The MM74HC540 and MM74HC541 3-STATE buffers utilize advanced silicon-gate CMOS technology. They possess high drive current outp uts which enable high speed
operation even when driving large bus capacitances.
These circuits achieve speed s comparable to low power
Schottky devices, while r etaining the advantage of CMOS
circuitr y, i.e., high noise immuni ty, and low power consump tion. Both devices have a fano ut of 15 LS-TTL equivalent
inputs.
The MM74HC540 is an inverting buffer and the
MM74HC541 is a non-inverti ng buffer. The 3-STATE control gate operates as a two-input NOR such that if either G1
or G2 are HIGH, all eigh t outputs are in the high-impedance state.
In order to enhance PC board layout, the MM74HC540 and
MM74HC541 offers a pino ut having inputs a nd outputs on
opposite sides of the package. All inputs are protected from
damage due to static discharge by diodes to V
ground.
CC
Features
■ Typical propagation delay: 12 ns
■ 3-STATE outputs for connection to system buses
■ Wide power supply range: 2–6V
■ Low quiescent current: 80
■ Output current: 6 mA
and
P
A maximum (74HC Series)
Ordering Code:
Order Number Package NumberPackage Description
MM74HC540WMM20B20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300" Wide
MM74HC540SJM20D20-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide
MM74HC540MTCMTC2020-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide
MM74HC540NN20A20-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300" Wide
MM74HC541WMM20B20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300" Wide
MM74HC541SJM20D20-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide
MM74HC541MTCMTC2020-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide
MM74HC541NN20A20-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300" Wide
Devices also availab l e in Tape and Reel. Specify by appending the suffix let t er “X” to the ordering code.
Supply Voltage (VCC)
DC Input Voltage (V
DC Output Voltage (V
Clamp Diode Current (I
DC Output Current, per pin (I
DC V
or GND Current,
CC
per pin (I
CC
)
IN
)
OUT
)
CD
OUT
)
Storage Temperature Range (T
Power Dissipation (P
MM74HC540 • MM74HC541
(Note 3)600 mW
)
D
S.O. Package only500 mW
Lead Temperature (T
)
L
(Soldering 10 seconds)260
STG
1.5 to V
0.5 to V
)
)
65q
0.5 to 7.0V
CC
CC
r
20 mA
r
35 mA
r
70 mA
C to 150qC
Recommended Operating
Conditions
1.5V
0.5V
DC Input or Output Voltage
, V
(V
IN
OUT
Operating Temperature Range (T
Input Rise or Fall Times
, tf) V
(t
r
CC
V
CC
V
Supply Voltage (V
Note 1: Absolute Maximum Ratings a re those va lues beyon d which d amage to the device may occur.
Note 2: Unless otherwise specifie d all voltages are referenced to ground.
Note 3: Power Dissipation temp erature de rating — plastic “N” package:
12 mW/qC from 65qC to 85qC.
q
C
CC
)26V
CC
)0V
)4085qC
A
2.0V1000ns
4.5V500ns
6.0V400ns
MinMax Units
CC
DC Electrical Characteristics (Note 4)
TA
SymbolParameterConditions
V
Minimum HIGH Level2.0V1.51.51.5V
IH
Input Voltage4.5V3.153.153.15V
V
Maximum LOW Level2.0V0.50.50.5V
IL
Input Voltage 4.5V1.351.351.35V
V
Minimum HIGH LevelV
OH
Output Voltage|I
V
Maximum LOW LevelV
OL
Output Voltage|I
I
Maximum InputV
IN
Current
I
Maximum 3-STATEV
OZ
Output LeakageV
Current
I
Maximum QuiescentV
CC
Supply CurrentI
Note 4: For a power supply of 5V r10% the worst ca se out put voltag es (VOH, and VOL) occur for HC a t 4.5V. Thus the 4.5V values s hould be used w hen
designing with this supply. Worst case V
, ICC, and IOZ) occur for CMOS at the higher voltage and so th e 6.0V values should be used.
rent (I
IN
VIH or V
IN
OUT
V
IN
|I
OUT
|I
OUT
IN
OUT
V
IN
|I
OUT
|I
OUT
IN
IN
OUT
IN
OUT
and VIL occur at V
IH
IL
| d 20 PA2.0V2.01.91.91.9V
VIH or V
IL
| d 6.0 mA4.5V4.23.983.843.7V
| d 7.8 mA6.0V5.75.485.345.2V
VIH or V
IL
| d 20 PA2.0V00.10.10.1V
VIH or V
IL
| d 6.0 mA4.5V0.20.260.330.4V
| d 7.8 mA6.0V0.20.260.330.4V
VCC or GND6.0V
VIH or VIL, G VIH6.0V
VCC or GND
VCC or GND6.0V8.080160
0 PA
CC
V
CC
6.0V4.24.24.2V
6.0V1.81.81.8V
4.5V4.54.44.44.4V
6.0V6.05.95.95.9V
4.5V00.10.10.1V
6.0V00.10.10.1V
5.5V and 4.5V respectively. (The VIH value at 5.5V is 3.85V.) The worst case leakage c ur-
25qCTA
TypGuaranteed Limits
r
0.1
r
0.5
40 to 85qCTA
r
1.0
r
5
55 to 125qC
r
1.0
r
10
V
Units
P
P
P
A
A
A
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AC Electrical Characteristics
V
5V, T
25qC, t
t
CC
A
6 ns
r
f
SymbolParameterConditionsTyp
t
PHL
, t
PLH
Maximum PropagationCL
45 pF1218ns
Delay (540)
t
PHL
, t
PLH
Maximum PropagationCL
45 pF1420ns
Delay (541)
t
t
PZH
PHZ
, t
PZL
, t
PLZ
Maximum Output EnableRL
TimeCL
Maximum Output DisableRL
TimeCL
1 k
45 pF
1 k
5 pF
:
:
AC Electrical Characteristics
V
2.0V to 6.0V, C
CC
SymbolParameterConditions
t
, t
Maximum PropagationCL
PHL
PLH
Delay (540)C
t
, t
Maximum PropagationCL
PHL
PLH
Delay (541)C
t
, t
Maximum Output EnableRL
PZH
PZL
TimeC
, t
t
Maximum Output DisableRL
PHZ
PLZ
TimeCL
t
, t
Maximum Output RiseCL
THL
TLH
and Fall Time4.5V7121518ns
C
Power DissipationG V
PD
Capacitance (Note 5)G V
C
Maximum Input5101010pF
IN
Capacitance
C
Maximum Output Capacitance15202020pF
OUT
Note 5: CPD determines the no load dynamic power consumption, P