Fairchild MMBFJ111, MMBFJ112, MMBFJ113, J111, J112 Schematic [ru]
...
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
J111
J112
J113
G
S
D
TO-92
MMBFJ111
MMBFJ112
MMBFJ113
G
SOT-23
Mark: 6P / 6R / 6S
NOTE: Source & Drain
are interchangeable
D
S
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabilized amplifiers. Sourced
from Process 51.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
TJ ,T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Drain-Gate Voltage 35 V
Gate-Source Voltage - 35 V
Forward Gate Current 50 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
5
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
J111-113 *MMBFJ111-113
P
D
R
JC
θ
R
JA
θ
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 556
625
5.0
350
2.8
J111/112/113/MMBFJ111/112/113, Rev A
mW
mW/°C
C/W
°
C/W
°
N-Channel Switch
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GS(off)
I
D(off)
Gate-Source Breakdown Voltage
Gate Reverse Current VGS = - 15 V, VDS = 0 - 1.0 nA
Gate-Source Cutoff Voltage
Drain Cutoff Leakage Current VDS = 5.0 V, VGS = - 10 V 1.0 nA
ON CHARACTERISTICS
I
DSS
r
DS(on)
Zero-Gate Voltage Drain Current*
Drain-Source On Resistance
= - 1.0 µA, VDS = 0
I
G
= 5.0 V, ID = 1.0 µA
V
DS
V
= 15 V, IGS = 0
DS
≤ 0.1 V, VGS = 0
V
DS
111
112
113
111
112
113
111
112
113
- 35 V
- 3.0
- 1.0
- 0.5
- 10
- 5.0
- 3.0
20
5.0
2.0
30
50
100
V
V
V
mA
mA
mA
Ω
Ω
Ω
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
SMALL-SIGNAL CHARACTERISTICS
C
C
C
C
dg(on)
sg(on)
dg(off)
sg(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance VDS = 0, VGS = - 10 V, f = 1.0 MHz 5.0 pF
Source-Gate Off Capacitance VDS = 0, VGS = - 10 V, f = 1.0 MHz 5.0 pF
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%
T ypical Characteristics
Common Drain-Source
10
V = 0 V
GS
8
- 0.2 V
- 0.4 V
6
4
2
D
I - DRAIN CURRENT (mA)
0
0 0.4 0.8 1.2 1.6 2
V - DRAIN-SOURCE VOLTAGE (V)
DS
- 1.4 V
T = 25°C
A
TYP V = - 2.0 V
GS(off)
- 0.6 V
- 0.8 V
- 1.0 V
VDS = 0, VGS = 0, f = 1.0 MHz 28 pF
Parameter Interactions
100
r
DS
g
fs
I , g @ V = 15V,
fs
DSS
V = 0 PULSED
GS
r @ 1.0 mA, V = 0
DS
V @ V = 15V,
GS(off)
DSS
_
I = 1.0 nA
D
I
_
DS
GS
DS
DS
_
- 1.2 V
50
20
10
fs
5
_
g - TRANSCONDUCTANCE (mmhos)
0.5 1 2 5 10
V - GATE CUTOFF VOLTAGE (V)
GS (OFF)
r - DRAIN "ON" RESISTANCE
DS
100
50
20
10
(
Ω
5
)
_
Typical Characteristics (continued)
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
N-Channel Switch
(continued)
40
30
20
10
D
I - DRAIN CURRENT (mA)
30
20
10
fs
g - TRANSCONDUCTANCE (mmhos)
Transfer Characteristics
V = - 3.0 V
GS(off)
- 55°C
25°C
125°C
V = - 2.0 V
GS(off)
125°C
25°C
- 55°C
0
V - GATE-SOURC E VOLTAGE (V)
GS
Transfer Chara cteristics
V = 15 V
DS
0
V - GATE-SOURCE VOLTAGE (V)
GS
V = 15 V
DS
V = - 3.0 V
GS(off)
- 55°C
25°C
125°C
V = - 2.0 V
GS(off)
- 55°C
25°C
-3-2-10
125°C
Transfer Characteristics
16
12
8
4
D
I - DRAIN CURRENT (mA)
0
V = - 1.6 V
GS(off)
- 55°C
25°C
125°C
V = - 1.1 V
GS(off)
125°C
V - GATE-SOU RCE VOLT AGE (V)
GS
25°C
- 55°C
V = 15 V
DS
-1.5-1-0.50
Transfer Characteristics
30
V = - 1.6 V
GS(off)
- 55°C
20
10
V = 15 V
DS
fs
0
-3-2-10
g - TRANSCONDUCTANCE (mmhos)
V - GATE-SOURCE VOLTAGE (V)
GS
25°C
125°C
V = - 1.1 V
GS(off)
- 55°C
25°C
125°C
-1.5-1-0.50
5
On Resistance vs Drain Current
)
Ω
(
100
125°C
V
GS(off)
TYP = - 2.0V
50
25°C
125°C
- 55°C
20
25°C
r @ V = 0
GS
DS
- 55°C
DS
r - DRAIN "ON" RESISTANCE
10
12 51020 50100
I - DRAIN CURRENT (mA)
D
V
GS(off)
TYP = - 7.0V
Normalized Drain Resistance
Ω ) Ω )
Ω ) Ω )
Ω )
(
100
50
20
10
5
2
DS
1
r - NORMALIZED RESISTANCE
0 0.2 0.4 0.6 0.8 1
V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)
GS
vs Bias Voltage
V @ 5.0V, 10 µA
GS(off)
r
________
1 -
V
DS
GS
V
GS(off)
r =
DS
GS(off)
Typical Characteristics (continued)
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
N-Channel Switch
(continued)
Transconductance
vs Drain Current
100
V = - 1.4V
10
fs
g - TRANSCONDUCTANCE (mmhos)
GS(off)
V = - 3.0V
GS(off)
1
0.1 1 10
I - DRAIN CURRENT (mA)
D
T = 25°C
A
V = 15V
DG
f = 1.0 kHz
Capacitance vs Voltage
100
f = 0.1 - 1.0 MHz
rs
is
C (C ) - CAPACITANCE (pF)
10
C (V = 0)
DS
rs
1
V - GATE-SOURCE VOLTAGE (V)
GS
C (V = 0)
DS
is
C (V = 20)
DS
is
Output Conductance
vs Drain Current
100
µ
T = 25°C
10
A
f = 1.0 kHz
V = - 5.0V
GS(off)
1
0.1
0.01 0.1 10
os
g - OUTPUT CONDUCTANCE ( mhos)
I - DRAIN CURRENT (mA)
V = - 0.85V
GS(off)
D
V = 5.0V
DG
5.0V
10V
15V
10V
20V
15V
20V
V = - 2.0V
GS(off)
5.0V
10V
15V
20V
Noise Voltage vs Frequency
100
V = 15V
DG
√
50
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f ≥ 1.0 kHz
10
5
I = 10 mA
n
e - NOISE VOLTAGE (nV / Hz)
-20-16-12-8-40
D
1
0.01 1 10 100
f - FREQUENCY (kHz)
I = 1.0 mA
D
Noise Voltage vs Current
100
V = 15V
√
n
e - NOISE VOLTAGE (nV / Hz)
DG
f = 10 Hz
f = 100 Hz
f = 1.0 kHz
10
f = 10 kHz
f = 100 kHz
1
0.01 0.1 1 10
I - DRAIN CURRENT (mA)
D
Power Dissipation vs
Ambient Temperature
700
600
500
SOT-23
400
300
200
100
D
P - POWER DISSIP ATION (mW)
0
0255075100125150
TO-92
TEMPERATURE ( C)
o
Typical Characteristics (continued)
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
N-Channel Switch
(continued)
Switching Turn-On Time
vs Gate-Source Voltage
25
t
20
r (ON)
15
10
2.5 mA
d(ON)
- 6.0V
5
r(ON)
t ,t - TURN-ON TIME (ns)
0
V - GATE-SOURCE CUTOFF VOLTAGE (V)
GS(off)
V = 3.0V
DD
t APPROX. I INDEP ENDENT
V = 3.0V
T = 25°C
t
d (ON)
r
GS(off)
A
D
I = 6.6 mA
D
V = -12V
Switching Turn-Off Time
vs Drain Current
100
V = -2.2V
GS(off)
80
- 4.0V
60
- 7.5V
GS
-10-8-6-4-20
40
OFF
20
t
d(off)
d(OFF)
0
t ,t - TURN-OFF TIME (ns)
0246810
t
(off)
I - DRAIN CURRENT (mA)
D
T = 25°C
A
V = 3.0V
DD
V = -12V
GS
t DEVICE
d(off)
V INDEPENDENT
GS(off)
5
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