February 2008
MMBT3904SL — NPN Epitaxial Silicon Transistor
MMBT3904SL
C
NPN Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra small surface mount package for all types(max 0.43mm tall)
• Suitable for general switching & amplification
• Well suited for portable application
• As complementary type, PNP MMBT3906SL is recommended
• Pb free
Absolute Maximum Ratings T
= 25°C unless otherwise noted
a
SOT-923F
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T
Collector-Base Voltage 60 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 200 mA
Junction Temperature 150 °C
Storage Temperature Range -55 ~ 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Max Unit
P
C
R
θJA
* Minimum land pad.
Collector Power Dissipation, by R
θJA
227 mW
Thermal Resistance, Junction to Ambient 550 °C/W
B
Marking : AA
E
Electrical Characteristics* T
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA
CE
V
(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA
BE
f
T
C
ob
C
ib
t
d
t
r
t
s
t
f
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3904SL Rev. 1.0.0 1
Collector-Base Breakdown Voltage IC = 10μA, IE = 0 60 V
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 40 V
Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6 V
Collector Cut-off Current V
DC Current Gain V
= 60V, V
CE
= 1V, IC = 0.1mA
CE
V
= 1V, IC = 1mA
CE
V
= 1V, IC = 10mA
CE
V
= 1V, IC = 50mA
CE
V
= 1V, IC = 100mA
CE
= 3V 50 nA
EB(OFF)
40
70
100
60
30
300
0.2
IC = 50mA, IB = 5mA
0.3
0.65 0.85
IC = 50mA, IB = 5mA
Current Gain Bandwidth Product V
Output Capacitance V
Input Capacitance V
Delay Time V
Rise Time 35 ns
= 20V, IC = 10mA, f = 100MHz 300 MHz
CE
= 5V, IE = 0, f = 1MHz 6 pF
CB
= 0.5V, IC = 0, f = 1MHz 15 pF
EB
= 3V, IC = 10mA
CC
IB1 =- IB2 = 1mA
0.95
35 ns
Storage Time 200 ns
Fall Time 50 ns
V
V
V
V
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage
MMBT3904SL — NPN Epitaxial Silicon Transistor
1000
100
Ic=10*Ib
TJ=125 oC
TJ=75 oC
TJ=25 oC
TJ=-25 oC
100
TJ=125 oC
TJ=75 oC
TJ=25 oC
TJ=-25 oC
Vce=1V
Current Gain
Collector-Emitter Voltage,[mV]
10
1 10 100 1000
Collector Current, [mA]
10 100
Collector Current, [mA]
Figure 3. Base- Emitter Saturation Voltage Figure 4. Collector- Base Leakage Current
1000
TJ=25 oC
TJ=-25 oC
Ic=10*Ib
TJ=75 oC
TJ=125 oC
1000
100
TJ=125 oC
TJ=75 oC
10
TJ=25 oC
Base- Emitter Voltage,[mV]
100
10 100
Collecto r Curren t, [mA]
Base-Collector Leakage Current,[nA]
1
10 20 30 40 50 60
Base-Collector Revere Voltage, [V]
Figure 5. Collector- Base Capacitance Figure 6. Power Derating
7
[pF]
ob
7
6
6
5
5
4
0510
Base- Collector Juntion Capacitance, C
Base- Collector Reverse Voltage, Vcb[V]
f=1mhz
300
250
200
150
100
50
Power Dissipation, [mW]
0
0 25 50 75 100 125 150
Ambient Temperature, Ta[oC]
TJ=-25 oC
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3904SL Rev. 1.0.0 2
Package Dimensions
• Case : SOT-923F
• Case Material(Molded Plastic): KTMC1060SC
• UL Flammability classification rating : “V0”
• Moisture Sensitivity level per JESD22-A1113B : MSL 1
• Lead terminals solderable per MIL-STD7502026 /JESD22A121
• Lead Free Plating : Pure Tin(Matte)
MMBT3904SL — NPN Epitaxial Silicon Transistor
SOT-923F
Dimensions in Millimeters
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3904SL Rev. 1.0.0 3
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MMBT3904SL NPN Epitaxial Silicon TransistorMMBT3904SL
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAK E CHANGES WITHOUT FURTHER NOTICE TO ANY PRO DUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component is any component of a life support
device or system whose failure to per form can be re asonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
provided in the labeling, can be reas onably expected to result
in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains f inal specifications. Fairchild Semiconducto r reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3904SL Rev. 1.0.0 4
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