Fairchild MMBF170, BS170 Schematic

March 2010

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field ef fec t transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC.

Features

■ High density cell design for low R

■ Voltage controlled small signal switch.

■ Rugged and reliable.

■ High saturation current capability.

These products are particularly sui ted for low vol tage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

BS170 MMBF170

D

S

D

G

S

TO-92

G

SOT-23

DS(ON)

.

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter BS170 MMBF170 Units

V

DSS

V

DGR

V

GSS

I

D

T

, T

J

STG

T

L

Thermal Characteristics T

Drain-Source Voltage 60 V Drain-Gate Voltage (R

≤ 1MΩ)60V

GS

Gate-Source V oltage ± 20 V Drain Current - Continuous 500 500

- Pulsed 1200 800

mA

Operating and Storage Temperature Range - 55 to 150 °C Maximum Lead Temperature for Soldering

300 °C

Purposes, 1/16" from Case for 10 Seconds

= 25°C unless otherwi s e noted

A

Symbol Parameter BS170 MMBF170 Units

P

D

R

θJA

Maximum Power Dissipation Derate above 25°C

830

6.6

300

2.4

mW

mW/°C

Thermal Resistance, Junction to Ambient 150 417 °C/W

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics T

=25°C unless otherwise noted

A

Symbol Parameter Conditions Type Min. Typ. Max. Units

OFF CHARACTERISTICS

BV

I

DSS

I

GSSF

ON CHARACTERISTICS (Notes 1)

V

GS(th)

R

DS(ON)

g

Dynamic Characteristics

C C C

Switching Characteristics (Notes 1)

Drain-Source Breakdown Voltage VGS = 0V, ID = 100μAAll60 V

DSS

Zero Gate Voltage Drain Current VDS = 25V, VGS = 0V All 0.5 μA Gate - Body Leakage, Forward VGS = 15V, VDS = 0V All 10 nA

Gate Threshold Voltage VDS = VGS, ID = 1mA All 0.8 2.1 3 V Static Drain-Source On-Resistance VGS = 10V, ID = 200mA All 1.2 5 Ω Forward Transconductance VDS = 10V, ID = 200mA BS170 320 mS

FS

≥ 2 V

V

DS

= 200mA

I

D

Input Capacitance VDS = 10V, VGS = 0V,

iss

Output Capacitance All 17 30 pF

oss

Reverse Transfer Capacitance All 7 10 pF

rss

Turn-On Time VDD = 25V, ID = 200mA,

t

on

Turn-Off Time VDD = 25V, ID = 200mA,

t

off

f = 1.0MHz

= 10V, R

V

GS

= 25V, ID = 500mA,

V

DD

= 10V, R

V

GS

= 10V, R

V

GS

= 25V, ID = 500mA,

V

DD

= 10V, R

V

GS

DS(on)

GEN

,

= 25Ω

= 50Ω

= 25Ω

= 50Ω

MMBF170 320

All 24 40 pF

BS170 10 ns

MMBF170 10

BS170 10 ns

MMBF170 10

Note:

1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.

Ordering Information

Part Number Package Package Type Lead Frame Pin array

BS170 TO-92 BULK STRAIGHT D G S BS170_D26Z TO-92 Tape and Reel FORMING D G S BS170_D27Z TO-92 Tape and Reel FORMING D G S BS170_D74Z TO-92 AMMO FORMING D G S BS170_D75Z TO-92 AMMO FORMING D G S

MMBF170 SOT-23 Tape and Reel

Typical Electrical Characteristics

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics (continued)

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics (continued)

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

Fairchild MMBF170, BS170 Schematic [ru]