Fairchild KST5551 service manual
KST5551
Amplifier Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
NPN Epitaxial Silicon Transistor
=160V
CEO
(max)=350mW
C
3
2
SOT-23
1
Mark: G1
1. Base 2. Emitter 3. Collector
KST5551
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
• Refer to 2N5551 for graphs
Electrical Characteristics
Collector-Base Voltage 180 V
Collector-Emitter Voltage 160 V
Emitter-Base Voltage 6 V
Collector Current 600 mA
Collector Power Dissipation 350 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA
CE
(sat) Base-Emitter Saturation Voltage IC=10mA, IB=1mA
V
BE
f
T
Collector-Base Breakdown Voltage IC=100µA, IE=0 180 V
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 160 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
Collector Cut-off Current VCB=120V, IE=0 50 nA
Emitter Cut-off Current VEB=4V, IC=0 50 nA
DC Current Gain VCE=5V, IC=1mA
V
=5V, IC=10mA
CE
=5V, IC=50mA
V
CE
80
80
30
250
0.15
=50mA, IB=5mA
I
C
0.2
1
I
=50mA, IB=5mA
C
Current Gain Bandwidth Product VCE=10V, IC=10mA,
100 300 MHz
1
f=100MHz
C
ob
NF Noise Figure V
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Output Capacitance VCB=10V, IE=0, f=1MHz 6 pF
=5V, IC=250µA, RS=1KΩ,
CE
f=10Hz to 15.7KMz
8dB
V
V
V
V
©2003 Fairchild Semiconductor Corporation Rev. B2, February 2003
Package Dimensions
0.40
±0.03
KST5551
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
©2003 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B2, February 2003
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