June 2006
MMBFJ271
P-Channel Switch
Features
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
G
D
SOT-23
Mark : 62T
MMBFJ271 P-Channel Switch
S
V
DG
V
GS
I
GF
TJ, T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
- These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Drain-Gate Voltage -30 V
Gate-Source Voltage 30 V
Forward Gate Current 50 mA
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Thermal Characteristics
Symbol Parameter Value Units
P
D
R
θJA
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics T
Symbol Parameter Test Condition MIN MAX Units
Off Characteristics (Note3)
V
(BR)GSS
I
GSS
V
GS(off)
On Characteristics (Note3)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 556 °C/W
= 25°C unless otherwise noted
C
Gate-Source Breakdwon Voltage IG = 1.0µA, VDS = 0 30 V
Gate Reverse Current V
Gate-Source Cutoff Voltage V
= 20V, V
GS
= -15V, ID = -1.0nA 1.5 4.5 V
DS
= 0 200 pA
DS
225
1.8
mW
mW/°C
I
DSS
gfs Forward Transferconductance VGS = 0V, VDS = 15V, f = 1.0kHz 8000 18000 µmhos
goss Common- Source Output Conduc-
Note3 : Short duration test pulse used to minimize self-heating effect.
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
MMBFJ271 Rev. A
Zero-Gate Voltage Drain Current * VDS = -15V, VGS = 0 -6.0 -50 mA
V
= 0V, VDS = 15V, f = 1.0kHz 500 µmhos
tance
GS
Package Dimensions
0.40
±0.03
MMBFJ271 P-Channel Switch
SOT-23
0.20 MI
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.1
0.38 RE
+0.05
0.12
–0.02
MMBFJ271 Rev. A
Dimensions in Millimeters
2 www.fairchildsemi.com