2N4403 / MMBT4403
2N4403
C
B
E
TO-92
MMBT4403
C
E
SOT-23
Mark: 2T
B
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 40 V
Collector-Base Voltage40V
Emitter-Base V ol tage 5.0 V
Collector Current - Continuous600mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N4403 *MMBT4403
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357
625
5.0
350
2.8
mW
mW/°C
°C/W
°C/W
2N4403/MMBT4403, Rev. C
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BEX
I
CEX
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown
IC = 1.0 mA, IB = 040V
Voltage*
Collector-Base Breakdown VoltageIC = 0.1 mA, IE = 040V
Emitter-Base B reakdown Voltage IE = 0.1 A, IC = 0 5.0 V
Base Cutoff Current VCE = 35 V, V
Collector Cutoff Current VCE = 35 V, V
DC Current Gain IC = 0.1 mA, VCE = 1.0 V
= 1.0 mA, VCE = 1.0 V
I
C
= 10 mA, VCE = 1.0 V
I
C
= 150 mA, VCE = 2.0 V*
I
C
= 500 mA, VCE = 2.0 V*
I
Collector-Emitter Saturation
)
Voltage*
Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*
)
C
IC = 150 mA, IB = 15 mA
= 500 mA, IB = 50 mA
I
C
= 500 mA, IB = 50 mA
I
C
= 0.4 V 0.1
EB
= 0.4 V 0.1
BE
30
60
100
100
20
0.75 0.95
300
0.4
0.75
1.3
µA
µA
V
V
V
V
2N4403 / MMBT4403
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V,
Collector-Base Capacitance VCB = 10 V, IE = 0,
Emitter-Base Capac i tance VBE = 0.5 V, IC = 0,
Input Impedance IC = 1.0 mA, VCE = 10 V,
Voltage Feedback Ratio IC = 1.0 mA, VCE = 10 V,
Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V,
Output Admittanc e IC = 1.0 mA, VCE = 10 V,
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time VCC = 30 V, IC = 150 mA, 15 ns
Rise Time IB1 = 15 mA 20 ns
Storage TimeVCC = 30 V, IC = 150 mA225ns
Fall Time IB1 = IB2 = 15 mA 30 ns
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
f = 100 MHz
f = 140 kHz
f = 140 kHz
f = 1.0 kHz
f = 1.0 kHz
f = 1.0 kHz
f = 1.0 kHz
200 MHz
8.5 pF
30 pF
1.5 15
0.1 8.0
kΩ
x 10
60 500
1.0 100
µmhos
-4
T ypical Characteristics
2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
500
400
125 °C
300
25 °C
- 40 °C
0
0.1 0.3 1 3 10 30 100 300
I - COLLECTOR CURRENT (mA)
C
h - TYPICAL PULSED CURRENT GAIN
200
100
FE
V = 5V
CE
Bas e-Em itt er Satur ati on
Voltag e vs C o ll ector Cur re nt
1
- 40 °C
0.8
0.6
0.4
0.2
BESAT
0
V - BASE EMITTE R VOLTAGE (V)
110100500
25 °C
125 °C
I - COLLEC TOR CURRENT (mA)
C
β
= 10
Co llector-Emitt er Saturati o n
Voltag e vs C o ll ector Cur re nt
0.5
0.4
0.3
0.2
0.1
CESAT
V - COLLECTOR EM I TTER VOLTAGE (V)
= 10
β
25 °C
125 °C
0
110100500
I - COLLECTOR CUR RENT (mA)
C
- 40 °C
Base Emitter ON Voltage vs
Co ll ector Current
1
0.8
0.6
0.4
0.2
0
BE( ON)
V - BASE EMITTER ON VOLTAGE (V)
- 40 °C
25 °C
125°C
V = 5V
CE
0.1 1 10 25
I - COLLECTOR CURRENT (mA)
C
Co llect or-Cu to ff Curre nt
vs Amb ie nt Temp er ature
100
V = 35V
CB
10
1
0.1
CBO
I - COLLECTOR CU RREN T (nA)
0.01
25 50 75 100 125
T - A MBIE NT T EMP E R ATUR E ( C)
A
°
Input and Output Capacitance
vs Reverse Bias Voltage
20
16
12
8
CAPACITANCE (pF)
4
0
0.1 1 10 50
REVERSE BIAS VOLTAGE (V)
C
ib
C
ob
Typical Characteristics (continued)
2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)
Swi t c hing Times
vs Collector Current
250
I = I =
200
V = 15 V
150
100
TIME ( nS)
50
0
10 100 1000
I
B1CB2
cc
c
10
t
f
t
r
t
d
I - COLLECTOR CURRENT (mA)
t
s
Rise Time vs Collec t or
and Turn On Base Currents
50
20
10
t = 15 V
r
5
30 ns
2
60 ns
B1
1
I - TURN 0 N BASE CURRENT (mA )
10 100 500
I - COLLECTOR CURRENT (m A)
C
Turn On and Turn Off Times
vs Collector C urrent
500
I = I =
400
V = 15 V
300
200
TIME ( nS)
100
0
10 100 1000
I
B1CB2
cc
c
10
t
on
I - COLLECTOR CURRENT (mA)
Powe r Dissip ation vs
Ambient Temperature
1
0.75
TO-92
0.5
SOT-23
0.25
D
P - PO WER DISSIPATION (W)
0
0 25 50 75 100 125 150
SOT-223
TEMPERATURE ( C)
o
t
off
PNP General Purpose Amplifier
Typical Common Emitter Characteristics (f = 1.0kHz)
2N4403 / MMBT4403
(continued)
Common Emitter Characteristics
5
C
2
1
0.5
0.2
0.1
_ _ _ _ _ _
12 51020 50
CHAR . RELATIVE TO VALUES AT I = -10 mA
I - COLLE C TOR CURR E NT (mA)
C
o
1.5
1.4
A
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
CHAR. RELATIVE TO VALUES AT T = 25 C
h
oe
h
re
h
fe
h
ie
V = -10 V
CE
o
T = 25 C
A
Common Emitter Characteri stics
I = -10mA
C
V = -10 V
CE
h
oe
1
h
re
h
ie
h
fe
-40-200 20406080100
T - AMBIENT TEMPERATURE ( C)
A
Common Emitter Characteristics
1.3
CE
1.2
h and h
re
oe
1.1
1
h
ie
0.9
h
fe
0.8
CHAR. RELATIVE TO VALUES AT V = -10V
h
fe
h
ie
h
re
h
oe
V - COLLECTOR VOLTAGE ( V)
CE
o
h
re
h
ie
h
fe
h
oe
I = -10mA
C
o
T = 25 C
A
-20-16-12-8-4
PNP General Purpose Amplifier
(continued)
2N4403 / MMBT4403
T est Circuits
- 30 V
ΩΩ
200
Ω
ΩΩ
ΩΩ
1.0 K
Ω
ΩΩ
0
≤≤
≤ 200ns
≤≤
- 16 V
50
ΩΩ
Ω
ΩΩ
FIGURE 1: Saturated T urn-On Switching Time Test Circuit
- 6.0 V
ΩΩ
Ω
ΩΩ
37
ΩΩ
Ω
ΩΩ
0
NOTE: BV
EBO
= 5.0 V
- 30 V
50
1.0 K
ΩΩ
Ω
ΩΩ
1.5 V
1 K
ΩΩ
Ω
ΩΩ
≤≤
≤ 200ns
≤≤
FIGURE 2: Saturated T urn-Off Switching Time T est Circuit
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not intended to be an exhaustive list of all such trademarks.
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FASTr™
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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