Fairchild MMBF4416A service manual
MMBF4416A
N-Channel RF Amplifier
• This device is designed for RF amplifiers.
• Sourced from process 50.
MMBF4416A N-Channel RF Amplifier
March 2005
G
S
SOT-23
D
Mark: 6BG
Absolute Maximum Ratings*
Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
T
, T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junct i on temperature of 150 degrees C.
2) These are steady state limits. The factory sho ul d be con sul t ed on applications involving pulsed or lo w dut y cy cle operations.
Electrical Characteristics
Drain-Gate Voltage 35 V
Gate-Source Voltage -35 V
Forward Gate Current 10 mA
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)GSS
I
GSS
V
GS
V
GS
On Characteristics
I
DSS
V
GS
Small Signal Characteristics
g
fs
g
os
C
iss
Crss Reverse Transfer Capacitance V
C
oss
NF Noise Figure V
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%
Gate-Source Breakdown Voltage VDS = 0, IG = 1.0µA-35 V
Gate Reverse Current VGS = -20V, VDS = 0 -100 pA
(off) Gate Source Cut-off Voltage VDS = 15V, ID = 1.0nA -2.5 -6.0 V
Gate Source Voltage VDS = 15V, ID = 500µA-1 -5.5V
Zero-Gate Voltage Drain Current VGS = 15V, VGS = 0 5 15 mA
(f) Gate-Source Forward Voltage VDS = 0, IG = 1.0mA 1 V
Forward Transfer Conductance * VDS = 15V, VGS = 0, f = 1.0kHz 4500 7500 µmhos
Output Conductance * VDS = 15V, VGS = 0, f = 1.0kHz 50 µmhos
Input Capacitance VDS = 15V, VGS = 0, f = 1.0MHz 4.0 pF
= 15V, VGS = 0, f = 1.0MHz 0.8 pF
DS
Output Capacitance VDS = 15V, VGS = 0, f = 1.0MHz 2.0 pF
= 15V, VGS = 0, ID = 5mA,
DS
R
= 1kΩ, f = 400MHz
g
4.0 dB
©2005 Fairchild Semiconductor Corporation
MMBF4416A Rev. A2
1
www.fairchildsemi.com
MMBF4416A N-Channel RF Amplifier
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJA
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 556 °C/W
225
1.8
mW
mW/°C
MMBF4416A Rev. A2
2
www.fairchildsemi.com
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