
KST63/64
Darlington Transistor
PNP Epitaxial Silicon Transistor
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST63/64
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CES
EBO
C
C
STG
Collector-Base Voltage -30 V
Collector-Emitter Voltage -30 V
Emitter-Base Voltage -10 V
Collector Current -500 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CES
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -0.1mA -1.5 V
V
CE
(on) Base-Emitter On Voltage VCE= -5V, IC= -100mA -2.0 V
V
BE
f
T
* Pulse test: PW≤300µs, Duty Cycle≤2%
Collector-Emitter Breakdown Voltage IC= -100, VBE=0 -30 V
Collector Cut-off Current VCE= -30V, IE=0 -100 nA
Emitter Cut-off Current VEB= -10V, IC=0 -100 nA
* DC Current Gain
: KST63
: KST64
: KST63
: K ST64
Current Gain Bandwidth Product VCE= -5V, IC= -10mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
= -5V, IC= -10mA
CE
= -5V, IC= -100mA
V
CE
f=100MHz
5K
10K
10K
20K
125 MHz
Marking Code
Type KST63 KST64
Mark 2U 2V
Marking
2U
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

Typical Characteristics
KST63/64
1000k
100k
10k
, DC CURRENT GAIN
FE
h
1k
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
100
10
VCE = -5V
VCE = -5V
VBE(sat)
VCE(sat)
IC = 1000 I
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
100
[MHz],
T
f
10
VCE = -5V
[mA], COLLECTOR CURRENT
C
I
1
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
VBE[V], BASE-EMITTER VOLTAGE
CURRENT GAIN BANDWIDTH PRODUCT
1
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

Package Dimensions
0.40
±0.03
KST63/64
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

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As used herein:
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.