Fairchild MMBT2222AT service manual

MMBT2222AT

NPN Epitaxial Silicon Transistor

MMBT2222AT — NPN Epitaxial Silicon Transistor

September 2008

Features

C

• General purpose amplifier transistor.

• Ultra-Small Surface Mount Package for all types.

• General purpose switching & amplification application

Absolute Maximum Ratings T

= 25°C unless otherwise noted

a

Marking : A02

SOT-523F

Symbol Parameter Value Unit

V

CBO

V

CEO

V

EBO

I

C

T

J

T

STG

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics* T

Collector-Base Voltage 75 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 600 mA
Junction Temperature 150 °C
Storage Temperature Range -55 ~ 150 °C

=25°C unless otherwise noted

a

Symbol Parameter Max Unit

P

C

R

θJA

* Minimum land pad.

Electrical Characteristics* T

Collector Power Dissipation, by R

θJA

250 mW

Thermal Resistance, Junction to Ambient 500 °C/W

=25°C unless otherwise noted

a

Symbol Parameter Test Condition Min. Max. Unit

BV
BV
BV
I

CEX

h

CBO
CEO
EBO

FE

Collector-Base Breakdown Voltage IC = 10μA, IE = 0 75 V
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 40 V
Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6 V
Collector Cut-off Current V
DC Current Gain V

= 60V, V

CE

= 1V, IC = 0.1mA

CE

V

= 1V, IC = 1mA

CE

V

= 1V, IC = 10mA

CE

V

= 1V, IC = 150mA

CE

= 3V 10 nA

EB(OFF)

35
50
75

100

E

B

V

(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA

CE

V

(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA

BE

f

T

C

ob

C

ib

t

d

t

r

t

s

t

f

* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 1

Current Gain Bandwidth Product V
Output Capacit ance V
Input Capacitance V
Delay Time V
Rise Time 25 ns
Storage Time 225 ns
Fall Time 60 ns

IC = 500mA, IB = 50mA

0.6 1.2

IC = 500mA, IB = 50mA

= 20V, IC = 20mA, f = 100MHz 300 MHz

CE

= 10V, IE = 0, f = 1MHz 8 pF

CB

= 0.5V, IC = 0, f = 1MHz 30 pF

EB

= 30V, IC = 150mA

CC

IB1 =- IB2 = 15mA

0.3

1.0

2.0

10 ns

V
V

V
V

Typical Performance Characteristics

Figure 1. DC Current Gain Figure 2. DC Current Gain

MMBT2222AT — NPN Epitaxial Silicon Transistor

Vce=5V

TJ=125 oC

TJ=75 oC
TJ=25 oC

100

TJ=-25 oC

Current Gain

10

1 10 100 1000

Collector Current, [mA]

Vce=10V

TJ=125 oC

TJ=75 oC
TJ=25 oC

Current Gain

100

1 10 100 1000

TJ=-25 oC

Collector Current, [mA]

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation voltage

1000

100

TJ=125 oC

TJ=75 oC

Ic=10*Ib

TJ=25 oC

TJ=-25 oC

1000

TJ=25 oC

TJ=-25 oC

TJ=125 oC

Ic=10*Ib

TJ=75 oC

Collector-Emitter Voltage,[mV]

10

10 100

Collector Current, [mA]

Base- Emitter Voltage,[mV]

100

10 100

Collector Current, [mA]

Figure 5. Collector- Base Leakage Current Figure 6. Collector-Base Capapcitance

f=1mhz

1000

TJ=125 oC

100

TJ=75 oC

TJ=25 oC

10

TJ=-25 oC

Base-Collector Leakage Current,[nA]

1

10 20 30 40 50 60 70

Base-Collector Revere Voltage, [V]

15

[pF]

ob

13

10

8

5

0510

Base- Collector Juntion Capacitance, C

Base- Collector Reverse Voltage, Vcb[V]

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 2