Fairchild MMBT3904, 2N3904, PZT3904 Schematic [ru]
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier
October 2011
2N3904
TO-92 SOT-23 SOT-223
EBC
Absolute Maximum Ratings* T
MMBT3904
C
E
Mark:1A
= 25°C unless otherwise noted
a
B
PZT3904
C
E
C
B
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Collector-Emitter Voltage 40 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics T
Symbol Parameter
P
D
R
θJC
R
θJA
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 1
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 357 125 °C/W
= 25°C unless otherwise noted
a
2N3904 *MMBT3904 **PZT3904
625
5.0
Max.
350
2.8
1,000
8.0
Units
mW/°C
2
.
mW
2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier
Electrical Characteristics T
Symbol
Parameter Test Condition Min. Max. Units
= 25°C unless otherwise noted
a
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 40 V
Collector-Base Breakdown Voltage IC = 10μA, IE = 0 60 V
Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6.0 V
Base Cutoff Current VCE = 30V, VEB = 3V 50 nA
Collector Cutoff Current VCE = 30V, VEB = 3V 50 nA
ON CHARACTERISTICS*
h
FE
DC Current Gain IC = 0.1mA, VCE = 1.0V
= 1.0mA, VCE = 1.0V
I
C
IC = 10mA, VCE = 1.0V
= 50mA, VCE = 1.0V
I
C
= 100mA, VCE = 1.0V
I
C
V
CE(sat)
Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
V
BE(sat)
Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product IC = 10mA, VCE = 20V,
f = 100MHz
C
obo
Output Capacitance VCB = 5.0V, IE = 0,
f = 1.0MHz
C
ibo
Input Capacitance VEB = 0.5V, IC = 0,
f = 1.0MHz
NF Noise Figure IC = 100μA, VCE = 5.0V,
RS = 1.0kΩ,
f = 10Hz to 15.7kHz
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time VCC = 3.0V, VBE = 0.5V
= 10mA, IB1 = 1.0mA
I
Rise Time 35 ns
C
Storage Time VCC = 3.0V, IC = 10mA,
= IB2 = 1.0mA
I
Fall Time 50 ns
B1
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
40
70
100
300
60
30
0.2
0.3
0.65 0.85
0.95
V
V
V
V
300 MHz
4.0 pF
8.0 pF
5.0 dB
35 ns
200 ns
Ordering Information
Part Number Marking Package Packing Method Pack Qty
2N3904BU 2N3904 TO-92 BULK 10000
2N3904TA 2N3904 TO-92 AMMO 2000
2N3904TAR 2N3904 TO-92 AMMO 2000
2N3904TF 2N3904 TO-92 TAPE REEL 2000
2N3904TFR 2N3904 TO-92 TAPE REEL 2000
MMBT3904 1A SOT-23 TAPE REEL 3000
MMBT3904_D87Z 1A SOT-23 TAPE REEL 10000
PZT3904 3904 SOT-223 TAPE REEL 2500
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 2
Typical Performance Characteristics
β
β
2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier
Typical Puls ed Curr ent Gain
vs Collector Current
500
V = 5V
400
300
125 °C
25 °C
CE
200
- 40 °C
0
0.1 1 10 1 00
I - COLLECTOR CURRENT (mA)
C
h - TYPI CAL PULSE D CURREN T GAIN
100
FE
Base-Emitter Saturation
Voltage vs Collector Current
β
= 10
1
- 40 °C
0.8
25 °C
0.6
125 °C
0.4
BESAT
V - BASE-EMITTER VOLTAGE (V)
0.1 1 10 100
I - COLLECTOR CURRENT (mA)
C
Collector-Emitter Saturation
Voltage vs Collecto r Cu rren t
0.15
0.1
0.05
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
β
= 10
125 °C
25 °C
- 40 °C
0.1 1 10 100
I - COLLECTOR CURRENT (mA)
C
Base-Emitter ON Voltage vs
Collector Current
1
V = 5V
CE
0.8
0.6
0.4
0.2
0.1 1 10 100
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
I - COLLECTOR CURRENT (mA)
C
25 °C
125 °C
Collector-Cutoff Current
vs Ambient Temperature
500
V = 30V
100
CB
10
1
0.1
CBO
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AMBIENT TEMPERATURE ( C)
A
°
10
5
4
3
2
CAPACITANCE (pF)
1
0.1 1 10 100
Capacitance vs
Reverse Bias Voltage
f = 1.0 MHz
C
ibo
REVERSE BIAS VOLTAGE (V)
C
obo
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0 3
Loading...