Fairchild 2N4124, MMBT4124 service manual

2N4124 MMBT4124

g

A

C

B

E

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.

TO-92

C

SOT-23

Mark: ZC

2N4124 / MMBT4124

E

B

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

st

Collector-Emitter Volt age 25 V
Collector-Base Voltage 30 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 200 mA
Operating and Stora ge Junction Temperature Range -55 to +150

°

C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N4124 *MMBT4124

P

D

R

θ

JC

R

θ

J

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Total Device Dissipation

Derate above 25°C

625

5.0

350

2.8

Ther mal Resistance, Junction t o Case 83.3
Thermal Resistance, Junction to Ambient 200 357

mW

mW/°C

C/W

°

C/W

°

 2001 Fairchild Semiconductor Corporation

2N4124/MMBT4124, Rev A

(BR)

(BR)

(BR)

NPN General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

CEO

V

CBO

V

EBO

I

CBO

I

EBO

ON CHARACTERISTICS*

h

FE

V

CE(sat)

V

BE(sat)

SMALL SIGNAL CHARACTERISTICS

f

T

C

obo

C

ibo

C

cb

h

fe

NF Noise Figure

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 25 V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage

I

= 10 µA, IE = 0

C

I

= 10 µA, IC = 0

C

Collector Cut off Current VCB = 20 V, I

= 0 50 nA

E

30 V

5.0 V

Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA

DC Current Gain IC = 2.0 mA, VCE = 1.0 V

= 50 mA, VCE = 1.0 V

I

C

120

60

360

Collector-Emitter Satura tion Voltage IC = 50 mA, IB = 5.0 mA 0.3 V
Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.95 V

Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,

300 MHz

f = 100 MHz

Output Capacitance VCB = 5.0 V, IE = 0,

4.0 pF

f = 100 kHz

Input Capacitance VBE = 0.5 V, IC = 0,

8.0 pF

f = 1.0 kHz

Collector-Base Capcitance VCB = 5.0 V, IE = 0,

4.0 pF

f = 100 kHz

Small-Signal Current Gain VCE = 10 V, IC = 2.0 mA,

120 480
f = 1.0 kHz
I

= 100 µA, VCE = 5.0 V,

C

R

=1.0kΩ, f=10 Hz to 15.7 kHz

S

5.0 dB

2N4124 / MMBT4124

T ypical Characteristics

2N4124 / MMBT4124

NPN General Purpose Amplifier

(continued)

Typical Puls ed Curr ent Gain

vs Collector Current

500

V = 5V

400

300

200

100

0

0.1 1 10 100

FE

h - TYPICA L PULSE D CU RRENT GAIN

125 °C

25 °C

- 40 °C

I - COLLECTOR CURRENT (mA)

C

CE

Base-Emitter Saturation

Voltage vs Collector Current

= 10

β

1

- 40 °C

0.8

25 °C

0.6

125 °C

0.4

BESAT

V - BASE-EMITTER VOLTAGE (V)

0.1 1 10 100

I - COLLECTOR CURRENT (mA)

C

Collector-Emitter Saturation

Voltage vs Collector Current

CESAT

V - COLLECTOR-EMITTER VOLTAGE (V)

0.15

0.1

0.05

= 10

β

125 °C

25 °C

- 40 °C

0.1 1 10 100

I - COLLECTOR CURRENT (mA)

C

Base-Emitter ON Voltage vs

Collector Current

1

V = 5V

CE

0.8

0.6

0.4

0.2

0.1 1 10 100

BE(ON)

V - BASE-EMITTER ON VOLTAGE (V)

- 40 °C

I - COLLECTOR CURRENT (mA)

C

25 °C

125 °C

Collector-Cutoff Current

vs Ambient Temperature

500

V = 30V

100

CB

10

1

0.1

CBO

I - COLLECTOR CURRENT (nA)

25 50 75 100 125 150

T - AMBIENT TEMPERATURE ( C)

A

°

Capacitance vs

Reverse Bias Voltage

10

5
4

3

2

CAPACITANCE (pF)

1

0.1 1 10 100

REVERSE BIAS VOLTAGE (V)

f = 1.0 MHz

C

ibo

C

obo