Fairchild MMBF5103 service manual
MMBF5103
N-Channel Switch
• This device is designed for low level analog switching, sample and
hold circuits and chopper st
abilized amplifiers.
• Sourced from Process 51.
• See J111 for characteristics.
Absolute Maximum Ratings*
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
T
, T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Drain-Gate Voltage 40 V
Gate-Source Voltage -40 V
Forward Gate Current 50 mA
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
G
D
1. Drain 2. Source 3. Gate
S
SOT-23
Mark: 66A
MMBF5103
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
V
GS(f)
Gate-Source Breakdown Voltage IG = 1.0µA, VDS = 0 -40 V
Gate Reverse Current VGS = -15V, VDS = 0
= -15V, VDS = 0, Ta = 125°C
V
Gate-Source Cutoff Voltage V
GS
= 20V, ID = 1.0nA -1.2 -2.7 V
DS
-200
-500
Gate-Source Forward Voltage IG = 1.0mA, VDS = 0 1.0 V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0 10 40 mA
Small Signal Characteristics
C
ISS
C
rss
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Thermal Characteristics
Input Capacitance VDS = 15V, VGS = 0, f = 1.0MHz 16 pF
Reverse Transfer Capacitance VGS = -15V, f = 1.0MHz 6.0 pF
Ta=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJA
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
Thermal Resistance, Junction to Ambient 556 °C/W
pA
nA
©2003 Fairchild Semiconductor Corporation Rev. A, September 2003
Package Dimensions
0.40
±0.03
MMBF5103
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. A, September 2003
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