Fairchild MMBF4416 service manual
MMBF4416
N-Channel RF Amplifiers
MMBF4416 — N-Channel RF Amplifiers
April 2009
• This device is designed for RF amplifiers.
• Sourced from process 50.
Absolute Maximum Ratings T
=25°C unless otherwise noted
A
G
S
SOT-23
D
Mark: 6A
Symbol Parameter Value Units
V
DG
V
GS
I
GF
T
, T
J
STG
Electrical Characteristics T
Drain-Gate Voltage 30 V
Gate-Source Voltage -30 V
Forward Gate Current 10 mA
Junction and Storage Temperature Range -55 to +150 °C
=25°C unless otherwise noted
A
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)GSS
I
GSS
V
(off) Gate Source Cut-off Voltage VDS = 15V, ID = 1nA -2.5 -6 V
GS
V
GS
On Characteristics
I
DSS
V
(f) Gate-Source Forward Voltage VDS = 0, IG = 1mA 1 V
GS
Small Signal Characteristics
l Forward Transfer Admittance VDS = 15V, VGS = 0, f = 1KHz 4500 7500 μmhos
lY
fs
ly
l Output Admittance VDS = 15V, VGS = 0, f = 1KHz 50 μmhos
os
C
iss
C
rss
C
oss
Functional Characteristics
NF Noise Figure V
G
ps
Gate-Source Breakdown Voltage VDS = 0, IG = 1μA-30V
Gate Reverse Current VGS = -20V, VDS = 0
V
= -20V, VDS = 0, TA = 150°C
GS
-1
-200nAnA
Gate Source Voltage VDS = 15V, ID = 0.5mA -1 -5.5 V
Zero-Gate Voltage Drain Current VGS = 15V, VGS = 0 5 15 mA
Input Capacitance VDS = 15V, VGS = 0, f = 1MHz 4 PF
Reverse Transfer Capacitance VDS = 15V, VGS = 0, f = 1MHz 0.9 PF
Output Capacitance VDS = 15V, VGS = 0, f = 1MHz 2 PF
= 15V , ID = 5mA, Rg = 100Ω, f = 100MHz 2 dB
DS
Common Source Power Gain VDS = 15V , ID = 5mA, Rg = 100Ω, f = 100MHz 18 dB
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4416 Rev. B2 1
MMBF4416 — N-Channel RF Amplifiers
Thermal Characteristics T
=25°C unless otherwise noted
A
Symbol Parameter Max. Units
P
D
R
θJA
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 556 °C/W
225
1.8
mW
mW/°C
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4416 Rev. B2 2
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