Fairchild MMBF5434 service manual
N-Channel Switch
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
MMBF5434
3
2
SuperSOT-3
1
Marking: 61Z
1. Drain 2. Source 3. Gate
MMBF5434
Absolute Maximum Ratings * T
=25°C unless otherwise noted
A
Symbol Parameter Value Units
V
DG
V
GS
I
GF
, T
T
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Drain-Gate Voltage 25 V
Gate-Source Voltage -25 V
Forward Gate Current 10 mA
Operating and Storage Junction Temperature Range -55 ~ +150 °C
TA=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
I
GSS
(off) Gate-Sour ce C u t o ff Voltage VDS = 5.0V, ID = 3.0nA -1.0 -4.0 V
V
GS
( o f f ) D r a i n C u t o f f Vol t a g V
I
D
Gate-Source Breakdwon Voltage IG = -1.0µA, VDS = 0 -25 V
Gate Reverse Current VGS = -15V, VDS = 0 200 nA
DS
= 5.0, V
= -10V 200 pA
GS
On Characteristics
I
DSS
r
(on) Drain-Source On Resistance VDS = 0, ID = 10mA 10 Ω
DS
Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0 30 mA
Small Signal Characteristics
C
iss
C
rss
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Input Capacitance VDS = 0, VGS = 10V, f = 1.0MHz 30 pF
Reverse Transfer Capacitance VDS = 0, VGS = 10V, f = 1.0MHz 15 pF
©2003 Fairchild Semiconductor Corporation Rev. A, February 2003
MMBF5434
Thermal Characteristics T
=25°C unless otherwise noted
A
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06"
Total Device Dissipation
Derate above 25°C
350
2.8
Thermal Resistance, Junction to Case °C/W
Thermal Resistance, Junction to Ambient 556 °C/W
mW
mW/°C
©2003 Fairchild Semiconductor Corporation Rev. A, February 2003
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