Fairchild KST4403, KST4403 Schematic [ru]
KST4403
KST4403
Switching Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current -600 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
BEV
I
CEX
h
FE
(sat) * Collector-Emitter Saturation Voltage IC= -150mA, IB= -15mA
V
CE
(sat) * Base-Emitter Saturation Voltage IC= -150mA, IB= -15mA
V
BE
f
T
C
ob
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC= -0.1mA, IE=0 -40 V
* Collector-Emitter Breakdown Voltage IC= -1.0mA, IB=0 -40 V
Emitter-Base Breakdown Voltage IE= -0.1mA, IC=0 -5 V
Base Cut-off Current VCE= -35V, VBE= -0.4V -0.1 µA
Collector Cut-off Current VCE= -35V, VBE= -0.4V -0.1 µA
DC Current Gain VCE= -1V, IC= -0.1mA
Current Gain Bandwidth Product IC= -20mA, VCE= -10V
Output Capacitance VCB= -10V, IE=0
Turn On Time VCC= -30V, VBE= -2V
Turn Off Time VCC= -30V, IC= -150mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
= -1V, IC= -1.0mA
CE
= -1V, IC= -10mA
V
CE
= -2V, IC= -150mA
*V
CE
*V
= -2V, IC= -500mA
CE
= -500mA, IB= -50mA
I
C
= -500mA, IB= -50mA
I
C
f=100MHz
f=140KHz
I
= -150mA, IB1= -15mA
C
= -15mA
I
B1=IB2
Marking
30
60
100
100
300
20
-0.4
-0.75
-0.75 -0.95
-1.3
200 MHz
8.5 pF
35 ns
255 ns
V
V
V
V
2T
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Typical Characteristics
KST4403
1000
VCE = -2V
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
-100
VCE = -10V
-10
[mA], COLLECTOR CURRENT
C
I
-1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VBE[V], BASE-EMITTER VOLTAGE
-10
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
VCE(sat)
-1 -10 -100 -1000
IC = 10 I
B
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
Ob
C
1
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
f = 140KHz
I
= 0
E
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance
1000
VCE = -10V
100
10
1
-1 -10 -100 -1000
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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