Fairchild MMBT4354 service manual
MMBT4354
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switch requiring collector currents to 500mA.
• Sourced from process 67.
• TN4033A for characteristics.
Absolute Maximum Ratings* T
=25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Collector-Emitter Voltage -60 V
Collector-Base Voltage -60 V
Emitter-Base Voltage -5.0 V
Collector Current - Continuous -800 mA
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
3
1
1. Base 2. Emitter 3. Collector
2
SOT-23
Mark: 79
MMBT4354
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Sustaining Voltage * IC = -1.0mA, IB = 0 -60 V
Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -60 V
Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 -5.0 V
Collector Cut-off Current VCB = -50V, IE = 0 -50 nA
Emitter Cut-off Current VEB = -5.0V, VCE = 0 -10 µA
On Characteristics *
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC = -150mA, IB = -15mA
CE
(sat) Base-Emitter Saturation Voltage IC = -150mA, IB = -15mA
V
BE
(on) Base-Emitter On Voltage VCE = -0.5V, IC = -500mA -1.1 V
V
BE
DC Current Gain VCE = -5V, IC = -0.1mA
= -5V, IC = -1.0mA
V
CE
V
= -5V, IC = -10mA
CE
= -5V, IC = -100mA
V
CE
= -5V, IC = -500mA
V
CE
I
= -500mA, IB = -50mA
C
= -500mA, IB = -50mA
I
C
25
40
50
40
30
500
-0.15
-0.50
-0.9
-1.1
Small Signal Characteristics
h
fe
Small Signal Current Gain IC = -50mA, VCE = -10V,
1.0 5.0
f = 100MHz
NF Noise Figure V
= -10V, IC = -100µA
CE
= 1.0kΩ, f = 1.0KHz,
R
S
= 1.0Hz
B
W
2.0 dB
Switching Characteristics
t
on
t
off
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Turn-On Time IC = -500mA, VCC = -30V
I
= IB2 = -50mA
Turn-Off Time 400 ns
B1
100 ns
V
V
V
V
©2003 Fairchild Semiconductor Corporation Rev. A, October 2003
MMBT4354
Thermal Characteristics T
=25°C unless otherwise noted
a
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Total Device Dissipation
Derate above 25°C
350
2.8
Thermal Resistance, Junction to Case °C/W
Thermal Resistance, Junction to Ambient 357 °C/W
mW
mW/°C
©2003 Fairchild Semiconductor Corporation Rev. A, October 2003
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