75

1.3

µA µA

V V V V

2N4403 / MMBT4403

SMALL SIGNAL CHARACTERISTICS

f

T

C

cb

C

eb

h

ie

h

re

h

fe

h

oe

Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V, Collector-Base Capacitance VCB = 10 V, IE = 0, Emitter-Base Capac i tance VBE = 0.5 V, IC = 0, Input Impedance IC = 1.0 mA, VCE = 10 V, Voltage Feedback Ratio IC = 1.0 mA, VCE = 10 V, Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, Output Admittanc e IC = 1.0 mA, VCE = 10 V,

SWITCHING CHARACTERISTICS

t

d

t

r

t

s

t

f

Delay Time VCC = 30 V, IC = 150 mA, 15 ns Rise Time IB1 = 15 mA 20 ns Storage TimeVCC = 30 V, IC = 150 mA225ns Fall Time IB1 = IB2 = 15 mA 30 ns

*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%

f = 100 MHz f = 140 kHz f = 140 kHz f = 1.0 kHz f = 1.0 kHz f = 1.0 kHz f = 1.0 kHz

200 MHz

8.5 pF 30 pF

1.5 15

0.1 8.0

kΩ

x 10

60 500

1.0 100

µmhos

-4

T ypical Characteristics

2N4403 / MMBT4403

PNP General Purpose Amplifier

(continued)

Typical Pulsed Current Gain

vs Collector Current

500

400

125 °C

300

25 °C

- 40 °C

0

0.1 0.3 1 3 10 30 100 300

I - COLLECTOR CURRENT (mA)

C

h - TYPICAL PULSED CURRENT GAIN

200

100

FE

V = 5V

CE

Bas e-Em itt er Satur ati on

Voltag e vs C o ll ector Cur re nt

1

- 40 °C

0.8

0.6

0.4

0.2

BESAT

0

V - BASE EMITTE R VOLTAGE (V)

110100500

25 °C

125 °C

I - COLLEC TOR CURRENT (mA)

C

β

= 10

Co llector-Emitt er Saturati o n Voltag e vs C o ll ector Cur re nt

0.5

0.4

0.3

0.2

0.1

CESAT

V - COLLECTOR EM I TTER VOLTAGE (V)

= 10

β

25 °C

125 °C

0

110100500

I - COLLECTOR CUR RENT (mA)

C

- 40 °C

Base Emitter ON Voltage vs

Co ll ector Current

1

0.8

0.6

0.4

0.2

0

BE( ON)

V - BASE EMITTER ON VOLTAGE (V)

- 40 °C

25 °C

125°C

V = 5V

CE

0.1 1 10 25

I - COLLECTOR CURRENT (mA)

C

Co llect or-Cu to ff Curre nt

vs Amb ie nt Temp er ature

100

V = 35V

CB

10

1

0.1

CBO

I - COLLECTOR CU RREN T (nA)

0.01 25 50 75 100 125

T - A MBIE NT T EMP E R ATUR E ( C)

A

°

Input and Output Capacitance

vs Reverse Bias Voltage

20

16

12

8

CAPACITANCE (pF)

4

0

0.1 1 10 50

REVERSE BIAS VOLTAGE (V)

C

ib

C

ob

Fairchild MMBT4403, 2N4403, 2N4403, MMBT4403 Schematic [ru]