Fairchild MMBT2369 service manual
MMBT2369 / PN2369
NPN Switching Transistor
• This device is designed for high speed saturated switching at
collector currents of 10mA to 100mA.
• Sourced from process 21.
MMBT2369 PN2369
C
E
SOT-23
B
Mark: 1J
1
TO-92
1. Emitter 2. Base 3. Collector
MMBT2369 / PN2369 — NPN Switching Transistor
February 2008
Absolute Maximum Ratings * T
= 25×C unless otherwise noted
a
Symbol Parameter Ratings Units
V
CEO
V
CBO
V
EBO
I
C
I
CP
TJ, T
STG
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
NOTES:
1) These rating are based on a m aximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Collector-Emitter Voltage 15 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 4.5 V
Collector Current - Continuous 200 mA
**Collector Current (Pulse) 400 mA
Operating and Storage Junction Temperature Range -55 ~ 150 °C
= 25°C unless otherwise noted
a
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
* Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”.
Total Device Dissipation
Derate above 25°C
350
2.8
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357 °C/W
mW
mW/°C
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1. 0.0 1
MMBT2369 / PN2369 — NPN Switching Transistor
Electrical Characteristics T
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
On Characteristics
h
FE
V
CE(sat)
V
BE(sat)
Small Signal Characteristics
C
obo
C
ibo
h
fe
Switching Characteristics
t
s
t
on
t
off
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 15 V
Collector-Emitter Breakdown Voltage IC = 10μA, VBE = 0 40 V
Collector-Base Breakdown Voltage IC = 10μA, IE = 0 40 V
Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 4.5 V
Collector Cutoff Current VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 125°C
DC Current Gain * IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 2.0V
40
20
0.4
30
120
Collector-Emitter Saturation Voltage * IC = 10mA, IB = 1.0mA 0.25 V
Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 0.7 0.85 V
Output Capacitance VCB = 5.0V, IE = 0, f = 1.0MHz 4.0 pF
Input Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz 5.0 pF
Small -Signal Current Gain IC = 10mA, VCE = 10V, RG = 2.0kΩ,
5.0
f = 100MHz
Storage Time IB1 = IB2 = IC = 10mA 13 ns
Turn-On Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA 12 ns
Turn-Off Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA,
18 ns
IB2 = 1.5mA
μA
μA
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1. 0.0 2
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