KST4403
KST4403
Switching Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current -600 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
BEV
I
CEX
h
FE
(sat) * Collector-Emitter Saturation Voltage IC= -150mA, IB= -15mA
V
CE
(sat) * Base-Emitter Saturation Voltage IC= -150mA, IB= -15mA
V
BE
f
T
C
ob
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC= -0.1mA, IE=0 -40 V
* Collector-Emitter Breakdown Voltage IC= -1.0mA, IB=0 -40 V
Emitter-Base Breakdown Voltage IE= -0.1mA, IC=0 -5 V
Base Cut-off Current VCE= -35V, VBE= -0.4V -0.1 µA
Collector Cut-off Current VCE= -35V, VBE= -0.4V -0.1 µA
DC Current Gain VCE= -1V, IC= -0.1mA
Current Gain Bandwidth Product IC= -20mA, VCE= -10V
Output Capacitance VCB= -10V, IE=0
Turn On Time VCC= -30V, VBE= -2V
Turn Off Time VCC= -30V, IC= -150mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
= -1V, IC= -1.0mA
CE
= -1V, IC= -10mA
V
CE
= -2V, IC= -150mA
*V
CE
*V
= -2V, IC= -500mA
CE
= -500mA, IB= -50mA
I
C
= -500mA, IB= -50mA
I
C
f=100MHz
f=140KHz
I
= -150mA, IB1= -15mA
C
= -15mA
I
B1=IB2
Marking
30
60
100
100
300
20
-0.4
-0.75
-0.75 -0.95
-1.3
200 MHz
8.5 pF
35 ns
255 ns
V
V
V
V
2T
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Typical Characteristics
KST4403
1000
VCE = -2V
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
-100
VCE = -10V
-10
[mA], COLLECTOR CURRENT
C
I
-1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VBE[V], BASE-EMITTER VOLTAGE
-10
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
VCE(sat)
-1 -10 -100 -1000
IC = 10 I
B
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
Ob
C
1
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
f = 140KHz
I
= 0
E
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance
1000
VCE = -10V
100
10
1
-1 -10 -100 -1000
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
Package Dimensions
0.40
±0.03
KST4403
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
CMOS™
E
EnSigna™
FACT™
FACT Quiet series™
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
2
C™
I
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Loading...