Fairchild KST5550, KST5550 Schematic [ru]
KST5550
High Voltage Transistor
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
KST5550
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage 160 V
Collector-Emitter Voltage 140 V
Emitter-Base Voltage 6 V
Collector Current 600 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA
CE
(sat) Base-Emitter Saturation Voltage IC=10mA, IB=1mA
V
BE
f
T
C
ob
Collector-Base Breakdown Voltage IC=10µA, IE=0 160 V
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 140 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
Collector Cut-off Current VCB=100V, IE=0 100 nA
Emitter Cut-off Current VEB=4V, IC=0 50 nA
DC Current Gain VCE=5V, IC=1.0mA
Current Gain Bandwidth Product IC=10mA, VCE=10V
Output Capacitance VCB=10V, IE=0, f=1.0MHz 6.0 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=5V, IC=10mA
V
CE
=5V, IC=50mA
V
CE
I
=50mA, IB=5mA
C
=50mA, IB=5mA
I
C
f=100MHz
60
60
20
100 300 MHz
250
0.15
0.25
1.0
1.2
V
V
V
V
Marking
1F
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Typical Characteristics
KST5550
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
10
[mA], COLLECTOR CURRENT
C
I
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
VCE = 5V
VCE = 5V
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
VCE(sat)
1 10 100 1000
IC = 10 I
B
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
100
10
1
[pF], CAPACITANCE
ob
C
0.1
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
f = 1MHz
I
= 0
E
Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance
1000
100
10
1
1 10 100 1000
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
VCE = 10V
Figure 5. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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