Fairchild MMBT3904SL service manual

February 2008

MMBT3904SL — NPN Epitaxial Silicon Transistor

MMBT3904SL

C

NPN Epitaxial Silicon Transistor
Features

• General purpose amplifier transistor.

• Ultra small surface mount package for all types(max 0.43mm tall)

• Suitable for general switching & amplification

• Well suited for portable application

• As complementary type, PNP MMBT3906SL is recommended

• Pb free

Absolute Maximum Ratings T

= 25°C unless otherwise noted

a

SOT-923F

Symbol Parameter Value Unit

V

CBO

V

CEO

V

EBO

I

C

T

J

T

STG

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics* T

Collector-Base Voltage 60 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 200 mA
Junction Temperature 150 °C
Storage Temperature Range -55 ~ 150 °C

=25°C unless otherwise noted

a

Symbol Parameter Max Unit

P

C

R

θJA

* Minimum land pad.

Collector Power Dissipation, by R

θJA

227 mW

Thermal Resistance, Junction to Ambient 550 °C/W

B

Marking : AA

E

Electrical Characteristics* T

=25°C unless otherwise noted

a

Symbol Parameter Test Condition Min. Max. Unit

BV

CBO

BV

CEO

BV

EBO

I

CEX

h

FE

V

(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA

CE

V

(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA

BE

f

T

C

ob

C

ib

t

d

t

r

t

s

t

f

* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3904SL Rev. 1.0.0 1

Collector-Base Breakdown Voltage IC = 10μA, IE = 0 60 V
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 40 V
Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6 V
Collector Cut-off Current V
DC Current Gain V

= 60V, V

CE

= 1V, IC = 0.1mA

CE

V

= 1V, IC = 1mA

CE

V

= 1V, IC = 10mA

CE

V

= 1V, IC = 50mA

CE

V

= 1V, IC = 100mA

CE

= 3V 50 nA

EB(OFF)

40
70

100

60
30

300

0.2

IC = 50mA, IB = 5mA

0.3

0.65 0.85

IC = 50mA, IB = 5mA
Current Gain Bandwidth Product V
Output Capacitance V
Input Capacitance V
Delay Time V
Rise Time 35 ns

= 20V, IC = 10mA, f = 100MHz 300 MHz

CE

= 5V, IE = 0, f = 1MHz 6 pF

CB

= 0.5V, IC = 0, f = 1MHz 15 pF

EB

= 3V, IC = 10mA

CC

IB1 =- IB2 = 1mA

0.95

35 ns

Storage Time 200 ns
Fall Time 50 ns

V
V

V
V

Typical Performance Characteristics

Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage

MMBT3904SL — NPN Epitaxial Silicon Transistor

1000

100

Ic=10*Ib

TJ=125 oC

TJ=75 oC

TJ=25 oC

TJ=-25 oC

100

TJ=125 oC

TJ=75 oC

TJ=25 oC

TJ=-25 oC

Vce=1V

Current Gain

Collector-Emitter Voltage,[mV]

10

1 10 100 1000

Collector Current, [mA]

10 100

Collector Current, [mA]

Figure 3. Base- Emitter Saturation Voltage Figure 4. Collector- Base Leakage Current

1000

TJ=25 oC

TJ=-25 oC

Ic=10*Ib

TJ=75 oC

TJ=125 oC

1000

100

TJ=125 oC

TJ=75 oC

10

TJ=25 oC

Base- Emitter Voltage,[mV]

100

10 100

Collecto r Curren t, [mA]

Base-Collector Leakage Current,[nA]

1

10 20 30 40 50 60

Base-Collector Revere Voltage, [V]

Figure 5. Collector- Base Capacitance Figure 6. Power Derating

7

[pF]

ob

7

6

6

5

5

4

0510

Base- Collector Juntion Capacitance, C

Base- Collector Reverse Voltage, Vcb[V]

f=1mhz

300

250

200

150

100

50

Power Dissipation, [mW]

0

0 25 50 75 100 125 150

Ambient Temperature, Ta[oC]

TJ=-25 oC

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3904SL Rev. 1.0.0 2