Fairchild MMBT2222A, PZT2222A Schematic [ru]

MMBT2222A / PZT2222A

SOT-23

Mark:1P

C

B

E

SOT-223

E

B

C

C

NPN General-Purpose Amplifier

Features

• This device is for use as a medium power amplifier and
switch requiring collector currents up to 500mA.

• Sourced from process 19.

MMBT2222A / PZT2222A — NPN General-Purpose Amplifier

July 2014

Figure 1. MMBT2222A Device Package Figure 2. PZT2222A Device Package

Ordering Information

Part Number Top Mark Package Packing Method

MMBT2222A 1P SOT-23 3L Tape and Reel

PZT2222A 2222A SOT-223 4L Tape and Reel

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera­ble above the recommended operating co nd iti ons an d s tres si ng the parts to these levels is not recommended. In addi­tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

Symbol Parameter Value Unit

V

CEO

V

CBO

V

EBO

I

C

T

STG

Note:

1. These rating are based on a maximum junction temperature of 150 °C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operation.

Collector-Emitter Voltage 40 V
Collector-Base Voltage 75 V
Emitter-Base Voltage 6.0 V
Collector Current 1.0 A
Operating and Storage Junction Temperature Range -55 to 150 °C

(1), (2)

= 25°C unless otherwise noted.

A

© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222A / PZT2222A Rev. 1.1.0

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

MMBT2222A / PZT2222A — NPN General-Purpose Amplifier

Symbol Parameter

P

R

θJA

Total Device Dissipation 350 1000 mW

D

Derate Above 25°C 2.8 8.0 mW/°C
Thermal Resistance, Junction to Ambient 357 125 °C/W

MMBT2222A

(3)

Max.

PZT2222A

(4)

Unit

Notes:

3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.

4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2.

© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222A / PZT2222A Rev. 1.1.0 2

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Max. Unit

Off Characteristics

BV

(BR)CEO

BV

(BR)CBO

BV

(BR)EBO

I

CEX

I

CBO

I

EBO

I

BL

On Characteristics

h

FE

V

CE(sat)

V

BE(sat)

Small Signal Characteristics

f

T

C

obo

C

ibo

rb’C

NF Noise Figure

Re(h

Switching Characteristics

t

d

t
t

s

t

Note:

5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

Collector-Emitter Breakdown

(5)

Voltage

IC = 10 mA, IB = 0 40 V

Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V
Emitter-Base Breakdown V oltage IE = 10 μA, IC = 0 6.0 V
Collector Cut-Off Current VCE = 60 V, V

= 60 V, IE = 0 0.01

V

Collector Cut-Off Current

CB

V

= 60 V, IE = 0, TA = 125°C10

CB

= 3.0 V 10 nA

EB(off)

Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA
Base Cut-Off Current VCE = 60 V, V

= 0.1 mA, VCE = 10 V 35

I

C

= 1.0 mA, VCE = 10 V 50

I

C

= 10 mA, VCE = 10 V 75

I

C

= 10 mA, VCE = 10 V,

I

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

(5)

Current Gain Bandwidth Product

C

= -55°C

T

A

= 150 mA, VCE = 10 V

I

C

= 150 mA, VCE = 1 V

I

C

= 500 mA, VCE = 10 V

I

C

IC = 150 mA, IB = 15 mA 0.3

(5)

I

= 500 mA, IB = 50 mA 1.0

C

IC = 150 mA, IB = 15 mA 0.6 1.2
I

= 500 mA, IB = 50 mA 2.0

C

= 20 mA, VCE = 20 V,

I

C

f = 100 MHz

= 3.0 V 20 nA

EB(off)

35

(5)

(5)

(5)

100 300

50
40

300 MHz

Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 8.0 pF
Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 25 pF

= 20 mA, VCB = 20 V,

I

Collector Base Time Constant

c

Real Part of Common-Emitter

)

ie

High Frequency Input Impedance

Delay Time
Rise Time 25 ns

r

Storage Time
Fall Time 60 ns

f

C

f = 31.8 MHz

= 100 μA, VCE = 10 V,

I

C

= 1.0 kΩ, f = 1.0 kHz

R

S

= 20 mA, VCE = 20 V,

I

C

f = 300 MHz

V

= 30 V, V

CC

= 150 mA, IB1 = 15 mA

I

C

V

= 30 V, IC = 150 mA,

CC

= IB2 = 15 mA

I

B1

EB(off)

= 0.5 V,

150 pS

4.0 dB

60 Ω

10 ns

225 ns

MMBT2222A / PZT2222A — NPN General-Purpose Amplifier

μA

V

V

© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222A / PZT2222A Rev. 1.1.0 3